Inventor
Ramanathan GANDHI
Inventor
US
Overview
Patents· 20 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices26%
H10DInorganic electric semiconductor devices26%
H10BElectronic memory devices22%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h109%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h109%
A61BDiagnosis3%
H10NElectric solid-state devices not otherwise provided for3%
G11CStatic stores1%
PatentTitleYear
12,218,236Devices including heterogeneous channels, and related memory devices, electronic systems, and methods202512,199,182Elevationally-extending transistors, devices comprising elevationally-extending transistors, and methods of forming a device comprising elevationally-extending transistors202512,199,183Memory devices including oxide semiconductor202512,170,324Transistors and arrays of elevationally-extending strings of memory cells202412,133,383Memory cell and method used in forming a memory cells202412,101,946Integrated assemblies comprising hydrogen diffused within two or more different semiconductor materials, and methods of forming integrated assemblies202411,996,456Assemblies which include ruthenium-containing conductive gates202411,908,913Semiconductor devices, transistors, and related methods for contacting metal oxide semiconductor devices202411,856,766Memory cell having programmable material comprising at least two regions comprising SiNx202311,832,454Integrated assemblies comprising hydrogen diffused within two or more different semiconductor materials, and methods of forming integrated assemblies202311,695,050Assemblies which include ruthenium-containing conductive gates202311,658,246Devices including vertical transistors, and related methods and electronic systems202311,538,919Transistors and arrays of elevationally-extending strings of memory cells202211,527,620Integrated assemblies having polycrystalline first semiconductor material adjacent conductively-doped second semiconductor material202211,515,417Transistors including heterogeneous channels202211,476,259Memory devices including void spaces between transistor features, and related semiconductor devices and electronic systems202211,437,521Methods of forming a semiconductor device202211,335,788Semiconductor devices, transistors, and related methods for contacting metal oxide semiconductor devices202211,329,133Integrated assemblies having semiconductor oxide channel material, and methods of forming integrated assemblies202211,152,509Elevationally-extending transistors, devices comprising elevationally-extending transistors, and methods of forming a device comprising elevationally-extending transistors2021Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2021–2025Patents assigned to MICRON TECHNOLOGY INC (18)· patent assignee history
2021–2025Based in US· patent location history
2022Patents assigned to Gandhi Ramanathan (1)· patent assignee history
2022Patents assigned to KARDA KAMAL M (1)· patent assignee history
2022Patents assigned to LI HONG (1)· patent assignee history
2022–2025Based in SG· patent location history
2024Patents assigned to LODESTAR LICENSING GROUP LLC (2)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| MICRON TECHNOLOGY INC | 18 | 2021–2025 |
| LODESTAR LICENSING GROUP LLC | 2 | 2024 |
| Gandhi Ramanathanself | 1 | 2022 |
| KARDA KAMAL M | 1 | 2022 |
| LI HONG | 1 | 2022 |
Locations
| Location | Patents | Span |
|---|---|---|
| US | 14 | 2021–2025 |
| SG | 6 | 2022–2025 |