LexDanaLexDanabeta
Inventor

Yusuke Mori

Inventor
Suita, JP

Overview

89→
Patents
1989–2021
Patent span
Electricity
Primary field (CPC H)

Patents· 89 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

C30Bprimary
C30BSingle-crystal growth25%
Y10TTechnical subjects covered by former us classification10%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h108%
H10HInorganic light-emitting semiconductor devices having potential barriers7%
G01NInvestigating or analysing materials by determining their chemical or physical properties6%
G02FOptical devices or arrangements for the control of light by modification of the optical properties of the media of the elements involved therein4%
H01LSemiconductor devices4%
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light4%
H10DInorganic electric semiconductor devices4%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests3%
PatentTitleYear
11,031,800Determination apparatus, surveillance apparatus, surveillance system, determination method, surveillance method, and non-transitory storage medium202110,998,295Semiconductor device202110,927,476Production method for group III nitride crystal202110,910,511Manufacturing method of III-V compound crystal and manufacturing method of semiconductor device202110,719,894Information processing apparatus, information processing method, and program202010,309,036Method for manufacturing group-III nitride semiconductor crystal substrate201910,266,965Method for producing group-III nitride crystal, group-III nitride crystal, semiconductor device, and device for producing group-III nitride crystal201910,260,165Method for manufacturing nitride crystal substrate and substrate for crystal growth201910,202,710Process for producing group III nitride crystal and apparatus for producing group III nitride crystal201910,197,710Antifogging article and method for manufacturing the same, water absorbing layer forming composition, and article for transportation apparatus201910,145,022Crystal growth apparatus and crystal production method201810,059,590Method for producing group III nitride crystal201810,026,612Method for producing group III nitride crystal, group III nitride crystal, semiconductor device and apparatus for producing group III nitride crystal201810,027,921Display device with movable stand201810,011,921Method for producing group III element nitride crystal, group III element nitride crystal, semiconductor device, method for producing semiconductor device, and group III element nitride crystal production device20189,834,859Method for producing group III nitride crystal, group III nitride crystal, and semiconductor device20179,751,068'Target substance transfer method, crystal production method, composition production method, and target substance transfer device'20179,310,385'Platelet measurement reagent, platelet measurement reagent kit, and platelet measurement method'20169,096,950'Nitride crystal and method for producing the same'20159,081,021'Platelet measurement reagent, platelet measurement reagent kit, and platelet measurement method'20159,017,479'Nitride single crystal manufacturing apparatus'20158,999,059'Process for producing a nitride single crystal and apparatus therefor'20158,790,929'Reagent for diluting blood sample and method for measuring mean corpuscular volume by using the same'20148,679,425'Reagent container and reagent set'20148,657,955'Melt composition for gallium nitride single crystal growth and method for growing gallium nitride single crystal'20148,597,952'Reagent, reagent kit and analyzing method'20138,574,361'Group-III element nitride crystal producing method and group-III element nitride crystal'20138,568,532'Method for growing single crystal of group III metal nitride and reaction vessel for use in same'20138,506,705'Method for manufacturing nitride single crystal'20138,507,364'N-type group III nitride-based compound semiconductor and production method therefor'20138,501,141'Method for producing group III nitride semiconductor'20138,486,190'Process for producing single crystal'20138,472,187'Display apparatus'20138,443,017'Digital data processor'20138,372,299'Substrate treating apparatus and substrate treating method'20138,361,222'Method for producing group III nitride-based compound semiconductor'20138,293,536'Reagent, reagent kit and analyzing method'20128,287,760'Light-emitting apparatus, phosphorescent portion, and method of producing the same'20128,231,729'Apparatus for producing nitride single crystal'20128,227,324'Method for producing group III nitride-based compound semiconductor crystal'20128,216,365'Method for producing a semiconductor crystal'20128,187,507'GaN crystal producing method, GaN crystal, GaN crystal substrate, semiconductor device and GaN crystal producing apparatus'20128,123,856'Method and apparatus for producing group III nitride based compound semiconductor'20128,084,281'Semiconductor substrate, electronic device, optical device, and production methods therefor'20118,037,739'Method for analyzing sample in liquid'20118,038,794'Group III-nitride crystal, manufacturing method thereof, group III-nitride crystal substrate and semiconductor device'20118,025,728'Method