Inventor
CHAO-YANG CHEN
Inventor
TW
Overview
Patents· 7 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Bprimary
H10BElectronic memory devices30%
G11CStatic stores25%
H10NElectric solid-state devices not otherwise provided for20%
H01LSemiconductor devices10%
H10DInorganic electric semiconductor devices10%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h105%
PatentTitleYear
12,439,609Process technique for embedded memory202512,396,158Memory device and method of manufacturing the same202512,389,814High electron affinity dielectric layer to improve cycling202511,696,521High electron affinity dielectric layer to improve cycling202311,631,810Bottom electrode structure in memory device202311,594,632Wakeup-free ferroelectric memory device202311,574,684Dynamic random access memory and programming method therefor2023Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2023–2025Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (4)· patent assignee history
2023Patents assigned to NS POLES TECH CORP (1)· patent assignee history
2023–2025Based in TW· patent location history
2025Patents assigned to HEFEI RELIANCE MEMORY LTD (1)· patent assignee history
2025Patents assigned to MEMORIST CO LTD (1)· patent assignee history
2025Based in CN· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TAIWAN SEMICONDUCTOR MFG CO LTD | 4 | 2023–2025 |
| HEFEI RELIANCE MEMORY LTD | 1 | 2025 |
| MEMORIST CO LTD | 1 | 2025 |
| NS POLES TECH CORP | 1 | 2023 |
Locations
| Location | Patents | Span |
|---|---|---|
| TW | 6 | 2023–2025 |
| CN | 1 | 2025 |