Inventor
Byeong-In Choe
Inventor
Yongin-si, KR
Overview
Patents· 22 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
G11Cprimary
G11CStatic stores40%
H10BElectronic memory devices24%
H10DInorganic electric semiconductor devices20%
H01LSemiconductor devices11%
G06FElectric digital data processing2%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h102%
PatentTitleYear
9,991,275Semiconductor memory device20189,564,237'Nonvolatile memory device and read method thereof'20179,558,834'Nonvolatile memory device and an erasing method thereof'20179,548,123'Operating methods of nonvolatile memory devices including a ground select transistor and first and second dummy memory cells'20179,224,493'Nonvolatile memory device and read method thereof'20159,136,005'Erasing methods of three-dimensional nonvolatile memory devices with cell strings and dummy word lines'20158,916,926'Nonvolatile memory device and method of making the same'20148,877,591'Methods of manufacturing vertical structure nonvolatile memory devices'20148,804,417'Nonvolatile memory device including dummy memory cell and program method thereof'20148,772,857'Vertical memory devices and methods of manufacturing the same'20148,737,129'Nonvolatile memory device and read method thereof'20148,724,394'Nonvolatile memory device and operating method thereof'20148,699,274'Flash memory device and operating method for concurrently applying different bias voltages to dummy memory cells and regular memory cells during erasure'20148,644,074'Nonvolatile memory device, programming method thereof and memory system including the same'20148,599,622'Charge trap flash memory device and an erasing method thereof'20138,576,629'Operating method of nonvolatile memory device'20138,513,729'Vertical structure nonvolatile memory devices'20138,446,773'Memory system and programming method thereof'20138,315,103'Flash memory device and operating method for concurrently applying different bias voltages to dummy memory cells and regular memory cells during erasure'20128,059,466'Memory system and programming method thereof'20117,867,883'Methods of fabricating non-volatile memory devices'20117,812,375'Non-volatile memory device and method of fabricating the same'2010Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2010–2018Patents assigned to SAMSUNG ELECTRONICS CO LTD (21)· patent assignee history
2010–2018Based in Yongin-si, KR· patent location history
2011–2017Patents assigned to CHOE BYEONG-IN (16)· patent assignee history
2011–2017Patents assigned to CHOI JUNGDAL (5)· patent assignee history
2011–2017Patents assigned to LEE CHANGHYUN (5)· patent assignee history
2011Based in Gyeonggi-do, KR· patent location history
2012–2014Based in Yongin, KR· patent location history
2013–2014Patents assigned to CHANG SUNG-IL (4)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SAMSUNG ELECTRONICS CO LTD | 21 | 2010–2018 |
| CHOE BYEONG-INself | 16 | 2011–2017 |
| CHOI JUNGDAL | 5 | 2011–2017 |
| LEE CHANGHYUN | 5 | 2011–2017 |
| CHANG SUNG-IL | 4 | 2013–2014 |
Locations
| Location | Patents | Span |
|---|---|---|
| Yongin-si, KR | 19 | 2010–2018 |
| Yongin, KR | 2 | 2012–2014 |
| Gyeonggi-do, KR | 1 | 2011 |