LexDanaLexDanabeta
Inventor

Hirokazu Goto

Inventor
Tokyo, JP

Overview

44→
Patents
1977–2020
Patent span
Electricity
Primary field (CPC H)

Patents· 44 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices16%
H01LSemiconductor devices11%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1011%
G01RMeasuring electric variables8%
C30BSingle-crystal growth6%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h106%
G07DHandling of coins or valuable papers, e.g. testing, sorting by denominations, counting, dispensing, changing or depositing5%
A47BTables4%
G11BInformation storage based on relative movement between record carrier and transducer4%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests4%
PatentTitleYear
10,553,674Substrate for semiconductor device, semiconductor device, and method for manufacturing semiconductor device202010,319,587Method of manufacturing epitaxial wafer and silicon-based substrate for epitaxial growth201910,189,670Paper sheet handling machine and paper sheet handling method201910,133,524Electronic apparatus, wireless communication device, and power control method201810,115,589Epitaxial substrate for electronic devices, electronic device, method for producing the epitaxial substrate for electronic devices, and method for producing the electronic device201810,068,985Method for manufacturing semiconductor substrate, method for manufacturing semiconductor device, semiconductor substrate, and semiconductor device20189,966,259Silicon-based substrate, semiconductor device, and method for manufacturing semiconductor device20189,938,638Method for producing semiconductor epitaxial wafer and semiconductor epitaxial wafer20189,876,101Semiconductor substrate and semiconductor device20189,673,052'Silicon-based substrate having first and second portions'20179,520,286'Semiconductor substrate, semiconductor device and method of manufacturing the semiconductor device'20169,401,420'Semiconductor device'20169,281,187'Method for manufacturing nitride semiconductor device'20169,027,414'Ultrasonic flow rate measurement device with temperature sensing circuit'20158,630,475'Banknote handling machine and banknote handling method'20148,251,197'Banknote deposit machine, processing system and method'20128,087,581'Banknote handling device'20127,982,242'Warp-free semiconductor wafer, and devices using the same'20117,948,200'Motor drive device, image reading device, image forming apparatus, and motor drive method'20117,694,797'Printed note processing machine and system'20107,067,923'Semiconductor device having hall-effect and manufacturing method thereof'20066,989,665'Electric current detector with hall effect sensor'20066,921,955'Noise-proof semiconductor device having a Hall effect element'20056,841,989'Hall-effect current detector'20056,814,009'Load bearing pillar'20046,781,358'Hall-effect current detector'20046,759,841'Hall-effect current detector'2004D0489547'Appliance stand'20046,727,683'Hall-effect current detector'20046,545,457'Current detector utilizing hall effect'20036,209,974'Wire dress protector for a television cabinet stand'20016,152,549'Frameless sliding door system for a television cabinet stand'20006,095,623'Three pillar construction stand'20005,112,774'Method of fabricating a high-voltage semiconductor device having a rectifying barrier'19925,081,510'High-voltage semiconductor device having a rectifying barrier, and method of fabrication'19925,006,483'Fabrication of P-N junction semiconductor device'19914,980,749'P-N junction semiconductor device and method of fabrication'19904,785,241'Encoder unit using magnetoresistance effect element'19884,775,909'Magnetic head using a magnetic thin film and first, second and third core members'19884,649,449'Perpendicular magnetic head'19874,506,220'Temperature compensated magnetoresistive effect thin film magnetic sensor'19854,443,826'Magneto-resistive effect type magnetic head'19844,438,470'Magnetic head of magnetic reluctance effect type and a method for making the same'19844,057,691'Switching network with crosstalk elimination capability'1977

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1977–2005Based in Tokyo, JP· patent location history
1984–1988Patents assigned to CANON DENSHI KK (5)· patent assignee history
1990–2020Patents assigned to SANKEN ELECTRIC CO LTD (21)· patent assignee history
1990–1992Based in Hannou, JP· patent location history
2000–2001Based in San Diego, CA, US· patent location history
2010–2019Patents assigned to GLORY KOGYO KK (5)· patent assignee history
2010–2014Based in Himeji, JP· patent location history
2012–2018Patents assigned to GOTO HIROKAZU (5)· patent assignee history
2016–2020Patents assigned to SHINETSU HANDOTAI KK (11)· patent assignee history
2016–2020Based in Minato-ku, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
SANKEN ELECTRIC CO LTD211990–2020
SHINETSU HANDOTAI KK112016–2020
CANON DENSHI KK51984–1988
GLORY KOGYO KK52010–2019
GOTO HIROKAZUself52012–2018
Locations
LocationPatentsSpan
Tokyo, JP121977–2005
Minato-ku, JP112016–2020
Hannou, JP41990–1992
Himeji, JP32010–2014
San Diego, California, US32000–2001