Inventor
Till Schloesser
Inventor
Dresden, DE
Overview
Patents· 100 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices31%
H01LSemiconductor devices21%
H10BElectronic memory devices16%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1010%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h109%
G11CStatic stores6%
H03KPulse technique1%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests1%
B81CProcesses or apparatus specially adapted for the manufacture or treatment of microstructural devices or systems1%
B82YSpecific uses or applications of nanostructures1%
PatentTitleYear
11,018,244Lateral trench transistor device202110,903,079Method for forming complementary doped semiconductor regions in a semiconductor body202110,868,146Method for producing a semiconductor device having a superjunction structure, first and second trenches and a trench structure in the second trench202010,700,061Semiconductor device comprising a first transistor and a second transistor202010,629,690Semiconductor device comprising a transistor including a first field plate and a second field plate202010,582,580Switch comprising a field effect transistor and integrated circuit202010,468,405Electric circuit including a semiconductor device with a first transistor, a second transistor and a control circuit201910,381,475Semiconductor device comprising a transistor cell including a source contact in a trench, method for manufacturing the semiconductor device and integrated circuit201910,381,477Power transistor having perpendicularly-arranged field plates and method of manufacturing the same201910,355,087Semiconductor device including a transistor with a gate dielectric having a variable thickness201910,246,325MEMS device and method for manufacturing a MEMS device201910,205,016Method for manufacturing an integrated circuit including a lateral trench transistor and a logic circuit element201910,170,615Semiconductor device including a lateral transistor201910,109,734Semiconductor device comprising a transistor201810,002,959Semiconductor device comprising a temperature sensor, temperature sensor and method of manufacturing a semiconductor device comprising a temperature sensor20189,941,403Semiconductor device and method for manufacturing a semiconductor device20189,917,163'Semiconductor device comprising a field effect transistor and method of manufacturing the semiconductor device'20189,893,178'Semiconductor device having a channel separation trench'20189,859,418'Semiconductor device comprising a transistor cell including a source contact in a trench, method for manufacturing the semiconductor device and integrated circuit'20189,852,945Method of manufacturing a semiconductor device having a cell field portion and a contact area20179,825,170'Semiconductor device comprising a transistor array and a termination region and method of manufacturing such a semiconductor device'20179,825,148'Semiconductor device comprising an isolation trench'20179,799,762'Semiconductor device and method of manufacturing a semiconductor device'20179,748,378'Semiconductor device, integrated circuit and method of manufacturing a semiconductor device'20179,673,320'Transistor with improved avalanche breakdown behavior'20179,660,055'Method of manufacturing a semiconductor device with lateral FET cells and field plates'20179,661,707'Method for manufacturing a semiconductor device using tilted ion implantation processes, semiconductor device and integrated circuit'20179,620,637'Semiconductor device comprising a gate electrode connected to a source terminal'20179,614,033'Semiconductor device including an isolation structure and method of manufacturing a semiconductor device'20179,614,032'Semiconductor device, integrated circuit and method for manufacturing the semiconductor device'20179,608,070'Semiconductor device comprising a field effect transistor and method of manufacturing the semiconductor device'20179,564,521'Semiconductor device comprising ferroelectric elements and fast high-K metal gate transistors'20179,530,884'Method of manufacturing a semiconductor device and semiconductor device'20169,484,457'Vertical floating body storage transistors formed in bulk devices and having buried sense and word lines'20169,450,085'Semiconductor device and method for producing a semiconductor device'20169,401,399'Semiconductor device'20169,397,092'Semiconductor device in a semiconductor substrate and method of manufacturing a semiconductor device in a semiconductor substrate'20169,349,842'Methods of forming semiconductor devices comprising ferroelectric elements and fast high-K metal gate transistors'20169,349,834'Method of manufacturing a semiconductor device'20169,324,829'Method of forming a trench electrode device with wider and narrower regions'20169,324,854'Semiconductor device comprising self-aligned contact elements and a replacement gate electrode structure'20169,306,058'Integrated circuit and method of manufacturing an integrated circuit'20169,287,404'Semiconductor device and method of manufacturing a semiconductor device with lateral FET cells and field plates'20169,231,100'Semiconductor device and method for manufacturing a semiconductor device'20169,162,868'MEMS device'20159,129,820'Integrated circuit and method of manufacturing an integrated circuit'20159,123,801'Semiconductor device, integrated circuit and