Inventor

Tak H. Ning

Inventor

Yorktown Heights, NY, US

Overview

1978–2021

Patent span

Electricity

Primary field (CPC H)

Patents· 252 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary

H10DInorganic electric semiconductor devices31%

H01LSemiconductor devices23%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1012%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h109%

H10BElectronic memory devices6%

G11CStatic stores3%

G01NInvestigating or analysing materials by determining their chemical or physical properties2%

H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation2%

H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light1%

G01TMeasurement of nuclear or x-radiation1%

PatentTitleYear

11,018,188Three-dimensional stackable multi-layer cross-point memory with bipolar junction transistor selectors2021 10,998,419Single crystalline extrinsic bases for bipolar junction structures2021 10,998,420Direct growth of lateral III-V bipolar transistor on silicon substrate2021 10,998,444Stacked FinFET masked-programmable ROM2021 10,964,709Stacked FinFET EEPROM2021 10,957,797Series connected stacked vertical transistors for high voltage applications2021 10,916,651Body contact in fin field effect transistor design2021 10,916,629Nanosheet-CMOS EPROM device with epitaxial oxide charge storage region2021 10,903,275Three-dimensional stackable multi-layer cross-point memory with single-crystalline bipolar junction transistor selectors2021 10,896,971Vertical transistor with body contact fabrication2021 10,896,912Stacked vertical transistor erasable programmable read-only memory and programmable inverter devices2021 10,896,979Compact vertical injection punch through floating gate analog memory and a manufacture thereof2021 10,892,346Bipolar junction transistor (BJT) for liquid flow biosensing applications without a reference electrode and large sensing area2021 10,839,909Parallel-connected merged-floating-gate nFET-pFET EEPROM cell and array2020 10,833,181Single column compound semiconductor bipolar junction transistor with all-around base2020 10,825,921Lateral bipolar junction transistor with controlled junction2020 10,784,347High-performance lateral BJT with epitaxial lightly doped intrinsic base2020 10,756,097Stacked vertical transistor-based mask-programmable ROM2020 10,727,299Lateral bipolar junction transistor with abrupt junction and compound buried oxide2020 10,707,336High-performance lateral BJT with epitaxial lightly doped intrinsic base2020 10,658,353Stacked electrostatic discharge diode structures2020 10,636,804Stacked FinFET programmable inverter (EPROM)2020 10,629,730Body contact in Fin field effect transistor design2020 10,615,271III-V lateral bipolar junction transistor on local facetted buried oxide layer2020 10,580,901Stacked series connected VFETs for high voltage applications2020 10,566,447Single column compound semiconductor bipolar junction transistor with all-around base2020 10,504,991Biosensor based on heterojunction bipolar transistor2019 10,483,368Single crystalline extrinsic bases for bipolar junction structures2019 10,468,503Stacked vertical transport field effect transistor electrically erasable programmable read only memory (EEPROM) devices2019 10,424,650Single column compound semiconductor bipolar junction transistor fabricated on III-V compound semiconductor surface2019 10,411,109Bipolar junction transistor (BJT) for liquid flow biosensing applications without a reference electrode and large sensing area2019 10,396,154Lateral bipolar junction transistor with abrupt junction and compound buried oxide2019 10,388,648Vertical field effect transistor (VFET) programmable complementary metal oxide semiconductor inverter2019 10,389,090Lateral growth of edge-emitting lasers2019 10,345,317Biosensors including surface resonance spectroscopy and semiconductor devices2019 10,332,972Single column compound semiconductor bipolar junction transistor fabricated on III-V compound semiconductor surface2019 10,319,442Parallel-connected merged-floating-gate nFET-pFET EEPROM cell and array2019 10,304,844Stacked FinFET EEPROM2019 10,304,823Vertical field effect transistor (VFET) programmable complementary metal oxide semiconductor inverter2019 10,283,516Stacked nanosheet field effect transistor floating-gate EEPROM cell and array2019 10,256,302Vertical transistor with air-gap spacer2019 10,243,065Method of manufacturing SOI lateral Si-emitter SiGe base HBT2019 