Inventor
Chun-Yao Ko
Inventor
Hsinchu, TW
Overview
Patents· 28 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices21%
H10BElectronic memory devices17%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1017%
H10DInorganic electric semiconductor devices16%
G11CStatic stores8%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation8%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h106%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution5%
G06FElectric digital data processing1%
PatentTitleYear
10,784,276Non-volatile memory and method of manufacturing same202010,727,222Memory system and memory cell having dense layouts202010,553,597Memory cell including a plurality of wells202010,163,920Memory device and memory cell201810,141,323Non-volatile memory and method of manufacturing the same20189,837,458Crosstalk improvement through P on N structure for image sensor20179,711,516'Non-volatile memory having a gate-layered triple well structure'20179,620,594'Memory device, memory cell and memory cell layout'20179,537,016'Memory device, gate stack and method for manufacturing the same'20179,496,302'Crosstalk improvement through P on N structure for image sensor'20169,384,815'Mechanisms for preventing leakage currents in memory cells'20169,373,627'Multiple-time programming memory cells and methods for forming the same'20169,257,522'Memory architectures having dense layouts'20169,159,741'Structure and method for single gate non-volatile memory device having a capacitor well doping design with improved coupling efficiency'20158,962,439'Memory cell'20158,952,442'Multiple-time programming memory cells and methods for forming the same'20158,890,225'Structure and method for single gate non-volatile memory device having a capacitor well doping design with improved coupling efficiency'20148,853,079'Fuse device'20148,848,428'Memory architectures having dense layouts'20148,772,854'Multiple-time programming memory cells and methods for forming the same'20148,669,133'Crosstalk improvement through P on N structure for image sensor'20148,653,623'One-time programmable devices and methods of forming the same'20148,368,130'Method and device to reduce dark current in image sensors'20138,133,792'Method for reducing capacitance variation between capacitors'20128,114,752'Structure of capacitor set'20127,879,639'Method and device to reduce dark current in image sensors'20117,732,844'Crosstalk improvement through P on N structure for image sensor'20107,388,187'Cross-talk reduction through deep pixel well implant for image sensors'2008Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2008–2016Patents assigned to TAIWAN SEMICONDUCTOR MFG (14)· patent assignee history
2008–2014Based in Bade City, TW· patent location history
2012–2014Patents assigned to KO CHUN-YAO (8)· patent assignee history
2012Based in Taoyuan County, TW· patent location history
2013–2014Patents assigned to CHANG CHUNG-WEI (2)· patent assignee history
2014Patents assigned to CHEN SHIH-HSIEN (2)· patent assignee history
2014–2020Based in Hsinchu, TW· patent location history
2016–2020Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (12)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TAIWAN SEMICONDUCTOR MFG | 14 | 2008–2016 |
| TAIWAN SEMICONDUCTOR MFG CO LTD | 12 | 2016–2020 |
| KO CHUN-YAOself | 8 | 2012–2014 |
| CHANG CHUNG-WEI | 2 | 2013–2014 |
| CHEN SHIH-HSIEN | 2 | 2014 |
Locations
| Location | Patents | Span |
|---|---|---|
| Hsinchu, TW | 21 | 2014–2020 |
| Bade City, TW | 5 | 2008–2014 |
| Taoyuan County, TW | 2 | 2012 |