method of manufacturing a semiconductor device'20159,054,181'Semiconductor device, integrated circuit and method of manufacturing a semiconductor device'20159,034,753'Method of forming conductive contacts on a semiconductor device with embedded memory and the resulting device'20158,994,113'Semiconductor device and method of manufacturing a semiconductor device'20158,963,244'Semiconductor device, integrated circuit and method of manufacturing a semiconductor device'20158,860,136'Semiconductor device and method of manufacturing a semiconductor device'20148,853,810'Integrated circuits that include deep trench capacitors and methods for their fabrication'20148,835,245'Semiconductor device comprising self-aligned contact elements'20148,790,975'Semiconductor device comprising a capacitor formed in the metallization system based on dummy metal features'20148,722,523'Semiconductor device comprising self-aligned contact elements and a replacement gate electrode structure'20148,716,077'Replacement gate compatible eDRAM transistor with recessed channel'20148,697,557'Method of removing gate cap materials while protecting active area'20148,609,457'Semiconductor device with DRAM bit lines made from same material as gate electrodes in non-memory regions of the device, and methods of making same'20138,598,655'Semiconductor device and method for manufacturing a semiconductor device'20138,455,960'High performance HKMG stack for gate first integration'20138,294,188'4 F2 memory cell array'20128,222,103'Semiconductor device with embedded low-K metallization'20127,956,387'Transistor and memory cell array'20117,863,149'Method for fabricating a capacitor'20117,829,892'Integrated circuit including a gate electrode'20107,772,631'Method for fabricating a memory cell arrangement with a folded bit line arrangement and corresponding memory cell arrangement with a folded bit line arrangement'20107,763,513'Integrated circuit device and method of manufacture'20107,759,704'Memory cell array comprising wiggled bit lines'20107,738,279'Integrated circuit and method of operating an integrated circuit'20107,729,154'Integrated circuit with buried control line structures'20107,727,837'Method of producing an integrated circuit having a capacitor with a supporting layer'20107,687,343'Storage capacitor, a memory device and a method of manufacturing the same'20107,642,572'Integrated circuit having a memory cell array and method of forming an integrated circuit'20107,635,893'Transistor, memory cell array and method of manufacturing a transistor'20097,605,032'Method for producing a trench transistor and trench transistor'20097,539,039'Integrated circuit having a resistive switching device'20097,476,920'6F2 access transistor arrangement and semiconductor memory device'20097,471,547'Memory cell array'20087,449,739'Storage capacitor for semiconductor memory cells and method of manufacturing a storage capacitor'20087,442,609'Method of manufacturing a transistor and a method of forming a memory device with isolation trenches'20087,341,875'Semiconductor memory device with a capacitor formed therein and a method for forming the same'20087,301,192'Dram cell pair and dram memory cell array'20077,301,799'Memory cell array'20077,180,115'DRAM cell structure with tunnel barrier'20077,141,845'DRAM cell array and memory cell arrangement having vertical memory cells and methods for fabricating the same'20067,139,184'Memory cell array'20067,132,333'Transistor, memory cell array and method of manufacturing a transistor'20067,109,544'Architecture for vertical transistor cells and transistor-controlled memory cells'20067,034,408'Memory device and method of manufacturing a memory device'20066,932,916'Semiconductor substrate with trenches of varying depth'20056,930,324'Device architecture and process for improved vertical memory arrays'20056,930,325'Test structure for improved vertical memory arrays'20056,807,089'Method for operating an MRAM semiconductor memory configuration'20046,798,014'Semiconductor memory cell and semiconductor component as well as manufacturing methods therefore'20046,707,098'Electronic device and method for fabricating an electronic device'20046,573,137'Single sided buried strap'20036,492,221'DRAM cell arrangement'20026,349,052'DRAM cell arrangement and method for fabricating it'20025,977,589'DRAM cell arrangement and method for the production thereof'1999Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1999–2021Based in Munich, DE· patent location history
2002–2020Patents assigned to INFINEON TECHNOLOGIES AG (57)· patent assignee history
2004–2017Based in Dresden, DE· patent location history
2009–2012Patents assigned to QIMONDA AG (14)· patent assignee history
2012–2017Patents assigned to GLOBALFOUNDRIES INC (14)· patent assignee history
2012–2017Patents assigned to SCHLOESSER TILL (14)· patent assignee history
2012–2016Patents assigned to BAARS PETER (11)· patent assignee history
2016–2019Based in München, DE· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| INFINEON TECHNOLOGIES AG | 57 | 2002–2020 |
| GLOBALFOUNDRIES INC | 14 | 2012–2017 |
| QIMONDA AG | 14 | 2009–2012 |
| SCHLOESSER TILLself | 14 | 2012–2017 |
| BAARS PETER | 11 | 2012–2016 |
Locations
| Location | Patents | Span |
|---|---|---|
| Dresden, DE | 48 | 2004–2017 |
| Munich, DE | 46 | 1999–2021 |
| München, DE | 6 | 2016–2019 |