10,236,366Semiconductor-on-insulator lateral heterojunction bipolar transistor having epitaxially grown intrinsic base and deposited extrinsic base2019 10,230,005Four terminal stacked complementary junction field effect transistors2019 10,229,979High voltage laterally diffused MOSFET with buried field shield and method to fabricate same2019 10,192,864Lateral BiCMOS replacement metal gate2019 10,170,463Bipolar transistor compatible with vertical FET fabrication2019 10,170,568High voltage laterally diffused MOSFET with buried field shield and method to fabricate same2019 10,170,186High-density EEPROM arrays utilizing stacked field effect transistors2019 10,170,575Vertical transistors with buried metal silicide bottom contact2019 10,170,567High voltage laterally diffused MOSFET with buried field shield and method to fabricate same2019 10,141,405Lateral bipolar junction transistor with abrupt junction and compound buried oxide2018 10,134,917Tight pitch vertical transistor EEPROM2018 10,134,882Method of junction control for lateral bipolar junction transistor2018 10,115,750Sensors including complementary lateral bipolar junction transistors2018 10,090,340Optoelectronic devices with back contact2018 10,090,290Stacked electrostatic discharge diode structures2018 10,083,875Vertical transistors having different gate lengths2018 10,079,278Bipolar transistor with carbon alloyed contacts2018 10,074,734Germanium lateral bipolar transistor with silicon passivation2018 10,049,742Parallel-connected merged-floating-gate nFET-pFET EEPROM cell and array2018 10,043,825Lateral bipolar junction transistor with multiple base lengths2018 10,038,061High voltage laterally diffused MOSFET with buried field shield and method to fabricate same2018 10,026,752Stacked SOI lateral bipolar transistor RF power amplifier and driver2018 10,026,733Complementary SOI lateral bipolar transistors with backplate bias2018 10,008,281One time programmable read-only memory (ROM) in SOI CMOS2018 9,966,735III-V lasers with integrated silicon photonic circuits2018 9,947,677High-density EEPROM arrays having parallel-connected common-floating-gate NFET and PFET as memory cell2018 9,947,675Mask-programmable ROM using a vertical FET integration process2018 9,947,778Lateral bipolar junction transistor with controlled junction2018 9,935,236Monolithic nano-cavity light source on lattice mismatched semiconductor substrate2018 9,935,186Method of manufacturing SOI lateral Si-emitter SiGe base HBT2018 9,929,145'Bipolar transistor compatible with vertical FET fabrication'2018 9,929,161'Complementary bipolar SRAM'2018 9,929,258'Method of junction control for lateral bipolar junction transistor'2018 9,905,667'Lateral bipolar transistor'2018 9,893,207'Programmable read only memory (ROM) integrated in tight pitch vertical transistor structures'2018 9,887,278'Semiconductor-on-insulator lateral heterojunction bipolar transistor having epitaxially grown intrinsic base and deposited extrinsic base'2018 9,865,714'III-V lateral bipolar junction transistor'2018 9,859,172'Bipolar transistor compatible with vertical FET fabrication'2018 9,852,938Passivated germanium-on-insulator lateral bipolar transistors2017 9,812,508'Hybrid bipolar junction transistor'2017 9,806,151'Biosensor based on heterojunction bipolar transistor'2017 9,799,777'Floating gate memory in a channel last vertical FET flow'2017 9,799,756'Germanium lateral bipolar transistor with silicon passivation'2017 9,780,100'Vertical floating gate memory with variable channel doping profile'2017 9,773,894'Application of super lattice films on insulator to lateral bipolar transistors'2017 9,761,608'Lateral bipolar junction transistor with multiple base lengths'2017 9,748,239'Fin-double-gated junction field effect transistor'2017 9,742,147'Monolithic integrated photonics with lateral bipolar and BiCMOS'2017 9,726,631'Ultra-sensitive biosensor based on lateral bipolar junction transistor having self-aligned epitaxially grown base'2017 9,728,671'Monolithic nano-cavity light source on lattice mismatched semiconductor substrate'2017 9,714,952'Biosensors including surface resonance spectroscopy and semiconductor devices'2017 9,704,569'One time programmable read-only memory (ROM) in SOI CMOS'2017 9,698,245'Vertical transistor with air-gap spacer'2017 9,691,850'Vertical transistor with air-gap spacer'2017 9,691,886'Semiconductor-on-insulator (SOI) lateral heterojunction bipolar transistor having an epitaxially grown base'2017 