Inventor
Takeshi Ishiguro
Inventor
Fukushima, JP
Overview
Patents· 28 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices33%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1016%
H01LSemiconductor devices14%
C07CAcyclic or carbocyclic compounds3%
C12PFermentation or enzyme-using processes to synthesise a desired chemical compound or composition or to separate optical isomers from a racemic mixture3%
G01NInvestigating or analysing materials by determining their chemical or physical properties3%
G06FElectric digital data processing3%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h103%
Y02PClimate change mitigation technologies in the production or processing of goods3%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests3%
PatentTitleYear
11,101,823Memory system20219,543,380'Multi-directional trenching of a die in manufacturing superjunction devices'20179,536,941'Gate pad and gate feed breakdown voltage enhancement'20179,461,109'Method of forming superjunction high voltage devices using wafer bonding'20169,349,725'Stripe orientation for trenches and contact windows'20169,318,554'Gate pad and gate feed breakdown voltage enhancement'20169,147,751'Methods of manufacturing superjunction devices'20158,963,239'800 V superjunction device'20158,946,814'Superjunction devices having narrow surface layout of terminal structures, buried contact regions and trench gates'20158,580,651'Methods for manufacturing a trench type semiconductor device having a thermally sensitive refill material'20138,158,004'Method of manufacturing substances by supercritical fluid chromatography'20128,114,751'Multi-angle rotation for ion implantation of trenches in superjunction devices'20128,041,850'Storage apparatus and data integrity assurance method'20118,012,806'Multi-directional trenching of a die in manufacturing superjunction devices'20117,846,821'Multi-angle rotation for ion implantation of trenches in superjunction devices'20107,795,045'Trench depth monitor for semiconductor manufacturing'20107,723,172'Methods for manufacturing a trench type semiconductor device having a thermally sensitive refill material'20107,632,760'Semiconductor device having field stabilization film and method'2009D0558319'Humidifier'20076,982,461'Lateral FET structure with improved blocking voltage and on resistance performance and method'20066,613,622'Method of forming a semiconductor device and structure therefor'20036,589,845'Method of forming a semiconductor device and structure therefor'20036,555,877'NMOSFET with negative voltage capability formed in P-type substrate and method of making the same'2003D0430597'Printer'2000D0401265'Electronic keyboard musical instrument'19985,811,293'Processes for producing optically active 2-amino-1-phenylethanol derivatives by reduction of the corresponding ketone'19985,629,200'Production of optically active 2-amino-1-phenylethanol derivatives by asymetrical assimilation'19973,934,139'Apparatus for measuring calorific power of hydrocarbon compounds'1976Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1997–2012Patents assigned to DAICEL CHEM (3)· patent assignee history
1997–1998Based in Nishikamo-gun, JP· patent location history
2003–2009Patents assigned to SEMICONDUCTOR COMPONENTS IND (5)· patent assignee history
2003–2015Based in Aizuwakamatsu, JP· patent location history
2010–2016Patents assigned to ICEMOS TECHNOLOGY LTD (10)· patent assignee history
2010–2017Based in Fukushima, JP· patent location history
2012–2017Patents assigned to ISHIGURO TAKESHI (4)· patent assignee history
2012–2017Patents assigned to GRIFFIN HUGH J (2)· patent assignee history
2012Based in Myoko-shi, JP· patent location history
2021Based in Yokohama-shi, Kanagawa, JP· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| ICEMOS TECHNOLOGY LTD | 10 | 2010–2016 |
| SEMICONDUCTOR COMPONENTS IND | 5 | 2003–2009 |
| ISHIGURO TAKESHIself | 4 | 2012–2017 |
| DAICEL CHEM | 3 | 1997–2012 |
| GRIFFIN HUGH J | 2 | 2012–2017 |
Locations
| Location | Patents | Span |
|---|---|---|
| Fukushima, JP | 11 | 2010–2017 |
| Aizuwakamatsu, JP | 8 | 2003–2015 |
| Nishikamo-gun, JP | 2 | 1997–1998 |
| Yokohama-shi, Kanagawa, JP | 1 | 2021 |
| Myoko-shi, JP | 1 | 2012 |