Inventor
Shao-ming YU
Inventor
TW
Overview
Patents· 46 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Bprimary
H10BElectronic memory devices25%
H10NElectric solid-state devices not otherwise provided for25%
H01LSemiconductor devices19%
H10DInorganic electric semiconductor devices12%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h106%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h106%
G11CStatic stores5%
B82YSpecific uses or applications of nanostructures3%
PatentTitleYear
12,507,600—202512,471,507Memory device and fabrication method thereof202512,439,836Semiconductor memory devices with electrically isolated stacked bit lines and methods of manufacture202512,408,565Phase-change memory devices202512,376,363Gate stacks for stack-fin channel I/O devices and nanowire channel core devices202512,349,607Semiconductor devices with a double sided word line structure202512,324,364Memory device and operating method thereof202512,324,214Method and related apparatus for integrating electronic memory in an integrated chip202512,324,362Phase-change memory device and method202512,317,761Phase-change memory device and method for fabricating the same202512,317,529Semiconductor device202512,317,515Memory device and semiconductor die having the memory device202512,245,526Sidewall protection for PCRAM device202512,218,239Structure and method for providing line end extensions for fin-type active regions202512,199,169Structure and formation method of semiconductor device structure with nanowires202512,165,869Transistors comprising a vertical stack of elongated semiconductor features202412,156,485Memory cell and semiconductor device having the same202412,144,268Semiconductor structure and method of manufacture202412,142,529Semiconductor device including a gate-all-around field effect transistor202412,133,476Phase change memory device having tapered portion of the bottom memory layer202412,102,018Memory stacks and methods of forming the same202411,997,933Phase-change memory device and method202411,957,070Semiconductor device, memory cell and method of forming the same202411,925,127Phase-change memory device and method202411,856,876Semiconductor devices with a double sided word line structure and methods of manufacture202311,849,655Semiconductor memory devices with electrically isolated stacked bit lines and methods of manufacture202311,818,967Sidewall protection for PCRAM device202311,817,488Method and related apparatus for integrating electronic memory in an integrated chip202311,805,712Phase change memory device having tapered portion of the bottom memory layer202311,793,092Memory stacks and methods of forming the same202311,776,852Method of manufacturing a semiconductor device and a semiconductor device202311,721,761Structure and method for providing line end extensions for fin-type active regions202311,621,344Semiconductor device202311,588,106Method to effectively suppress heat dissipation in PCRAM devices202311,489,113Semiconductor device, memory cell and method of forming the same202211,411,181Phase-change memory device and method202211,411,180Phase-change memory device and method202211,404,635Memory stacks and methods of forming the same202211,387,102Stacked nanowire transistors202211,362,277Sidewall protection for PCRAM device202211,283,011Phase change memory device having tapered portion of the bottom memory layer202211,245,071Memory cell, method of forming the same, and semiconductor device having the same202211,239,365Structure and method for providing line end extensions for fin-type active regions202211,205,706Method of manufacturing a semiconductor device and a semiconductor device202111,152,481Gate stacks for stack-fin channel I/O devices and nanowire channel core devices202111,139,430Phase change random access memory and method of manufacturing2021Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2021–2025Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (44)· patent assignee history
2021–2025Based in TW· patent location history
2023–2025Patents assigned to MOSAID TECH INCORPORATED (2)· patent assignee history
2023Patents assigned to MOSAID TECHNOLOGIES INC (1)· patent assignee history
2025Patents assigned to TAIWAN SEMICONDCUTOR MFG COMPANY LTD (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TAIWAN SEMICONDUCTOR MFG CO LTD | 44 | 2021–2025 |
| MOSAID TECH INCORPORATED | 2 | 2023–2025 |
| MOSAID TECHNOLOGIES INC | 1 | 2023 |
| TAIWAN SEMICONDCUTOR MFG COMPANY LTD | 1 | 2025 |
Locations
| Location | Patents | Span |
|---|---|---|
| TW | 46 | 2021–2025 |