Inventor

Kosuke Okuyama

Inventor

Kodaira, JP

Overview

2010–2021

Patent span

Electricity

Primary field (CPC H)

Patents· 20 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Bprimary

H10BElectronic memory devices22%

G11CStatic stores20%

H01LSemiconductor devices20%

H10DInorganic electric semiconductor devices20%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h104%

C07CAcyclic or carbocyclic compounds3%

G02BOptical elements, systems or apparatus3%

C07DHeterocyclic compounds1%

C08FMacromolecular compounds obtained by reactions only involving carbon-to-carbon unsaturated bonds1%

C08GMacromolecular compounds obtained otherwise than by reactions only involving unsaturated carbon-to-carbon bonds1%

PatentTitleYear

10,954,443Polymerizable compound, polymerizable composition, polymer, and optically anisotropic product2021 10,934,246Mixture of polymerizable compound and method of producing the same2021 10,680,001Non-volatile semiconductor memory device2020 10,381,446Memory cell and non-volatile semiconductor storage device2019 10,373,967Memory cell, nonvolatile semiconductor storage device, and method for manufacturing nonvolatile semiconductor storage device2019 10,276,727Memory cell, semiconductor integrated circuit device, and method for manufacturing semiconductor integrated circuit device2019 10,263,002Anti-fuse memory and semiconductor storage device2019 10,102,911Non-volatile semiconductor storage device for reducing the number of memory cells arranged along a control to which a memory gate voltage is applied2018 10,074,660Semiconductor memory device2018 10,074,658Non-volatile SRAM memory cell and non-volatile semiconductor storage device2018 10,038,101Memory cell and non-volatile semiconductor storage device2018 9,842,650'Non-volatile SRAM memory cell, and non-volatile semiconductor storage device'2017 9,646,979'Non-volatile semiconductor storage device'2017 9,502,109'Non-volatile semiconductor storage device'2016 9,437,736'Non-volatile semiconductor memory device'2016 9,424,924'Non-volatile semiconductor memory device having depletion-type and enhancement-type channel regions'2016 9,318,196'Non-volatile semiconductor memory device'2016 8,530,958'Semiconductor device having split gate type, non-volatile memory cells and a method of manufacturing the same'2013 8,278,169'Semiconductor device and a method of manufacturing the same'2012 7,745,288'Semiconductor device and a method of manufacturing the same'2010

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2010–2021Based in Tokyo, JP· patent location history

2012–2013Patents assigned to HASHIMOTO TAKASHI (2)· patent assignee history

2012–2013Patents assigned to ISHII YASUSHI (2)· patent assignee history

2012–2013Patents assigned to KAWASHIMA YOSHIYUKI (2)· patent assignee history

2012–2013Patents assigned to OKUYAMA KOSUKE (2)· patent assignee history

2016–2020Patents assigned to FLOADIA CORP (15)· patent assignee history

2016–2020Based in Kodaira, JP· patent location history

2018Based in Koadira, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
FLOADIA CORP	15	2016–2020
HASHIMOTO TAKASHI	2	2012–2013
ISHII YASUSHI	2	2012–2013
KAWASHIMA YOSHIYUKI	2	2012–2013
OKUYAMA KOSUKEself	2	2012–2013

Locations

Location	Patents	Span
Kodaira, JP	11	2016–2020
Tokyo, JP	8	2010–2021
Koadira, JP	1	2018