Inventor
Todd C. Roggenbauer
Inventor
Chandler, AZ, US
Overview
Patents· 20 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices58%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1016%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1010%
H01LSemiconductor devices6%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests6%
H10BElectronic memory devices3%
PatentTitleYear
9,397,233'High voltage deep trench capacitor'20169,142,607'Metal-insulator-metal capacitor'20158,188,543'Electronic device including a conductive structure extending through a buried insulating layer'20127,851,889'MOSFET device including a source with alternating P-type and N-type regions'20107,851,857'Dual current path LDMOSFET with graded PBL for ultra high voltage smart power applications'20107,820,519'Process of forming an electronic device including a conductive structure extending through a buried insulating layer'20107,777,257'Bipolar Schottky diode and method'20107,763,937'Variable resurf semiconductor device and method'20107,732,274'High voltage deep trench capacitor'20107,723,204'Semiconductor device with a multi-plate isolation structure'20107,550,804'Semiconductor device and method for forming the same'20097,511,319'Methods and apparatus for a stepped-drift MOSFET'20097,439,584'Structure and method for RESURF LDMOSFET with a current diverter'20087,436,025'Termination structures for super junction devices'20087,405,128'Dotted channel MOSFET and method'20087,309,638'Method of manufacturing a semiconductor component'20076,933,546'Semiconductor component'20056,930,027'Method of manufacturing a semiconductor component'20056,815,780'Semiconductor component with substrate injection protection structure'20046,734,524'Electronic component and method of manufacturing same'2004Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2004Patents assigned to MOTOROLA INC (2)· patent assignee history
2004–2016Based in Chandler, AZ, US· patent location history
2005–2015Patents assigned to FREESCALE SEMICONDUCTOR INC (17)· patent assignee history
2010–2015Based in Austin, TX, US· patent location history
2012–2016Patents assigned to ROGGENBAUER TODD C (3)· patent assignee history
2012–2016Patents assigned to BOSE AMITAVA (2)· patent assignee history
2012–2016Patents assigned to ZHU RONGHUA (2)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| FREESCALE SEMICONDUCTOR INC | 17 | 2005–2015 |
| ROGGENBAUER TODD Cself | 3 | 2012–2016 |
| BOSE AMITAVA | 2 | 2012–2016 |
| MOTOROLA INC | 2 | 2004 |
| ZHU RONGHUA | 2 | 2012–2016 |
Locations
| Location | Patents | Span |
|---|---|---|
| Chandler, AZ, US | 18 | 2004–2016 |
| Austin, Texas, US | 2 | 2010–2015 |