Inventor

Robert D. Burnham

Inventor

Los Altos Hills, CA, US

Overview

77→

Patents

1976–1992

Patent span

Electricity

Primary field (CPC H)

Patents· 77 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H01Sprimary

H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light42%

B82YSpecific uses or applications of nanostructures11%

H10HInorganic light-emitting semiconductor devices having potential barriers11%

Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests7%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h105%

G02FOptical devices or arrangements for the control of light by modification of the optical properties of the media of the elements involved therein4%

G02BOptical elements, systems or apparatus3%

G06KGraphical data reading3%

H04BTransmission3%

H10DInorganic electric semiconductor devices3%

PatentTitleYear

5,130,771'Diamond composite heat sink for use with semiconductor devices'1992 5,008,737'Diamond composite heat sink for use with semiconductor devices'1991 RE033274'Selective disordering of well structures by laser annealing'1990 4,901,330'Optically pumped laser'1990 4,882,734'Quantum well heterostructure lasers with low current density threshold and higher T.sub.O values'1989 4,875,216'Buried waveguide window regions for improved performance semiconductor lasers and other opto-electronic applications'1989 4,871,690'Semiconductor structures utilizing semiconductor support means selectively pretreated with migratory defects'1989 4,857,971'(IV).sub.x (III-V).sub.1-x alloys formed in situ in III-V heterostructures'1989 4,839,899'Wavelength tuning of multiple quantum well (MQW) heterostructure lasers'1989 4,831,630'Phased-locked window lasers'1989 4,831,629'Incoherent, optically coupled laser arrays with increased spectral width'1989 4,824,798'Method of introducing impurity species into a semiconductor structure from a deposited source'1989 4,803,691'Lateral superradiance suppressing diode laser bar'1989 4,799,223'Split contact phased array lasers'1989 4,786,918'Incoherent, optically uncoupled laser arrays for electro-optic line modulators and line printers'1988 4,771,010'Energy beam induced layer disordering (EBILD)'1988 4,730,331'Superluminescent LED source'1988 4,727,556'Semiconductor lasers fabricated from impurity induced disordering'1988 4,727,555'Wavelength tuned quantum well lasers'1988 4,727,557'Phased array semiconductor lasers fabricated from impurity induced disordering'1988 4,706,255'Phased array semiconductor laser with preferred emission in the fundamental supermode'1987 4,694,459'Hybrid gain/index guided semiconductor lasers and array lasers'1987 4,675,709'Quantized layered structures with adjusted indirect bandgap transitions'1987 4,671,830'Method of controlling the modeling of the well energy band profile by interdiffusion'1987 4,654,090'Selective disordering of well structures by laser annealing'1987 4,638,334'Electro-optic line printer with super luminescent LED source'1987 4,624,000'Phased array semiconductor lasers with preferred emission in a single lobe'1986 4,606,032'Astable optical multi-vibrator'1986 4,594,718'Combination index/gain guided semiconductor lasers'1986 4,589,115'Wavelength tuning of quantum well heterostructure lasers using an external grating'1986 4,585,491'Wavelength tuning of quantum well lasers by thermal annealing'1986 4,555,785'Optical repeater integrated lasers'1985 4,546,480'Injection lasers with quantum size effect transparent waveguiding'1985 4,462,658'Optical scanner'1984 4,461,007'Injection lasers with short active regions'1984 4,450,567'Optical repeater integrated lasers'1984 4,448,797'Masking techniques in chemical vapor deposition'1984 4,447,904'Semiconductor devices with nonplanar characteristics produced in chemical vapor deposition'1984 4,433,417'Nonplanar substrate injection lasers grown in vapor phase epitaxy'1984 4,371,966'Heterostructure lasers with combination active strip and passive waveguide strip'1983 4,369,524'Single component transceiver device for linear fiber optical network'1983 4,360,921'Monolithic laser scanning device'1982 4,358,851'Fiber optic laser device and light emitter utilizing the device'1982 4,349,906'Optically controlled integrated current diode lasers'1982 4,347,611'Large optical cavity (LOC) mesa laser'1982 4,335,461'Injection lasers with lateral spatial thickness variations (LSTV) in the active layer'1982 4,328,469'High output power injection lasers'1982 4,317,085'Channeled mesa laser'1982 4,316,156'Optical repeater integrated lasers'1982 4,309,670'Transverse light emitting electroluminescent devices'1982 4,302,729'Channeled substrate laser with distributed feedback'1981 4,293,826'Hybrid semiconductor laser/detectors'1981 4,280,106'Striped substrate planar laser'1981 4,280,108'Transverse junction array laser'1981 4,277,762'Mode control of heterojunction injection lasers and method of fabrication'1981 4,255,717'Monolithic multi-emitting laser device'1981 4,251,780'Stripe offset geometry in injection lasers to achieve transverse mode control'1981 4,249,142'Enhancement of lowest order mode operation in nonplanar DH injection lasers'1981 4,219,785'Optical beam scanning by phase delays'1980 4,217,561'Beam scanning using radiation pattern distortion'1980 4,185,256'Mode control of heterojunction injection lasers and method of fabrication'1980 4,184,170'Light emitting diode'1980 4,132,960'Single longitudinal mode GaAs/GaAlAs double heterostructure laser'1979 4,112,389'Diode laser with ring reflector'1978 4,111,521'Semiconductor light reflector/light transmitter'1978 4,099,999'Method of making etched-striped substrate planar laser'1978 4,077,019'Transverse mode control in double-heterostructure lasers utilizing substrate loss'1978 4,063,189'Leaky wave diode laser'1977 4,045,749'Corrugation coupled twin guide laser'1977 4,033,796'Method of making buried-heterostructure diode injection laser'1977 4,023,993'Method of making an electrically pumped solid-state distributed feedback laser'1977 4,006,432'Integrated grating output coupler in diode lasers'1977 3,983,509'Distributed feedback diode laser'1976 3,978,428'Buried-heterostructure diode injection laser'1976 3,970,958'Electrically pumped, solid-state distributed feedback laser with particular grating spacing'1976 3,969,686'Beam collimation using multiple coupled elements'1976 3,954,534'Method of forming light emitting diode array with dome geometry'1976

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1976–1989Patents assigned to XEROX CORP (72)· patent assignee history

1976–1986Based in Los Altos Hills, CA, US· patent location history

1976–1982Based in Los Altos, CA, US· patent location history

1982–1989Based in Palo Alto, CA, US· patent location history

1988–1992Based in Wheaton, IL, US· patent location history

1989Patents assigned to SPECTRA DIODE LAB (1)· patent assignee history

1990–1992Patents assigned to AMOCO CORP (3)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
XEROX CORP	72	1976–1989
AMOCO CORP	3	1990–1992
SPECTRA DIODE LAB	1	1989

Locations

Location	Patents	Span
Los Altos Hills, California, US	35	1976–1986
Palo Alto, California, US	21	1982–1989
Wheaton, Illinois, US	13	1988–1992
Los Altos, California, US	8	1976–1982