for manufacturing single crystal of nitride'20117,959,729'Method for producing group-III-element nitride single crystals and apparatus used therein'20117,948,673'Optical wavelength conversion element having a cesium-lithium-borate crystal'20117,923,229'Method of classifying and counting leukocytes'20117,905,958'Group III-nitride semiconductor crystal and manufacturing method thereof, and group III-nitride semiconductor device'20117,842,133'Single crystal growing method'20107,833,347'Process and apparatus for producing nitride single crystal'20107,794,539'Method for producing III group element nitride crystal, production apparatus for use therein, and semiconductor element produced thereby'20107,754,012'Apparatus for production of crystal of group III element nitride and process for producing crystal of group III element nitride'20107,744,696'Method for preparing borate-based crystal and laser oscillation apparatus'20107,708,833'Crystal growing apparatus'20107,700,001'Light-emitting apparatus, phosphor and method of producing it'20107,625,730'Method for classifying and counting leukocytes'20097,595,583'Cold-cathode fluorescent lamp and backlight unit'20097,569,373'Method for counting megakaryocytes'20097,507,292'Method for producing group III element nitride single crystal and group III element nitride transparent single crystal prepared thereby'20097,459,023'Method for producing semiconductor crystal'20087,435,295'Method for producing compound single crystal and production apparatus for use therein'20087,419,545'Method for producing silicon carbide (SiC) single crystal and silicon carbide (SiC) single crystal obtained by such method'20087,405,082'Methods and devices for measuring reticulocytes'20087,381,268'Apparatus for production of crystal of group III element nitride and process for producing crystal of group III element nitride'20087,361,220'Method of manufacturing group III nitride single crystal, device used for the method and group III nitride single crystal obtained by the method'20087,309,534'Group III nitride crystals usable as group III nitride substrate, method of manufacturing the same, and semiconductor device including the same'20077,288,152'Method of manufacturing GaN crystals and GaN crystal substrate, GaN crystals and GaN crystal substrate obtained by the method, and semiconductor device including the same'20077,288,151'Method of manufacturing group-III nitride crystal'20077,276,851'Discharge lamp device and backlight having external electrode unit'20077,258,462'Backlight unit including curved fluorescent lamp, and liquid crystal display apparatus including the backlight unit'20077,255,742'Method of manufacturing Group III nitride crystals, method of manufacturing semiconductor substrate, Group III nitride crystals, semiconductor substrate, and electronic device'20077,247,203'Process for producing crystalline nucleus and method of screening crystallization conditions'20077,198,738'Cesium-lithium-borate crystal and its application to frequency conversion of laser light'20077,176,115'Method of manufacturing Group III nitride substrate and semiconductor device'20077,142,354'Wavelength conversion method, wavelength conversion device, and laser beam machine'20067,125,801'Method of manufacturing Group III nitride crystal substrate, etchant used in the method, Group III nitride crystal substrate, and semiconductor device including the same'20067,058,103'Light-emitting apparatus, phosphor, and method of producing it'20067,049,093'Method of classifying and counting nucleated bone marrow cells'20067,029,528'Method for flattening surface of oxide crystal to ultra high degree'20067,006,539'Nonlinear optical crystal'20066,843,849'Method and apparatus for growing high quality single crystal'20056,842,233'Method of classifying particles on two-dimensional frequency distribution map and blood analyzer utilizing the same'20056,551,528'Wavelength conversion crystal and method for generating laser beam, and apparatus for generating laser beam'20036,296,784'Cesium-lithium-borate crystal and its application to frequency conversion of laser light'20015,998,313'Cesium-lithium borate crystal'19994,872,415'Meter for a vehicle'1989

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1999–2021Based in Osaka, JP· patent location history
2005–2016Based in Kobe, JP· patent location history
2006–2017Patents assigned to MORI YUSUKE (28)· patent assignee history
2006–2013Based in Katano, JP· patent location history
2007–2021Based in Suita, JP· patent location history
2008–2021Patents assigned to UNIV OSAKA (30)· patent assignee history
2008–2015Patents assigned to NGK INSULATORS LTD (18)· patent assignee history
2011–2015Patents assigned to IWAI MAKOTO (14)· patent assignee history
2011–2015Patents assigned to SASAKI TAKATOMO (14)· patent assignee history
2019–2021Based in Tokyo, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
UNIV OSAKA302008–2021
MORI YUSUKEself282006–2017
NGK INSULATORS LTD182008–2015
IWAI MAKOTO142011–2015
SASAKI TAKATOMO142011–2015
Locations
LocationPatentsSpan
Suita, JP282007–2021
Osaka, JP211999–2021
Katano, JP172006–2013
Kobe, JP92005–2016
Tokyo, JP32019–2021