Inventor

Dmytro Apalkov

Inventor

San Jose, CA, US

Overview

2009–2021

Patent span

Electricity

Primary field (CPC H)

Patents· 73 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

G11Cprimary

G11CStatic stores26%

H10NElectric solid-state devices not otherwise provided for24%

H01LSemiconductor devices18%

H10BElectronic memory devices14%

H01FMagnets6%

G01RMeasuring electric variables2%

B82YSpecific uses or applications of nanostructures2%

H10DInorganic electric semiconductor devices2%

H03KPulse technique1%

Y10TTechnical subjects covered by former us classification1%

PatentTitleYear

10,885,961Race-track memory with improved writing scheme2021 10,644,226Method and system for engineering the secondary barrier layer in dual magnetic junctions2020 10,585,630Selectorless 3D stackable memory2020 10,573,363Method and apparatus for performing self-referenced read in a magnetoresistive random access memory2020 10,439,133Method and system for providing a magnetic junction having a low damping hybrid free layer2019 10,411,184Vertical spin orbit torque devices2019 10,381,550Method and system for engineering the secondary barrier layer in dual magnetic junctions2019 10,305,026Cross-point architecture for spin-transfer torque magnetoresistive random access memory with spin orbit writing2019 10,297,300Method and system for determining temperature using a magnetic junction2019 10,276,225Method and system for providing a magnetic junction usable in spin transfer or spin-orbit torque applications and including a magnetic barrier layer2019 10,276,226Method and system for determining temperature using a magnetic junction2019 10,274,571Method and apparatus for measuring exchange stiffness at a patterned device level2019 10,205,092Method and system for providing a diluted free layer magnetic junction usable in spin transfer or spin-orbit torque applications2019 10,177,197Magnetic junctions having elongated free layers2019 10,170,518Self-assembled pattern process for fabricating magnetic junctions usable in spin transfer torque applications2019 10,170,690Hybrid-fl with edge-modified coupling2019 10,164,177Method and system for providing a magnetic junction usable in spin transfer torque applications using a post-pattern anneal2018 10,121,960Method and system for providing magnetic junctions usable in spin transfer torque applications utilizing interstitial glass-forming agent(s)2018 10,121,961Magnetic devices including magnetic junctions having tilted easy axes and enhanced damping programmable using spin orbit torque2018 10,062,732DMTJ structure for sub-25NM designs with cancelled flowering field effects2018 10,003,015Method and system for providing a diluted free layer magnetic junction usable in spin transfer torque applications2018 9,966,901Spin-torque oscillator based on easy-cone anisotropy2018 9,929,339'Method and system for providing magnetic junctions including self-initializing reference layers'2018 9,917,249'Method and system for providing a magnetic junction usable in spin transfer torque applications and including a magnetic barrier layer'2018 9,825,220'B2-MTJ design with texture blocking decoupling layer for sub-25 nm STT-MRAM'2017 9,806,253'Method for providing a high perpendicular magnetic anisotropy layer in a magnetic junction usable in spin transfer torque magnetic devices using multiple anneals'2017 9,792,971'Method and system for providing magnetic junctions with rare earth-transition metal layers'2017 9,741,927'Method and system for providing magnetic junctions having a gradient in magnetic ordering temperature'2017 9,634,241'Method and system for providing magnetic junctions including Heusler multilayers'2017 9,608,039'Magnetic junctions programmable using spin-orbit interaction torque in the absence of an external magnetic field'2017 9,490,000'Method and system for providing thermally assisted magnetic junctions having a multi-phase operation'2016 9,490,421'Method and system for providing vertical spin transfer switched magnetic junctions and memories using such junctions'2016 9,478,730'Method and system for providing magnetic layers having insertion layers for use in spin transfer torque memories'2016 9,460,397'Quantum computing device spin transfer torque magnetic memory'2016 9,384,811'Method and system for providing a thermally assisted spin transfer torque magnetic device including smart thermal barriers'2016 9,287,322'Method for controlling magnetic properties through ion diffusion in a magnetic junction usable in spin transfer torque magnetic random access memory applications'2016 9,236,561'Method and system for providing multiple self-aligned logic cells in a single stack'2016 9,203,017'Method and system for providing magnetic junctions including a package structure usable in spin transfer torque memories'2015 