Inventor

Johannes Georg Laven

Inventor

Taufkirchen, DE

Overview

2014–2021

Patent span

Electricity

Primary field (CPC H)

Patents· 121 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H01Lprimary

H01LSemiconductor devices31%

H10DInorganic electric semiconductor devices31%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1018%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h108%

H03KPulse technique5%

H10NElectric solid-state devices not otherwise provided for2%

H02MApparatus for conversion between ac and ac, between ac and dc, or between dc and dc, and for use with mains or similar power supply systems1%

H10BElectronic memory devices1%

H01JElectric discharge tubes or discharge lamps1%

G01KMeasuring temperature1%

PatentTitleYear

11,133,303Semiconductor device and semiconductor arrangement comprising semiconductor devices2021 11,133,380Diode structure of a power semiconductor device2021 11,121,242Method of operating a semiconductor device having a desaturation channel structure2021 11,081,481Semiconductor device with an IGBT region and a non-switchable diode region2021 11,075,290Power semiconductor device having a cross-trench arrangement2021 11,018,051Power semiconductor device with reliably verifiable p-contact and method2021 10,978,560Power semiconductor device with dV/dt controllability and low gate charge2021 10,930,772IGBT having a barrier region2021 10,910,487Power semiconductor device having trench electrodes biased at three different electrical potentials, and method of manufacturing the same2021 10,903,344Semiconductor device with separation regions2021 10,886,909Electric assembly including an insulated gate bipolar transistor device and a wide-bandgap transistor device2021 10,854,739Method for producing IGBT with dV/dt controllability2020 10,840,362IGBT with dV/dt controllability2020 10,825,906Semiconductor device with transistor cells and enhancement cells with delayed control signals2020 10,734,507Method of operating a semiconductor device having a desaturation channel structure and related methods of manufacture2020 10,679,857Vertical transistor with trench gate insulator having varying thickness2020 10,679,855Method for producing a superjunction device2020 10,670,474Temperature sensor2020 10,651,165Semiconductor device having overload current carrying capability2020 10,644,496Semiconductor device with surge current protection2020 10,629,676Semiconductor device with cell trench structures and recessed contacts and method of manufacturing a semiconductor device2020 10,622,268Apparatus and method for ion implantation2020 10,615,039Semiconductor device having a device doping region of an electrical device arrangement2020 10,615,272Method for producing IGBT with dV/dt controllability2020 10,608,104Trench transistor device2020 10,580,653Method of forming a semiconductor device2020 10,529,838Semiconductor device having a variable carbon concentration2020 10,497,801Method of manufacturing a semiconductor device having an undulated profile of net doping in a drift zone2019 10,475,910Semiconductor device having an insulated gate bipolar transistor arrangement2019 10,475,909Electric assembly including a bipolar switching device and a wide bandgap transistor2019 10,461,739Transistor device2019 10,439,055IGBT with dV/dt controllability2019 10,424,645Semiconductor device, method for testing a semiconductor device and method for forming a semiconductor device2019 10,403,556Semiconductor device including a heat sink structure2019 10,404,250Transistor device2019 10,381,467Semiconductor device with separation regions2019 10,366,895Methods for forming a semiconductor device using tilted reactive ion beam2019 10,347,754Power semiconductor device with dV/dt controllability through select trench electrode biasing, and method of manufacturing the same2019 10,340,337Diode structure of a power semiconductor device2019 10,333,387Electric assembly including a semiconductor switching device and a clamping diode2019 10,325,809Methods for splitting semiconductor devices and semiconductor device2019 10,312,258Semiconductor device with buried cavities and dielectric support structures2019 10,304,952Power semiconductor device with dV/dt controllability and cross-trench arrangement2019 10,229,990Semiconductor device having a desaturation channel structure for desaturating a charge carrier concentration in an IGBT cell2019 10,217,837Method of manufacturing a semiconductor device having electrode trenches, isolated source zones and separation structures2019 10,211,325Semiconductor device including undulated profile of net doping in a drift zone2019 10,200,028Electric assembly including a reverse conducting switching device and a rectifying device2019 10,192,955Semiconductor device containing oxygen-related thermal donors2019 10,164,079Power semiconductor device2018 10,153,275Method of operating an IGBT having switchable and non-switchable diode cells2018 10,128,328Method of manufacturing semiconductor devices and semiconductor device containing hydrogen-related donors2018 10,109,489Method for producing a superjunction device2018 10,096,677Methods for forming a semiconductor device and a semiconductor device2018 10,096,531Semiconductor device with sensor potential in the active region2018 10,083,835Forming electrode trenches by using a directed ion beam and semiconductor device with trench electrode structures2018 10,075,158Method and drive circuit for driving a transistor2018 10,037,887Method for implanting ions into a semiconductor substrate and an implantation system2018 10,033,370Circuit and method for driving a power semiconductor switch2018 9,997,359Semiconductor device with rear-side insert structure2018 9,997,602Semiconductor device with transistor cells and enhancement cells with delayed control signals2018 9,972,704Method for forming a semiconductor device and a semiconductor device2018 9,972,689Semiconductor device having a surface with ripples2018 9,966,461Power semiconductor device2018 9,960,044Semiconductor device and methods for forming a semiconductor device2018 9,941,274Semiconductor device with a switchable