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Inventor

Yasutaka Sakata

Inventor
Tokyo, JP

Overview

25→
Patents
1994–2019
Patent span
Electricity
Primary field (CPC H)

Patents· 25 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H01Sprimary
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light44%
B82YSpecific uses or applications of nanostructures22%
G02BOptical elements, systems or apparatus10%
G02FOptical devices or arrangements for the control of light by modification of the optical properties of the media of the elements involved therein6%
H10HInorganic light-emitting semiconductor devices having potential barriers6%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests4%
G03BApparatus or arrangements for taking photographs or for projecting or viewing them2%
G06FElectric digital data processing2%
H04NPictorial communication, e.g. television2%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h102%
PatentTitleYear
10,303,306Projection display unit20197,920,613'Optical semiconductor device and method of manufacturing same'20117,633,986'Distributed feedback laser diode'20097,083,995'Optical semiconductor device and process for producing the same'20066,828,589'Optical semiconductor device and method for manufacturing the same'20046,707,839'Optical semiconductor device and process for producing the same'20046,399,404'Fabricating method of optical semiconductor device'20026,391,671'Method of producing an optical semiconductor device having a waveguide layer buried in an InP current blocking layer'20026,383,829'Optical semiconductor device and method of fabricating the same'20026,350,629'Optical semiconductor device having active layer and carrier recombination layer different from each other'20026,222,867'Optical semiconductor device having waveguide layers buried in an InP current blocking layer'20016,167,070'Optical semiconductor device and method of fabricating the same'20006,134,368'Optical semiconductor device with a current blocking structure and method for making the same'20006,100,543'Electro-absorption type semiconductor optical modulator having a quantum well structure'20006,036,771'Method of manufacturing optical semiconductor device'20005,913,107'Photosemiconductor device and method of fabricating the same'19995,891,748'Semiconductor optical waveguide and method of fabricating the same'19995,847,415'Light emitting device having current blocking structure'19985,790,580'Semiconductor optical integrated device'19985,770,466'Semiconductor optical integrated circuits and method for fabricating the same'19985,756,373'Method for fabricating optical semiconductor device'19985,678,935'Semiconductor optical waveguide and method of fabricating the same'19975,580,818'Fabrication process for semiconductor optical device'19965,565,693'Semiconductor optical integrated circuits'19965,284,791'Method of making tunable semiconductor laser'1994

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1994–2004Patents assigned to NEC CORP (20)· patent assignee history
1994–2006Based in Tokyo, JP· patent location history
2004Patents assigned to NEC COMPOUND CONDUCTOR DEVICES (1)· patent assignee history
2006–2009Patents assigned to NEC ELECTRONICS CORP (2)· patent assignee history
2009–2011Based in Kanagawa, JP· patent location history
2011Patents assigned to RENESAS ELECTRONIC CORP (1)· patent assignee history
2019Patents assigned to SONY CORP (1)· patent assignee history
2019Based in Chiba, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
NEC CORP201994–2004
NEC ELECTRONICS CORP22006–2009
NEC COMPOUND CONDUCTOR DEVICES12004
RENESAS ELECTRONIC CORP12011
SONY CORP12019
Locations
LocationPatentsSpan
Tokyo, JP221994–2006
Kanagawa, JP22009–2011
Chiba, JP12019