9,166,152'Diffusionless transformations in MTJ stacks'2015 9,142,758'Method and system for providing a magnetic junction configured for precessional switching using a bias structure'2015 9,130,155'Magnetic junctions having insertion layers and magnetic memories using the magnetic junctions'2015 9,105,830'Method and system for providing dual magnetic tunneling junctions using spin-orbit interaction-based switching and memories utilizing the dual magnetic tunneling junctions'2015 9,087,633'Magnetic device having a magnetic material in a contact structure coupled to a magnetic element and method of manufacture thereof'2015 9,082,534'Magnetic element having perpendicular anisotropy with enhanced efficiency'2015 9,076,537'Method and system for providing a magnetic tunneling junction using spin-orbit interaction based switching and memories utilizing the magnetic tunneling junction'2015 9,076,954'Method and system for providing magnetic memories switchable using spin accumulation and selectable using magnetoelectric devices'2015 9,076,541'Architecture for magnetic memories including magnetic tunneling junctions using spin-orbit interaction based switching'2015 9,029,965'Method and system for providing magnetic junctions having a thermally stable and easy to switch magnetic free layer'2015 8,890,569'Method and system for providing a nonvolatile logic array'2014 8,890,267'Method and system for providing magnetic junctions having a graded magnetic free layer'2014 8,786,039'Method and system for providing magnetic junctions having engineered perpendicular magnetic anisotropy'2014 8,780,665'Method and system for providing magnetic tunneling junction elements having an easy cone anisotropy'2014 8,766,383'Method and system for providing a magnetic junction using half metallic ferromagnets'2014 8,723,557'Multi-supply symmetric driver circuit and timing method'2014 8,710,602'Method and system for providing magnetic junctions having improved characteristics'2014 8,704,547'Method and system for providing spin transfer based logic devices'2014 8,704,319'Method and system for providing magnetic layers having insertion layers for use in spin transfer torque memories'2014 8,698,259'Method and system for providing a magnetic tunneling junction using thermally assisted switching'2014 8,697,484'Method and system for setting a pinned layer in a magnetic tunneling junction'2014 8,649,214'Magnetic memory including magnetic memory cells integrated with a magnetic shift register and methods thereof'2014 8,456,882'Method and system for providing dual magnetic tunneling junctions usable in spin transfer torque magnetic memories'2013 8,446,761'Method and system for providing multiple logic cells in a single stack'2013 8,432,009'Method and system for providing magnetic layers having insertion layers for use in spin transfer torque memories'2013 8,422,285'Method and system for providing dual magnetic tunneling junctions usable in spin transfer torque magnetic memories'2013 8,406,045'Three terminal magnetic element'2013 8,399,941'Magnetic junction elements having an easy cone anisotropy and a magnetic memory using such magnetic junction elements'2013 8,378,438'Method and system for providing magnetic elements having enhanced magnetic anisotropy and memories using such magnetic elements'2013 8,374,048'Method and system for providing magnetic tunneling junction elements having a biaxial anisotropy'2013 8,248,100'Method and system for providing spin transfer based logic devices'2012 8,159,866'Method and system for providing dual magnetic tunneling junctions usable in spin transfer torque magnetic memories'2012 7,800,942'Method and system for providing a magnetic element and magnetic memory being unidirectional writing enabled'2010 7,518,835'Magnetic elements having a bias field and magnetic memory devices using the magnetic elements'2009 7,486,552'Method and system for providing a spin transfer device with improved switching characteristics'2009

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2009–2014Patents assigned to GRANDIS INC (14)· patent assignee history

2009–2010Based in Milpitas, CA, US· patent location history

2012–2016Patents assigned to APALKOV DMYTRO (27)· patent assignee history

2012–2016Patents assigned to NIKITIN VLADIMIR (16)· patent assignee history

2012–2021Based in San Jose, CA, US· patent location history

2013–2015Patents assigned to TANG XUETI (10)· patent assignee history

2014–2021Patents assigned to SAMSUNG ELECTRONICS CO LTD (59)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
SAMSUNG ELECTRONICS CO LTD	59	2014–2021
APALKOV DMYTROself	27	2012–2016
NIKITIN VLADIMIR	16	2012–2016
GRANDIS INC	14	2009–2014
TANG XUETI	10	2013–2015

Locations

Location	Patents	Span
San Jose, California, US	70	2012–2021
Milpitas, California, US	3	2009–2010