Inventor
Bernard Dieny
Inventor
Lans en Vercors, FR
Overview
Patents· 71 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
B82Yprimary
B82YSpecific uses or applications of nanostructures15%
H10NElectric solid-state devices not otherwise provided for15%
G11CStatic stores14%
H01FMagnets14%
G01RMeasuring electric variables9%
G11BInformation storage based on relative movement between record carrier and transducer9%
H10BElectronic memory devices7%
H01LSemiconductor devices5%
Y10TTechnical subjects covered by former us classification4%
H03BGeneration of oscillations, directly or by frequency-changing, by circuits employing active elements which operate in a non-switching manner2%
PatentTitleYear
10,978,234Magnetic stack, multilayer, tunnel junction, memory point and sensor comprising such a stack202110,930,841Magnetic tunnel junction with perpendicular shape anisotropy and minimised variability, memory point and logic element including the magnetic tunnel junction, method for manufacturing the magnetic tunnel junction202110,818,329Magnetic tunnel junction with perpendicular shape anisotropy and minimised variation of temperature memory point and logic element including the magnetic tunnel junction, method of manufacturing the magnetic tunnel junction202010,658,574Synthetic antiferromagnetic layer, magnetic tunnel junction and spintronic device using said synthetic antiferromagnetic layer202010,056,266Method for manufacturing a resistive device for a memory or logic circuit20189,835,696Magnetic field sensor for the detection of at least two magnetic field components including flux concentrators and magnetoresistive elements20179,583,695'Magnetic logic unit (MLU) cell and amplifier having a linear magnetic signal'20179,576,635'Thermally-assisted magnetic writing device'20179,508,920'Voltage-controlled magnetic device operating over a wide temperature range'20169,455,012'Magnetic device with spin polarisation'20169,431,608'Hybrid non-volatile memory device and method for manufacturing such a device'20169,336,846'MRAM element with low writing temperature'20169,331,268'MRAM element having improved data retention and low writing temperature'20169,324,936'Magnetic logic unit (MLU) cell and amplifier having a linear magnetic signal'20169,308,641'Process for fabricating a magnetic tweezer'20169,304,336'Magneto-optic assembly'20168,958,240'Magnetic device with thermally-assisted switching'20158,947,916'Thermally assisted magnetic writing device'20158,878,618'Spin transfer oscillator'20148,811,073'Magnetic device, and method for reading from and writing to said device'20148,767,453'Magnetic device with exchange bias'20148,686,818'Magnetic microparticle and method for manufacturing such a microparticle'20148,669,122'Method for producing a magnetic tunnel junction and magnetic tunnel junction thus obtained'20148,643,130'Magnetic stack and memory cell comprising such a stack'20148,624,590'Low noise magnetic field sensor using a lateral spin transfer'20148,542,072'Spin-valve or tunnel-junction radio-frequency oscillator, process for adjusting the frequency of such an oscillator and network consisting of a plurality of such oscillators'20138,513,944'Three-layer magnetic element, magnetic field sensor, magnetic memory and magnetic logic gate using such an element'20138,400,735'Magnetic recording medium'20138,329,049'Method of fabricating a nanostructure on a pre-etched substrate'20128,279,666'Spin polarised magnetic device'20128,247,093'Magnetic multilayer device, method for producing such a device, magnetic field sensor, magnetic memory and logic gate using such a device'20128,227,099'Radio-frequency oscillator with spin-polarised current'20128,208,295'Heat assisted magnetic write element'20128,102,703'Magnetic element with a fast spin transfer torque writing procedure'20128,068,316'Low noise magnetic field sensor'20118,063,709'Spin-transfer torque oscillator'2011RE042619'Magnetic tunnel junction magnetic device, memory and writing and reading methods using said device'20117,957,181'Magnetic tunnel junction magnetic memory'20117,944,736'Magnetoresistive device'20117,898,833'Magnetic element with thermally-assisted writing'20117,830,640'Spin valve magnetoresistive device with