Inventor
Tetsuo Fujii
Inventor
Toyohashi, JP
Overview
Patents· 123 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Wprimary
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1015%
G01PMeasuring linear or angular speed, acceleration, deceleration, or shock13%
B81BMicrostructural devices or systems, e.g. micromechanical devices11%
H10DInorganic electric semiconductor devices9%
G01CMeasuring distances, levels or bearings6%
Y10TTechnical subjects covered by former us classification5%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h105%
B81CProcesses or apparatus specially adapted for the manufacture or treatment of microstructural devices or systems4%
C07CAcyclic or carbocyclic compounds4%
G01LMeasuring force, stress, torque, work, mechanical power, mechanical efficiency, or fluid pressure4%
PatentTitleYear
10,446,714Highly efficient gallium nitride based light emitting diodes via surface roughening20199,515,067'Semiconductor device having switching element and free wheel diode and method for controlling the same'20169,366,534'Physical quantity sensor and method of making the same'20169,341,513'Photodetecting element having an optical absorption layer, photodetecting device having an optical absorption layer, and auto lighting device'20169,029,993'Semiconductor device including semiconductor chip mounted on lead frame'20158,975,645'Optical filter'20158,941,229'Semiconductor device and method of manufacturing the same'20158,890,252'Semiconductor device having switching element and free wheel diode and method for controlling the same'20148,829,627'Dynamic quantity sensor device and manufacturing method of the same'20148,822,263'Epitaxial growth method of a zinc oxide based semiconductor layer, epitaxial crystal structure, epitaxial crystal growth apparatus, and semiconductor device'20148,815,701'Method for manufacturing semiconductor device having SOI substrate'20148,785,231'Method of making semiconductor device'20148,766,296'Highly efficient gallium nitride based light emitting diodes via surface roughening'20148,759,926'Semiconductor physical quantity sensor'20148,749,019'Region-divided substrate, semiconductor device having region-divided substrate, and method for manufacturing the same'20148,710,568'Semiconductor device having a plurality of elements on one semiconductor substrate and method of manufacturing the same'20148,624,367'Semiconductor device including semiconductor chip mounted on lead frame'20148,610,133'Photodetection device'20138,601,871'Physical quantity sensor and method of making the same'20138,604,565'Physical quantity detection device and method for manufacturing the same'20138,587,168'Electric device mounted in electric compressor'20138,578,761'Concentration sensor device and concentration detecting method'20138,519,493'Semiconductor device having multiple substrates'20138,497,557'Semiconductor device'20138,455,973'Region divided substrate and semiconductor device'20138,441,122'Semiconductor device having semiconductor chip and metal plate'20138,413,507'Semiconductor dynamic quantity sensor and method of manufacturing the same'20138,390,106'Circuit board with built-in semiconductor chip and method of manufacturing the same'20138,359,923'Physical quantity sensor'20138,349,634'Semiconductor device with sealed cap'20138,283,738'Semiconductor device including sensor member and cap member and method of making the same'20128,278,731'Semiconductor device having SOI substrate and method for manufacturing the same'20128,278,747'Semiconductor apparatus having a two-side heat radiation structure'20128,264,051'Semiconductor device and manufacturing method of the same'20128,234,920'Angular velocity sensor having drive member coupling beam spaced apart from drive members'20128,210,040'Oscillating angular speed sensor'20128,169,082'Semiconductor device and method for manufacturing the same'20128,154,073'Semiconductor device'20128,148,809'Semiconductor device, method for manufacturing the same, and multilayer substrate having the same'20128,106,471'Semiconductor dynamic quantity sensor and method of producing the same'20128,098,000'Ultrasonic sensor'20128,089,144'Semiconductor device and method for manufacturing the same'20128,035,154'Semiconductor device including a plurality of memory cells with no difference in erasing properties'20118,026,572'Semiconductor device and method for manufacturing same'20118,022,477'Semiconductor apparatus having lateral type MIS transistor'20117,968,958'Semiconductor device and manufacturing method of the same'20117,968,432'Laser processing apparatus and laser processing method'20117,950,288'Physical quantity sensor'20117,911,023'Semiconductor apparatus including a double-sided electrode element and method for manufacturing the same'20117,901,967'Dicing method for semiconductor substrate'20117,891,244'Method of making a physical quantity sensor'20117,893,458'Semiconductor device having lateral MOS transistor and zener diode'2011RE042083'Acceleration sensor and process for the production thereof'20117,866,210'Semiconductor mechanical sensor'20117,859,091'Manufacturing methods for semiconductor device with sealed cap'20107,838,331'Method for dicing semiconductor substrate'20107,833,876'Semiconductor device having multiple element formation regions and manufacturing method thereof'20107,821,085'Physical quantity sensor and method for manufacturing the same'20107,781,938'Ultrasonic sensor including a piezoelectric element'20107,762,141'Pressure