and a non-switchable diode region2018 9,935,126Method of forming a semiconductor substrate with buried cavities and dielectric support structures2018 9,923,482'System and method for a power inverter with controllable clamps'2018 9,917,186'Semiconductor device with control structure including buried portions and method of manufacturing'2018 9,899,504'Power semiconductor transistor having increased bipolar amplification'2018 9,899,478'Desaturable semiconductor device with transistor cells and auxiliary cells'2018 9,876,100Semiconductor device and reverse conducting insulated gate bipolar transistor with isolated source zones2018 9,853,137Method for forming a semiconductor device and a semiconductor device2017 9,847,229Method for forming a semiconductor device and semiconductor device2017 9,837,506Method of manufacturing a semiconductor device having electrode trenches, isolated source zones and separation structures2017 9,825,131'Method of manufacturing semiconductor devices and semiconductor device containing oxygen-related thermal donors'2017 9,754,787'Method for treating a semiconductor wafer'2017 9,748,102'Semiconductor chip arrangement and method thereof'2017 9,741,795'IGBT having at least one first type transistor cell and reduced feedback capacitance'2017 9,728,627'Method for forming a semiconductor device and a semiconductor device'2017 9,711,641'Semiconductor device with cell trench structures and a contact structure'2017 9,691,887'Semiconductor device with variable resistive element'2017 9,679,892'Method of manufacturing a reverse blocking semiconductor device'2017 9,666,665'Semiconductor device with semiconductor mesa including a constriction'2017 9,666,663'Semiconductor device with cell trench structures and contacts and method of manufacturing a semiconductor device'2017 9,660,029'Semiconductor device having a positive temperature coefficient structure'2017 9,653,568'Method of manufacturing an insulated gate bipolar transistor with mesa sections between cell trench structures'2017 9,641,168'Controlling reverse conducting IGBT'2017 9,640,401'Method of manufacturing a semiconductor device having a rear-side insert structure'2017 9,634,086'Method of manufacturing semiconductor devices using light ion implantation and semiconductor device'2017 9,621,133'Method of operating a semiconductor device having an IGBT and desaturation channel structure'2017 9,613,805'Method for forming a semiconductor device'2017 9,576,944'Semiconductor devices with transistor cells and thermoresistive element'2017 9,570,577'Semiconductor device and insulated gate bipolar transistor with source zones formed in semiconductor mesas'2017 9,564,495'Semiconductor device with a semiconductor body containing hydrogen-related donors'2017 9,553,179'Semiconductor device and insulated gate bipolar transistor with barrier structure'2017 9,543,398'Semiconductor switching device including charge storage structure'2017 9,543,389'Semiconductor device with recombination region'2017 9,536,740'Increasing the doping efficiency during proton irradiation'2017 9,536,999'Semiconductor device with control structure including buried portions and method of manufacturing'2017 9,515,243'Temperature sensor'2016 9,515,066'Semiconductor device having an insulated gate bipolar transistor arrangement and a method for forming such a semiconductor device'2016 9,496,364'Field effect semiconductor component and methods for operating and producing it'2016 9,496,351'Semiconductor chip arrangement'2016 9,419,080'Semiconductor device with recombination region'2016 9,385,222'Semiconductor device with insert structure at a rear side and method of manufacturing'2016 9,385,228'Semiconductor device with cell trench structures and contacts and method of manufacturing a semiconductor device'2016 9,312,135'Method of manufacturing semiconductor devices including generating and annealing radiation-induced crystal defects'2016 9,263,271'Method for processing a semiconductor carrier, a semiconductor chip arrangement and a method for manufacturing a semiconductor device'2016 9,245,984'Reverse blocking semiconductor device, semiconductor device with local emitter efficiency modification and method of manufacturing a reverse blocking semiconductor device'2016 9,231,091'Semiconductor device and reverse conducting insulated gate bipolar transistor with isolated source zones'2016 9,166,027'IGBT with reduced feedback capacitance'2015 9,147,727'Semiconductor device and method for forming a semiconductor device'2015 9,105,679'Semiconductor device and insulated gate bipolar transistor with barrier regions'2015 9,105,487'Super junction semiconductor device'2015 9,093,568'Semiconductor diode'2015 9,082,629'Semiconductor device and method for forming a semiconductor device'2015 9,076,838'Insulated gate bipolar transistor with mesa sections between cell trench structures and method of manufacturing'2015 9,054,035'Increasing the doping efficiency during proton irradiation'2015 9,024,413'Semiconductor device with IGBT cell and desaturation channel structure'2015 8,895,453'Semiconductor device with an insulation layer having a varying thickness'2014 8,710,620'Method of manufacturing semiconductor devices using ion implantation'2014

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2014–2021Patents assigned to INFINEON TECHNOLOGIES AG (114)· patent assignee history

2014Patents assigned to FUCHS DIETER (1)· patent assignee history

2014–2021Based in Taufkirchen, DE· patent location history

2017–2020Patents assigned to INFINEON TECHNOLOGIES AUSTRIA AG (5)· patent assignee history

2018Based in Taufkrichen, DE· patent location history

2019Patents assigned to INFINEON TECHNOLOGIES DRESDEN GMBH (1)· patent assignee history

2021Patents assigned to INFINEON TECH DRESDEN GMBH & CO KG (2)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
INFINEON TECHNOLOGIES AG	114	2014–2021
INFINEON TECHNOLOGIES AUSTRIA AG	5	2017–2020
INFINEON TECH DRESDEN GMBH & CO KG	2	2021
FUCHS DIETER	1	2014
INFINEON TECHNOLOGIES DRESDEN GMBH	1	2019

Locations

Location	Patents	Span
Taufkirchen, DE	120	2014–2021
Taufkrichen, DE	1	2018