9,673,307'Lateral bipolar junction transistor with abrupt junction and compound buried oxide'2017 9,666,267'Structure and method for adjusting threshold voltage of the array of transistors'2017 9,659,655'Memory arrays using common floating gate series devices'2017 9,659,979'Sensors including complementary lateral bipolar junction transistors'2017 9,653,567'Lateral bipolar transistor'2017 9,653,149'Complementary bipolar SRAM'2017 9,653,465'Vertical transistors having different gate lengths'2017 9,647,099'Semiconductor-on-insulator (SOI) lateral heterojunction bipolar transistor having an epitaxially grown base'2017 9,646,125'Method for conversion of commercial microprocessor to radiation-hardened processor and resulting processor'2017 9,625,409'Ultra-sensitive biosensor based on lateral bipolar junction transistor having self-aligned epitaxially grown base'2017 9,614,148'Magnetic-field and magnetic-field gradient sensors based on lateral SOI bipolar transistors'2017 9,602,105'Performance-on-demand IC chip design in integrated-injection logic'2017 9,577,065'Back-end transistors with highly doped low-temperature contacts'2017 9,564,429'Lateral bipolar sensor with sensing signal amplification'2017 9,546,977'Junction field effect transistor based biosensor'2017 9,548,421'Optoelectronic devices with back contact'2017 9,536,789'Fin-double-gated junction field effect transistor'2017 9,536,788'Complementary SOI lateral bipolar transistors with backplate bias'2017 9,515,198'Magnetic-field and magnetic-field gradient sensors based on lateral SOI bipolar transistors'2016 9,508,777'Hybrid bipolar junction transistor'2016 9,502,504'SOI lateral bipolar transistors having surrounding extrinsic base portions'2016 9,490,352'Bipolar transistor with carbon alloyed contacts'2016 9,484,430'Back-end transistors with highly doped low-temperature contacts'2016 9,484,464'Structure and method for adjusting threshold voltage of the array of transistors'2016 9,478,534'Lateral BiCMOS replacement metal gate'2016 9,472,556'SOI lateral bipolar for integrated-injection logic SRAM'2016 9,472,607'Active matrix using hybrid integrated circuit and bipolar transistor'2016 9,450,381'Monolithic integrated photonics with lateral bipolar and BiCMOS'2016 9,437,718'Semiconductor-on-insulator (SOI) lateral heterojunction bipolar transistor having a wide band gap emitter/collector which are epitaxially grown'2016 9,425,260'Application of super lattice films on insulator to lateral bipolar transistors'2016 9,425,080'Non-volatile memory device employing semiconductor nanoparticles'2016 9,425,298'Lateral bipolar transistor'2016 9,417,208'Dual FET sensor for sensing biomolecules and charged ions in an electrolyte'2016 9,407,066'III-V lasers with integrated silicon photonic circuits'2016 9,391,180'Heterojunction bipolar transistors with intrinsic interlayers'2016 9,379,028'SOI CMOS structure having programmable floating backplate'2016 9,377,543'Charge sensors using inverted lateral bipolar junction transistors'2016 9,368,572'Vertical transistor with air-gap spacer'2016 9,356,114'Lateral heterojunction bipolar transistor with low temperature recessed contacts'2016 9,336,860'Complementary bipolar SRAM'2016 9,331,097'High speed bipolar junction transistor for high voltage applications'2016 9,318,585'Semiconductor-on-insulator (SOI) lateral heterojunction bipolar transistor having a wide band gap emitter/collector which are epitaxially grown'2016 9,305,964'Optoelectronic devices with back contact'2016 9,306,042'Bipolar transistor with carbon alloyed contacts'2016 9,293,454'Bipolar junction transistor having multi-sided base contact'2016 9,263,336'Symmetrical bipolar junction transistor array'2016 9,263,583'Integrated finFET-BJT replacement metal gate'2016 9,240,497'Junction field effect transistor with an epitaxially grown gate structure'2016 9,236,251'Heterogeneous integration of group III nitride on silicon for advanced integrated circuits'2016 9,209,024'Back-end transistors with highly doped low-temperature contacts'2015 9,171,924'SOI bipolar junction transistor with substrate bias voltages'2015 9,170,338'Charge sensors using inverted lateral bipolar junction transistors'2015 9,147,715'Hybrid bipolar junction transistor'2015 9,105,770'Shallow junction photovoltaic devices'2015 9,105,769'Shallow junction photovoltaic devices'2015 9,068,935'Dual FET sensor for sensing biomolecules and charged ions in an electrolyte'2015 9,064,924'Heterojunction bipolar