Inventor
Cong-Min Fang
Inventor
Hsinchu, TW
Overview
Patents· 4 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices25%
H10DInorganic electric semiconductor devices25%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1017%
B01LChemical or physical laboratory apparatus for general use8%
C12QMeasuring or testing processes involving enzymes, nucleic acids or microorganisms8%
G01NInvestigating or analysing materials by determining their chemical or physical properties8%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h108%
PatentTitleYear
10,367,059Method of manufacturing a semiconductor structure having a buried raised portion201910,096,596Semiconductor device structure having a plurality of gate structures20189,761,658'Shallow trench isolation structure with raised portion between active areas and manufacturing method thereof'20179,448,178'Integrated microfluidic radioassay and imaging platform for small sample analysis'2016Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2016Patents assigned to UNIV CALIFORNIA (1)· patent assignee history
2016Based in Newbury Park, CA, US· patent location history
2017–2019Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (3)· patent assignee history
2017–2019Based in Hsinchu, TW· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TAIWAN SEMICONDUCTOR MFG CO LTD | 3 | 2017–2019 |
| UNIV CALIFORNIA | 1 | 2016 |
Locations
| Location | Patents | Span |
|---|---|---|
| Hsinchu, TW | 3 | 2017–2019 |
| Newbury Park, California, US | 1 | 2016 |