sensor and manufacturing method thereof'20107,704,763'Highly efficient group-III nitride based light emitting diodes via fabrication of structures on an N-face surface'2010RE041213'Dynamic amount sensor and process for the production thereof'20107,685,877'Semiconductor mechanical sensor'20107,671,432'Dynamic quantity sensor'20107,662,668'Method for separating a semiconductor substrate into a plurality of chips along with a cutting line on the semiconductor substrate'2010RE041047'Acceleration sensor and process for the production thereof'20097,540,199'Physical quantity sensor'20097,511,484'Magnetic sensor and method for detecting magnetic field'20097,466,000'Semiconductor device having multiple substrates'2008RE040561'Acceleration sensor and process for the production thereof'20087,407,827'Semiconductor mechanical sensor'2008RE040347'Acceleration sensor and process for the production thereof'20087,298,022'Semiconductor sensor'20077,091,109'Semiconductor device and method for producing the same by dicing'20067,089,799'Pressure sensor device and method of producing the same'20067,040,165'Semiconductor mechanical sensor'20066,979,873'Semiconductor device having multiple substrates'20056,938,486'Semiconductor mechanical sensor'20056,868,727'Semiconductor mechanical sensor'20056,787,866'Semiconductor device having a moveable member therein and a protective member disposed thereon'20046,693,303'Nitride semiconductor device and method for manufacturing the same'20046,584,852'Electrical capacitance pressure sensor having electrode with fixed area and manufacturing method thereof'20036,550,331'Semiconductor mechanical sensor'20036,525,400'Semiconductor memory device and method of manufacturing the same'20036,463,803'Semiconductor mechanical sensor'20026,429,506'Semiconductor device produced by dicing'20026,373,093'Semiconductor memory device and method of manufacturing the same'20026,365,458'Semiconductor memory device and method of manufacturing the same'20026,255,741'Semiconductor device with a protective sheet to affix a semiconductor chip'20016,244,112'Acceleration sensor and process for the production thereof'20016,227,050'Semiconductor mechanical sensor and method of manufacture'20016,227,049'Acceleration sensor and process for the production thereof'20016,171,881'Acceleration sensor and process for the production thereof'20015,872,024'Method for manufacturing a mechanical force sensing semiconductor device'19995,747,846'Programmable non-volatile memory cell'19985,627,399'Semiconductor device'19975,627,318'Mechanical force sensing semiconductor device'19975,523,692'Oil deterioration detector'19965,520,051'Strain sensing device'19965,474,952'Process for producing a semiconductor device'19955,470,771'Method of manufacturing a floating gate memory device'19955,461,916'Mechanical force sensing semiconductor device'19955,442,223'Semiconductor device with stress relief'1995RE034893'Semiconductor pressure sensor and method of manufacturing same'19955,403,769'Process for producing a semiconductor device'19955,320,705'Method of manufacturing a semiconductor pressure sensor'19945,313,836'Semiconductor sensor for accelerometer'19945,306,942'Semiconductor device having a shield which is maintained at a reference potential'19945,138,422'Semiconductor device which includes multiple isolated semiconductor segments on one chip'19925,095,349'Semiconductor pressure sensor and method of manufacturing same'19925,063,423'Semiconductor memory device of a floating gate tunnel oxide type'19915,028,967'Achromatic lens for ultraviolet rays'19915,019,526'Method of manufacturing a semiconductor device having a plurality of elements'19915,017,979'EEPROM semiconductor memory device'19915,017,505'Method of making a nonvolatile semiconductor memory apparatus with a floating gate'19914,975,390'Method of fabricating a semiconductor pressure sensor'19904,963,505'Semiconductor device and method of manufacturing same'19904,924,277'MIS transistor device'19904,891,984'Acceleration detecting apparatus formed by semiconductor'19904,870,146'Process for producing a light color high softening point hydrocarbon resin'19894,867,561'Apparatus for optically detecting an extraneous matter on a translucent shield'19894,774,556'Non-volatile semiconductor memory device'19884,393,365'Method and system for forecasting and warning on automotive abnormalities'1983Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1983–2002Patents assigned to NIPPON DENSO CO (30)· patent assignee history
1983–2016Based in Toyohashi, JP· patent location history
1991Based in Yamato, JP· patent location history
2001–2016Patents assigned to DENSO CORP (81)· patent assignee history
2001–2011Based in Kariya, JP· patent location history
2004–2016Patents assigned to ROHM CO LTD (5)· patent assignee history
2004–2016Based in Kyoto, JP· patent location history
2010–2019Based in Goleta, CA, US· patent location history
2012–2019Patents assigned to FUJII TETSUO (35)· patent assignee history
2012–2013Patents assigned to YOKURA HISANORI (5)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| DENSO CORP | 81 | 2001–2016 |
| FUJII TETSUOself | 35 | 2012–2019 |
| NIPPON DENSO CO | 30 | 1983–2002 |
| ROHM CO LTD | 5 | 2004–2016 |
| YOKURA HISANORI | 5 | 2012–2013 |
Locations
| Location | Patents | Span |
|---|---|---|
| Toyohashi, JP | 108 | 1983–2016 |
| Kyoto, JP | 5 | 2004–2016 |
| Kariya, JP | 5 | 2001–2011 |
| Goleta, California, US | 3 | 2010–2019 |
| Yamato, JP | 1 | 1991 |