transistors with intrinsic interlayers'2015 9,059,016'Lateral heterojunction bipolar transistors'2015 9,059,123'Active matrix using hybrid integrated circuit and bipolar transistor'2015 9,059,195'Lateral bipolar transistors having partially-depleted intrinsic base'2015 9,059,232'T-shaped compound semiconductor lateral bipolar transistor on semiconductor-on-insulator'2015 9,059,321'Buried channel field-effect transistors'2015 9,059,231'T-shaped compound semiconductor lateral bipolar transistor on semiconductor-on-insulator'2015 9,059,212'Back-end transistors with highly doped low-temperature contacts'2015 9,053,930'Heterogeneous integration of group III nitride on silicon for advanced integrated circuits'2015 9,048,280'Vertical polysilicon-germanium heterojunction bipolar transistor'2015 9,040,929'Charge sensors using inverted lateral bipolar junction transistors'2015 9,029,132'Sensor for biomolecules'2015 8,994,006'Non-volatile memory device employing semiconductor nanoparticles'2015 8,980,737'Methods of forming contact regions using sacrificial layers'2015 8,980,667'Charge sensors using inverted lateral bipolar junction transistors'2015 8,962,436'Lateral bipolar transistors having partially-depleted intrinsic base'2015 8,946,040'SOI lateral bipolar transistor having multi-sided base contact and methods for making same'2015 8,940,548'Sensor for biomolecules'2015 8,927,380'SOI bipolar junction transistor with substrate bias voltages'2015 8,928,096'Buried-channel field-effect transistors'2015 8,912,030'Method for radiation monitoring'2014 8,906,755'Active matrix using hybrid integrated circuit and bipolar transistor'2014 8,895,995'Lateral silicon-on-insulator bipolar junction transistor radiation dosimeter'2014 8,890,256'Structure for heavy ion tolerant device, method of manufacturing the same and structure thereof'2014 8,889,529'Heterojunction bipolar transistors with thin epitaxial contacts'2014 8,859,302'Structure and method for adjusting threshold voltage of the array of transistors'2014 8,847,348'Complementary bipolar inverter'2014 8,803,233'Junctionless transistor'2014 8,705,280'Electrically programmable floating common gate CMOS device and applications thereof'2014 8,664,721'FET with FUSI gate and reduced source/drain contact resistance'2014 8,647,936'Junction field effect transistor with an epitaxially grown gate structure'2014 8,642,407'Devices having reduced susceptibility to soft-error effects and method for fabrication'2014 8,586,441'Germanium lateral bipolar junction transistor'2013 8,558,210'Polysilicon emitter BJT access device for PCRAM'2013 8,557,693'Contact resistivity reduction in transistor devices by deep level impurity formation'2013 8,558,282'Germanium lateral bipolar junction transistor'2013 8,557,670'SOI lateral bipolar junction transistor having a wide band gap emitter contact'2013 8,531,001'Complementary bipolar inverter'2013 8,526,220'Complementary SOI lateral bipolar for SRAM in a low-voltage CMOS platform'2013 8,502,347'Bipolar junction transistor with epitaxial contacts'2013 8,492,794'Vertical polysilicon-germanium heterojunction bipolar transistor'2013 8,486,797'Bipolar junction transistor with epitaxial contacts'2013 8,441,084'Horizontal polysilicon-germanium heterojunction bipolar transistor'2013 8,435,845'Junction field effect transistor with an epitaxially grown gate structure'2013 8,420,493'SOI SiGe-base lateral bipolar junction transistor'2013 8,415,744'SOI CMOS circuits with substrate bias'2013 8,354,858'Apparatus and method for hardening latches in SOI CMOS devices'2013 8,329,564'Method for fabricating super-steep retrograde well MOSFET on SOI or bulk silicon substrate, and device fabricated in accordance with the method'2012 8,314,463'Method for fabricating super-steep retrograde well MOSFET on SOI or bulk silicon substrate, and device fabricated in accordance with the method'2012 8,288,758'SOI SiGe-base lateral bipolar junction transistor'2012 8,278,200'Metal-semiconductor intermixed regions'2012 8,217,380'Polysilicon emitter BJT access device for PCRAM'2012 8,120,095'High-density, trench-based non-volatile random access SONOS memory SOC applications'2012 8,106,458'SOI CMOS circuits with substrate bias'2012 8,063,424'Embedded photodetector apparatus in a 3D CMOS chip stack'2011 7,888,959'Apparatus and method for hardening latches in SOI CMOS devices'2011 7,867,866'SOI FET with source-side body doping'2011 7,816,728'Structure and method of fabricating high-density