LexDanaLexDanabeta
Inventor

Kazuhide Abe

Inventor
Kawasaki, JP

Overview

83→
Patents
1990–2019
Patent span
Electricity
Primary field (CPC H)

Patents· 83 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices14%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1014%
H10BElectronic memory devices10%
H03HImpedance networks, e.g. resonant circuits7%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h106%
H01HElectric switches5%
H10NElectric solid-state devices not otherwise provided for5%
G11CStatic stores4%
H01GCapacitors4%
H01LSemiconductor devices4%
PatentTitleYear
10,256,184Semiconductor device and manufacturing method thereof201910,252,528Inkjet recording head20199,495,494'Circuit simulating method, circuit simulating apparatus, and method of manufacturing semiconductor device'20169,415,597'Ink jet head having nozzle plate equipped with piezoelectric elements'20169,412,825'Semiconductor device'20169,358,785'Inkjet head having high mechanical strength and method of manufacturing the same'20169,299,627'Semiconductor package having a cap unit with concave portion and method of manufacturing the same'20169,153,680'Stimulated phonon emission device and oscillator, frequency filter, cooling device, light-receiving device, and light-emitting device comprising the stimulated phonon emission device'20159,117,931'Semiconductor device with a resonator using acoustic standing wave excited in semiconductor crystal'20159,041,182'Semiconductor package and method of manufacturing the same'20158,859,426'Semiconductor device and manufacturing method thereof'20148,648,431'Acoustic semiconductor device'20148,513,715'Semiconductor device'20138,419,497'Light emitting device and method of manufacturing the same'20138,324,707'Power amplifier'20128,305,147'Power amplifier'20128,039,873'Semiconductor device'20118,038,890'Piezoelectric-driven MEMS device and method for manufacturing the same'20117,888,762'Infrared detector and fabricating method of infrared detector'20117,851,833'Semiconductor device'20107,839,087'Light emitting device and method of manufacturing the same'20107,812,452'Semiconductor device having barrier layer comprised of dissimilar materials, and method for fabricating the same'20107,796,710'Digital signal demodulator and wireless receiver using the same'20107,770,274'Piezoelectric thin film device and method for manufacturing the same'20107,769,352'Receiver and wireless communication apparatus'20107,718,515'Method for fabricating semiconductor device'20107,675,222'Thin film piezoelectric actuator'20107,646,050'Ferroelectric type semiconductor device having a barrier TiO and TiON type dielectric film'20107,619,470'Power amplifier'20097,579,640'Hybrid memory device'20097,567,018'Micro-mechanical device, micro-switch, variable capacitor high frequency circuit and optical switch'20097,508,268'Power amplifier and transmission and reception system'20097,490,390'Method of manufacturing a voltage controlled oscillator'20097,471,031'Piezoelectric MEMS element and tunable filter equipped with the piezoelectric MEMS element'20087,465,981'Semiconductor device and a method of manufacturing the same'20087,463,117'Film bulk acoustic-wave resonator (FBAR), filter implemented by FBARs and method for manufacturing FBAR'20087,459,827'Piezoelectric-driven MEMS device and method for manufacturing the same'20087,459,833'Thin film piezoelectric actuator'20087,420,320'Piezoelectric thin film device and method for manufacturing the same'20087,414,314'Semiconductor device and manufacturing method thereof'20087,408,213'Ferroelectric memory device and method of manufacture of same'20087,323,805'Piezoelectric thin film device and method for manufacturing the same'20087,221,920'Voltage controlled oscillator, frequency synthesizer and communication apparatus'20077,215,066'Piezoelectric actuator and micro-electromechanical device'20077,211,933'Voltage controlled oscillator'20077,211,505'Production method for wiring structure of semiconductor device'20077,192,858'Method of forming plug'20077,144,812'Method of forming copper wire'20067,135,940'Tunable filter and portable telephone'20066,969,911'Wiring structure of semiconductor device and production method of the device'20056,967,157'Method of forming buried wiring in semiconductor device'20056,924,176'Method of manufacturing semiconductor device'20056,903,008'Method for forming an interconnection in a semiconductor element'20056,903,020'Method of forming buried wiring in semiconductor device'20056,870,446'High frequency filter'20056,809,604'Voltage control oscillator having a ferroelectric thin film perovskite single crystal resonator'20046,797,957'Infrared detection element and infrared detector'20046,770,560'Method of forming metal wiring'20046,767,826'Method of manufacturing semiconductor device'20046,767,812'Method of forming CVD titanium film'20046,747,529'Piezoelectric thin film resonator and frequency variable resonator using the resonator'20046,533,906'Method of manufacturing an oxide epitaxially strained lattice film'20036,514,848'Method for forming an interconnection in a semiconductor element'20036,498,098'Method of forming embedded wiring in a groove in an insulating layer'20026,455,430'Method of embedding contact hole by damascene method'20026,198,652'Non-volatile semiconductor integrated memory device'20016,103,618'Method for forming an interconnection in a semiconductor element'20006,060,735'Thin film dielectric device'20005,952,687'Semiconductor memory device having a trench capacitor with lower electrode inside the trench'19995,929,473'MMIC semiconductor device with WN.sub.x capacitor electrode'19995,909,389'Semiconductor memory device using ferroelectric capacitor'19995,889,299'Thin film capacitor'19995,889,696'Thin-film capacitor device and RAM device using ferroelectric film'19995,796,648'Nonvolatile semiconductor memory device and method for manufacturing same'19985,760,432'Thin film strained layer ferroelectric capacitors'19985,739,563'Ferroelectric type semiconductor device having a barium titanate type dielectric film and method for manufacturing the same'19985,691,219'Method of manufacturing a semiconductor memory device'19975,670,808'Metal oxide capacitor with a WN.sub.X electrode'19975,517,445'Non-volatile semiconductor memory device capable of electrically performing read and write operation and method of reading information from the same'19965,400,275'Semiconductor memory device using ferroelectric capacitor and having only one sense amplifier selected'19955,297,077'Memory having ferroelectric capacitors polarized in nonvolatile mode'19945,155,573'Ferroelectric capacitor and a semiconductor device having the same'19924,958,327'Ultrasonic imaging apparatus'1990

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1990–2019Patents assigned to TOSHIBA KK (57)· patent assignee history
1990Based in Yokohama, JP· patent location history
1992–2019Based in Kawasaki, JP· patent location history
1998–2016Based in Kanagawa, JP· patent location history
2000–2008Patents assigned to OKI ELECTRIC IND CO LTD (18)· patent assignee history
2000–2019Based in Tokyo, JP· patent location history
2008Based in Minato-ku, JP· patent location history
2009–2011Patents assigned to OKI SEMICONDUCTOR CO LTD (5)· patent assignee history
2012–2015Patents assigned to ABE KAZUHIDE (8)· patent assignee history
2012–2015Patents assigned to ITAYA KAZUHIKO (6)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
TOSHIBA KK571990–2019
OKI ELECTRIC IND CO LTD182000–2008
ABE KAZUHIDEself82012–2015
ITAYA KAZUHIKO62012–2015
OKI SEMICONDUCTOR CO LTD52009–2011
Locations
LocationPatentsSpan
Kawasaki, JP391992–2019
Tokyo, JP242000–2019
Kanagawa, JP181998–2016
Minato-ku, JP12008
Yokohama, JP11990