Inventor
Sang-Jin Hyun
Inventor
Suwon-si, KR
Overview
Patents· 70 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices35%
H01LSemiconductor devices29%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1016%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h109%
B82YSpecific uses or applications of nanostructures5%
C23CCoating metallic material3%
B24BMachines, devices, or processes for grinding or polishing2%
H10BElectronic memory devices1%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests1%
PatentTitleYear
10,879,392Semiconductor device202010,872,888Semiconductor devices and methods of fabricating the same202010,854,754Semiconductor device202010,847,464Semiconductor device including conductive structure having nucleation structure and method of forming the same202010,847,515Semiconductor devices with nanowires and methods for fabricating the same202010,790,282Semiconductor devices202010,770,560Semiconductor devices202010,756,195Integrated circuit device and method of manufacturing the same202010,734,280Integrated circuit devices and method of manufacturing the same202010,727,349Semiconductor device202010,714,579Semiconductor devices including recessed source/drain silicides and methods of forming the same202010,686,069Semiconductor device having vertical channel202010,600,913Semiconductor device and method for fabricating the same202010,593,670Methods of manufacturing integrated circuit devices having a fin-type active region202010,580,736Semiconductor device including conductive structure having nucleation structure and method of forming the same202010,566,326Semiconductor devices including a device isolation region in a substrate and/or fin202010,566,433Semiconductor devices having transistors with different work function layers202010,559,687Semiconductor device202010,557,198Gas distribution apparatus and substrate processing apparatus including the same202010,529,817Semiconductor devices having multi-threshold voltage202010,529,816Semiconductor device202010,438,800Semiconductor devices and methods of fabricating the same201910,403,717Semiconductor devices including contact structures that partially overlap silicide layers201910,381,490Semiconductor devices201910,366,955Semiconductor device including conductive structure having nucleation structure and method of forming the same201910,361,194Semiconductor devices and methods of fabricating the same201910,347,763Semiconductor device201910,340,358Semiconductor device and method for fabricating the same201910,312,340Semiconductor devices having work function metal films and tuning materials201910,283,600Integrated circuit device201910,269,629Semiconductor device and method of manufacturing the same201910,177,042Semiconductor device and method for fabricating the same201910,177,149Semiconductor devices with nanowires and with metal layers having different grain sizes201910,134,856Semiconductor device including contact plug and method of manufacturing the same201810,128,245Semiconductor devices including active areas with increased contact area201810,115,797Finfet semiconductor device and method of manufacturing the same201810,079,210Integrated circuit device and method of fabricating the same201810,032,641Semiconductor device and method of fabricating the same20189,929,252'Method of forming thin film and method of manufacturing semiconductor device'20189,923,077'Methods of curing a dielectric layer for manufacture of a semiconductor device'20189,812,448'Semiconductor devices and methods for fabricating the same'20179,806,075'Integrated circuit devices having a Fin-type active region and methods of manufacturing the same'20179,793,368'Semiconductor devices including a rare earth element and methods of forming semiconductor devices including a rare earth element'20179,786,761'Integrated circuit device having an interfacial layer and method of manufacturing the same'20179,780,183'Semiconductor devices having work function metal films and tuning materials'20179,768,255'Semiconductor devices including contact structures that partially overlap silicide layers'20179,728,465'Semiconductor devices with improved source/drain contact resistance and methods of manufacturing the same'20179,543,300'CMOS transistor, semiconductor device including the transistor, and semiconductor module including the device'20179,337,057'Semiconductor device and method for fabricating the same'20169,287,199'CMOS transistor, semiconductor device including the transistor, and semiconductor module including the device'20169,252,058'Semiconductor device and method of fabricating the same'20169,240,483'Fin-type field effect transistors including aluminum doped metal-containing layer'20169,236,313'Method of fabricating semiconductor device having dual gate'20169,048,307'Method of manufacturing a semiconductor device having sequentially stacked high-k dielectric layers'20158,932,922'Method of fabricating semiconductor device having dual gate'20158,786,028'Semiconductor device and method of fabricating the same'20148,748,251'Methods for manufacturing semiconductor devices using etch stop dielectric layers and related devices'20148,580,629'Method of fabricating semiconductor device using a work function control film'20138,557,651'Method of manufacturing a semiconductor device using an etchant'20138,513,740'Complementary metal oxide semiconductor device having metal gate stack structure and method of manufacturing the same'20138,460,999'Non-volatile memory devices with multiple layers having band gap relationships among the layers'20138,367,502'Method of manufacturing dual gate semiconductor device'20138,293,599'Methods of forming semiconductor devices having gates with different work functions using selective injection of diffusion inhibiting materials'20127,972,950'Method of fabricating semiconductor device having dual gate'20117,973,355'Nonvolatile memory devices with multiple layers having band gap relationships among the layers'20117,910,421'Methods of forming devices including different gate insulating layers on PMOS/NMOS regions'20117,692,196'Memory devices and methods of manufacturing the same'20107,492,006'Semiconductor transistors having surface insulation layers and methods of fabricating such transistors'20097,053,006'Methods of fabricating oxide layers by plasma nitridation and oxidation'20066,930,062'Methods of forming an oxide layer in a transistor having a recessed gate'2005Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2005–2012Based in Gyeonggi-do, KR· patent location history
2006–2020Patents assigned to SAMSUNG ELECTRONICS CO LTD (69)· patent assignee history
2006Based in Kyungki-do, KR· patent location history
2010–2020Based in Suwon-si, KR· patent location history
2012–2017Patents assigned to HYUN SANG-JIN (17)· patent assignee history
2012–2017Patents assigned to NA HOON-JOO (11)· patent assignee history
2012–2016Patents assigned to HONG HYUNG-SEOK (9)· patent assignee history
2012–2016Patents assigned to PARK HONG-BAE (7)· patent assignee history
2017–2020Based in Hwaseong-si, KR· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SAMSUNG ELECTRONICS CO LTD | 69 | 2006–2020 |
| HYUN SANG-JINself | 17 | 2012–2017 |
| NA HOON-JOO | 11 | 2012–2017 |
| HONG HYUNG-SEOK | 9 | 2012–2016 |
| PARK HONG-BAE | 7 | 2012–2016 |
Locations
| Location | Patents | Span |
|---|---|---|
| Suwon-si, KR | 63 | 2010–2020 |
| Gyeonggi-do, KR | 4 | 2005–2012 |
| Hwaseong-si, KR | 2 | 2017–2020 |
| Kyungki-do, KR | 1 | 2006 |