Inventor
Samuel James BADER
Inventor
US
Overview
Patents· 4 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices40%
H10DInorganic electric semiconductor devices40%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1020%
PatentTitleYear
12,302,618Gallium nitride (GaN) selective epitaxial windows for integrated circuit technology202511,710,785RF high-electron-mobility transistors including group III-N stress neutral barrier layers with high breakdown voltages202311,522,080High-voltage p-channel FET based on III-nitride heterostructures202211,158,709Polarization-induced 2D hole gases for high-voltage p-channel transistors2021Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2021–2023Patents assigned to UNIV CORNELL (3)· patent assignee history
2021–2025Based in US· patent location history
2025Patents assigned to INTEL CORP (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| UNIV CORNELL | 3 | 2021–2023 |
| INTEL CORP | 1 | 2025 |
Locations
| Location | Patents | Span |
|---|---|---|
| US | 4 | 2021–2025 |