conductive-magnetic material bridges in a dielectric or semiconductor layer alternatively of magnetic material'20107,821,818'Magnetoresistive tunnel junction magnetic device and its application to MRAM'20107,813,202'Thin-film magnetic device with strong spin polarization perpendicular to the plane of the layers, magnetic tunnel junction and spin valve using such a device'20107,772,659'Magnetic device having perpendicular magnetization and interaction compensating interlayer'20107,767,255'Information storage medium with laterally magnetised dot array, and process for producing said medium'20107,626,221'Magnetoresistive random access memory with high current density'20097,480,175'Magnetic tunnel junction device and writing/reading for said device'20097,453,672'Spin valve magnetoresistive device with conductive-magnetic material bridges in a dielectric or semiconducting layer alternatively of magnetic material'20087,411,817'Magnetic memory with a magnetic tunnel junction written in a thermally assisted manner, and method for writing the same'20087,138,193'Data storage medium with laterally magnetized pad and method for making same'20067,006,337'Multilayered structures comprising magnetic nano-oxide layers for current perpendicular to plane GMR heads'20066,999,286'Multilayered structures comprising magnetic nano-oxide layers for current perpendicular to plane GMR heads'20066,987,651'Multilayered structures comprising magnetic nano-oxide layers for current perpendicular to plane GMR heads'20066,985,337'Multilayered structures comprising magnetic nano-oxide layers for current perpendicular to plane GMR heads'20066,950,335'Magnetic tunnel junction magnetic device, memory and writing and reading methods using said device'20056,888,703'Multilayered structures comprising magnetic nano-oxide layers for current perpindicular to plane GMR heads'20056,882,509'GMR configuration with enhanced spin filtering'20056,770,382'GMR configuration with enhanced spin filtering'20046,603,677'Three-layered stacked magnetic spin polarization device with memory'20036,532,164'Magnetic spin polarization and magnetization rotation device with memory and writing process, using such a device'20036,462,641'Magnetoresistor with tunnel effect and magnetic sensor using same'20026,013,365'Multi-layer structure and sensor and manufacturing process'20005,677,625'Giant magnetoresistance, production process and application to a magnetic sensor'19975,635,835'Self biased multilayer magnetoresistance sensor'19975,598,308'Magnetoresistive sensor having multilayer thin film structure'19975,574,605'Antiferromagnetic exchange coupling in magnetoresistive spin valve sensors'19965,341,261'Magnetoresistive sensor having multilayer thin film structure'19945,301,079'Current biased magnetoresistive spin valve sensor'19945,287,238'Dual spin valve magnetoresistive sensor'19945,206,590'Magnetoresistive sensor based on the spin valve effect'19935,159,513'Magnetoresistive sensor based on the spin valve effect'1992Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1992–1997Patents assigned to IBM (7)· patent assignee history
1992–1993Based in San Jose, CA, US· patent location history
1994–2021Based in Grenoble, FR· patent location history
1997–2021Patents assigned to COMMISSARIAT ENERGIE ATOMIQUE (46)· patent assignee history
1997–2000Based in Seyssinet-Pariset, FR· patent location history
2002–2020Based in Lans en Vercors, FR· patent location history
2004–2006Patents assigned to HEADWAY TECHNOLOGIES INC (7)· patent assignee history
2008–2021Patents assigned to CENTRE NAT RECH SCIENT (19)· patent assignee history
2011–2016Patents assigned to DIENY BERNARD (20)· patent assignee history
2013–2017Based in Villard de Lans, FR· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| COMMISSARIAT ENERGIE ATOMIQUE | 46 | 1997–2021 |
| DIENY BERNARDself | 20 | 2011–2016 |
| CENTRE NAT RECH SCIENT | 19 | 2008–2021 |
| HEADWAY TECHNOLOGIES INC | 7 | 2004–2006 |
| IBM | 7 | 1992–1997 |
Locations
| Location | Patents | Span |
|---|---|---|
| Lans en Vercors, FR | 54 | 2002–2020 |
| Grenoble, FR | 8 | 1994–2021 |
| Villard de Lans, FR | 3 | 2013–2017 |
| Seyssinet-Pariset, FR | 3 | 1997–2000 |
| San Jose, California, US | 2 | 1992–1993 |