Inventor
REMI COQUAND
Inventor
FR
Overview
Patents· 4 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices33%
H10DInorganic electric semiconductor devices33%
B82YSpecific uses or applications of nanostructures25%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h108%
PatentTitleYear
11,575,003Creation of stress in the channel of a nanosheet transistor202311,515,392Semiconductor divice having a carbon containing insulation layer formed under the source/drain202211,450,755Electronic device including at least one nano-object202211,177,371Transistor with superposed bars and double-gate structure2021Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2021–2023Patents assigned to COMMISSARIAT ENERGIE ATOMIQUE (4)· patent assignee history
2021–2023Based in FR· patent location history
2022–2023Patents assigned to IBM (3)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| COMMISSARIAT ENERGIE ATOMIQUE | 4 | 2021–2023 |
| IBM | 3 | 2022–2023 |
Locations
| Location | Patents | Span |
|---|---|---|
| FR | 4 | 2021–2023 |