Inventor
Junro Sakai
Inventor
Tokyo, JP
Overview
Patents· 10 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
C23Cprimary
C23CCoating metallic material43%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1019%
C30BSingle-crystal growth14%
H01JElectric discharge tubes or discharge lamps10%
B03CMagnetic or electrostatic separation of solid materials from solid materials or fluids5%
C23FNon-mechanical removal of metallic material from surface5%
H01FMagnets5%
PatentTitleYear
6,616,816'Substrate processing device and method'20036,610,180'Substrate processing device and method'20036,486,076'Thin film deposition apparatus'20026,197,118'Thin film deposition apparatus'20015,897,923'Plasma treatment device'19995,441,012'Thin film deposition method for wafer'19955,284,521'Vacuum film forming apparatus'19945,234,862'Thin film deposition method'19934,987,857'Vacuum deposition apparatus with dust collector electrode'19914,599,069'Substrate holder for molecular beam epitaxy apparatus'1986Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1986–2003Patents assigned to ANELVA CORP (10)· patent assignee history
1986–2003Based in Tokyo, JP· patent location history
1991–1995Based in Fuchu, JP· patent location history
1993–1995Patents assigned to NEC CORP (3)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| ANELVA CORP | 10 | 1986–2003 |
| NEC CORP | 3 | 1993–1995 |
Locations
| Location | Patents | Span |
|---|---|---|
| Tokyo, JP | 6 | 1986–2003 |
| Fuchu, JP | 4 | 1991–1995 |