trench-based non-volatile random access SONOS memory cells for SOC applications'2010 7,807,526'Method of fabricating high-density, trench-based non-volatile random access SONOS memory cells for SOC applications'2010 7,808,039'SOI transistor with merged lateral bipolar transistor'2010 7,700,993'CMOS EPROM and EEPROM devices and programmable CMOS inverters'2010 7,655,983'SOI FET with source-side body doping'2010 7,479,418'Methods of applying substrate bias to SOI CMOS circuits'2009 7,323,382'Intralevel decoupling capacitor, method of manufacture and testing circuit of the same'2008 7,244,976'EEPROM device with substrate hot-electron injector for low-power programming'2007 7,195,971'Method of manufacturing an intralevel decoupling capacitor'2007 7,170,112'Graded-base-bandgap bipolar transistor having a constantâ€”bandgap in the base'2007 7,067,371'Silicon-on-insulator (SOI) integrated circuit (IC) chip with the silicon layers consisting of regions of different thickness'2006 6,949,764'Fully-depleted-collector silicon-on-insulator (SOI) bipolar transistor useful alone or in SOI BiCMOS'2005 6,882,015'Intralevel decoupling capacitor, method of manufacture and testing circuit of the same'2005 6,870,213'EEPROM device with substrate hot-electron injector for low-power'2005 6,849,871'Fully-depleted-collector silicon-on-insulator (SOI) bipolar transistor useful alone or in SOI BiCMOS'2005 6,835,983'Silicon-on-insulator (SOI) integrated circuit (IC) chip with the silicon layers consisting of regions of different thickness'2004 6,812,533'SOI based bipolar transistor having a majority carrier accumulation layer as subcollector'2004 6,777,809'BEOL decoupling capacitor'2004 6,677,637'Intralevel decoupling capacitor, method of manufacture and testing circuit of the same'2004 6,525,427'BEOL decoupling capacitor'2003 6,437,422'Active devices using threads'2002 5,960,265'Method of making EEPROM having coplanar on-insulator FET and control gate'1999 5,886,376'EEPROM having coplanar on-insulator FET and control gate'1999 5,723,370'FET and/or bipolar devices formed in thin vertical silicon on insulator (SOI) structures'1998 5,581,101'FET and/or bipolar devices formed in thin vertical silicon on insulator (SOI) structures'1996 5,506,457'Electronic switch for decoupling capacitor'1996 5,319,239'Polysilicon-collector-on-insulator polysilicon-emitter bipolar'1994 5,256,896'Polysilicon-collector-on-insulator polysilicon-emitter bipolar transistor'1993 5,231,299'Structure and fabrication method for EEPROM memory cell with selective channel implants'1993 5,017,990'Raised base bipolar transistor structure and its method of fabrication'1991 4,785,341'Interconnection of opposite conductivity type semiconductor regions'1988 4,688,063'Dynamic ram cell with MOS trench capacitor in CMOS'1987 4,495,512'Self-aligned bipolar transistor with inverted polycide base contact'1985 4,492,008'Methods for making high performance lateral bipolar transistors'1985 4,483,726'Double self-aligned fabrication process for making a bipolar transistor structure having a small polysilicon-to-extrinsic base contact area'1984 4,446,476'Integrated circuit having a sublayer electrical contact and fabrication thereof'1984 4,338,622'Self-aligned semiconductor circuits and process therefor'1982 4,288,256'Method of making FET containing stacked gates'1981 4,282,540'FET Containing stacked gates'1981 4,173,818'Method for fabricating transistor structures having very short effective channels'1979 4,157,269'Utilizing polysilicon diffusion sources and special masking techniques'1979 4,116,721'Gate charge neutralization for insulated gate field-effect transistors'1978

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1978–2021Patents assigned to IBM (236)· patent assignee history

1978–2021Based in Yorktown Heights, NY, US· patent location history

2011–2016Patents assigned to NING TAK H (37)· patent assignee history

2012–2016Patents assigned to CAI JIN (18)· patent assignee history

2012–2013Patents assigned to CHAN KEVIN K (7)· patent assignee history

2015–2019Patents assigned to GLOBALFOUNDRIES INC (19)· patent assignee history

2017Based in Yortown Heights, NY, US· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
IBM	236	1978–2021
NING TAK Hself	37	2011–2016
GLOBALFOUNDRIES INC	19	2015–2019
CAI JIN	18	2012–2016
CHAN KEVIN K	7	2012–2013

Locations

Location	Patents	Span
Yorktown Heights, New York, US	251	1978–2021
Yortown Heights, New York, US	1	2017