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Inventor

Kai-Hsuan Lee

Inventor
Hsinchu, TW

Overview

3→
Patents
2021
Patent span
Electricity
Primary field (CPC H)

Patents· 3 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H01Lprimary
H01LSemiconductor devices33%
H10DInorganic electric semiconductor devices33%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1022%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1011%
PatentTitleYear
11,133,229Forming transistor by selectively growing gate spacer202111,081,395Fin field effect transistor having air gap and method for manufacturing the same202111,062,957FinFET device with wrapped-around epitaxial structure and manufacturing method thereof2021

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2021Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (3)· patent assignee history
2021Based in Hsinchu, TW· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
TAIWAN SEMICONDUCTOR MFG CO LTD32021
Locations
LocationPatentsSpan
Hsinchu, TW32021