Inventor
Hokyun Ahn
Inventor
Daejeon, KR
Overview
Patents· 18 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices34%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1023%
H01LSemiconductor devices20%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1011%
G02BOptical elements, systems or apparatus2%
G11CStatic stores2%
H03FAmplifiers2%
H03KPulse technique2%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation2%
PatentTitleYear
10,608,102Semiconductor device having a drain electrode contacting an epi material inside a through-hole and method of manufacturing the same202010,256,811Cascode switch circuit including level shifter20199,634,112'Field effect transistor and method of fabricating the same'20179,490,214'Semiconductor device and method of fabricating the same'20169,159,612'Semiconductor device and method of fabricating the same'20159,136,396'Semiconductor device and method of manufacturing the same'20158,952,422'Transistor and method of fabricating the same'20158,941,231'Electronic chip and method of fabricating the same'20158,901,608'Transistor and method of fabricating the same'20148,609,474'Method of manufacturing semiconductor device'20138,586,462'Method of manufacturing a field-effect transistor'20138,518,794'Semiconductor devices and methods of forming thereof'20138,338,241'Method of manufacturing high frequency device structure'20128,294,521'Power amplifier having depletion mode high electron mobility transistor'20128,058,658'High-speed optical interconnection device'20118,053,345'Method for fabricating field effect transistor using a compound semiconductor'20116,979,871'Semiconductor device having T-shaped gate electrode and method of manufacturing the same'20056,933,543'Compound semiconductor high frequency switch device'2005Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2005–2015Patents assigned to KOREA ELECTRONICS TELECOMM (14)· patent assignee history
2005–2020Based in Daejeon, KR· patent location history
2011–2013Patents assigned to AHN HOKYUN (6)· patent assignee history
2011–2013Patents assigned to KIM HAE CHEON (6)· patent assignee history
2011–2013Patents assigned to LIM JONG-WON (5)· patent assignee history
2016–2020Patents assigned to ELECTRONICS & TELECOMMUNICATIONS RES INST (4)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| KOREA ELECTRONICS TELECOMM | 14 | 2005–2015 |
| AHN HOKYUNself | 6 | 2011–2013 |
| KIM HAE CHEON | 6 | 2011–2013 |
| LIM JONG-WON | 5 | 2011–2013 |
| ELECTRONICS & TELECOMMUNICATIONS RES INST | 4 | 2016–2020 |
Locations
| Location | Patents | Span |
|---|---|---|
| Daejeon, KR | 18 | 2005–2020 |