Inventor
Tamotsu Owada
Inventor
Kawasaki, JP
Overview
Patents· 27 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Wprimary
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1037%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1025%
H10DInorganic electric semiconductor devices7%
C23CCoating metallic material6%
H01LSemiconductor devices6%
C09DCoating compositions, e.g. paints, varnishes or lacquers4%
Y10TTechnical subjects covered by former us classification4%
B23KSoldering or unsoldering3%
H05KPrinted circuits3%
B01DSeparation1%
PatentTitleYear
9,236,302'Semiconductor device and manufacturing method of semiconductor device'20169,123,728'Semiconductor device and method for manufacturing semiconductor device'20159,087,873'Semiconductor device manufacturing method'20158,916,423'Semiconductor device and method of manufacturing the same'20148,883,613'Manufacturing method of semiconductor device, processing method of semiconductor wafer, semiconductor wafer'20148,778,814'Silicon oxycarbide, growth method of silicon oxycarbide layer, semiconductor device and manufacture method for semiconductor device'20148,669,177'Semiconductor device and method for manufacturing semiconductor device'20148,604,552'Semiconductor device and method for fabricating semiconductor device'20138,349,722'Silicon oxycarbide, growth method of silicon oxycarbide layer, semiconductor device and manufacture method for semiconductor device'20138,105,935'Method of manufacturing a semiconductor device'20128,026,164'Semiconductor device and method of manufacturing the same'20117,928,476'Semiconductor device and method of manufacturing the same'20117,763,509'Method of manufacturing semiconductor device including forming two stress films and irradiation of one stress film'20107,749,897'Method of manufacturing semiconductor device'20107,642,185'Insulating film forming method capable of enhancing adhesion of silicon carbide film, etc. and semiconductor device'20107,579,277'Semiconductor device and method for fabricating the same'20097,541,296'Method for forming insulating film, method for forming multilayer structure and method for manufacturing semiconductor device'20097,485,570'Silicon oxycarbide, growth method of silicon oxycarbide layer, semiconductor device and manufacture method for semiconductor device'20097,256,118'Semiconductor device using low-K material as interlayer insulating film and its manufacture method'20077,235,866'Low dielectric constant film material, film and semiconductor device using such material'20077,208,405'Insulating film forming method capable of enhancing adhesion of silicon carbide film, etc. and semiconductor device'20076,958,525'Low dielectric constant film material, film and semiconductor device using such material'20056,949,830'Silicon oxycarbide, growth method of silicon oxycarbide layer, semiconductor device and manufacture method for semiconductor device'20056,943,431'Semiconductor device using low-k material as interlayer insulating film and including a surface modifying layer'20056,613,834'Low dielectric constant film material, film and semiconductor device using such material'20035,386,430'Excimer laser processing method and apparatus'19955,349,155'Insulating material for wiring substrate and method of producing multi-layered wiring substrate'1994Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1994–2009Patents assigned to FUJITSU LTD (10)· patent assignee history
1994–2014Based in Kawasaki, JP· patent location history
2009–2010Patents assigned to FUJITSU MICROELECTRONICS LTD (3)· patent assignee history
2010–2016Patents assigned to FUJITSU SEMICONDUCTOR LTD (14)· patent assignee history
2011Based in Tokyo, JP· patent location history
2012–2014Patents assigned to OWADA TAMOTSU (4)· patent assignee history
2012–2014Patents assigned to WATATANI HIROFUMI (4)· patent assignee history
2014–2016Based in Yokohama, JP· patent location history
2014Based in Shinjuku-ku, JP· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| FUJITSU SEMICONDUCTOR LTD | 14 | 2010–2016 |
| FUJITSU LTD | 10 | 1994–2009 |
| OWADA TAMOTSUself | 4 | 2012–2014 |
| WATATANI HIROFUMI | 4 | 2012–2014 |
| FUJITSU MICROELECTRONICS LTD | 3 | 2009–2010 |
Locations
| Location | Patents | Span |
|---|---|---|
| Kawasaki, JP | 20 | 1994–2014 |
| Yokohama, JP | 5 | 2014–2016 |
| Shinjuku-ku, JP | 1 | 2014 |
| Tokyo, JP | 1 | 2011 |