Inventor

Thomas R. Anthony

Inventor

Schenectady, NY, US

Overview

1976–2012

Patent span

Electricity

Primary field (CPC H)

Patents· 161 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Pprimary

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1021%

C30BSingle-crystal growth14%

H10DInorganic electric semiconductor devices10%

Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests10%

Y10TTechnical subjects covered by former us classification8%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h108%

C23CCoating metallic material7%

B01JChemical or physical processes, e.g. catalysis or colloid chemistry3%

B21CManufacture of metal sheets, wire, rods, tubes, profiles or like semi-manufactured products otherwise than by rolling2%

C01BNon-metallic elements2%

PatentTitleYear

8,216,370'Method for reducing defect concentration in crystals'2012 7,323,156'High pressure/high temperature production of colorless and fancy-colored diamonds'2008 7,241,434'High pressure and high temperature production of diamonds'2007 7,175,704'Method for reducing defect concentrations in crystals'2007 6,908,674'Jadeite and its production'2005 6,887,144'Surface impurity-enriched diamond and method of making'2005 6,692,714'High pressure/high temperature production of colorless and fancy-colored diamonds'2004 6,377,340'Method of detection of natural diamonds that have been processed at high pressure and high temperatures'2002 6,322,891'Thermally-diffused boron diamond and its production'2001 6,281,681'Magnetic resonance imaging with interleaved Fibonacci spiral scanning'2001 5,869,133'Method of producing articles by chemical vapor deposition and the support mandrels used therein'1999 5,817,036'System and method for treatment of a prostate with a phase fresnel probe'1998 5,672,395'Method for enhancing the toughness of CVD diamond'1997 5,636,545'Composite diamond wire die'1997 5,634,370'Composite diamond wire die'1997 5,634,369'Composite diamond wire die'1997 5,551,277'Annular diamond bodies'1996 5,540,904'Isotopically-pure carbon-12 or carbon-13 polycrystalline diamond possessing enhanced thermal conductivity'1996 5,523,121'Smooth surface CVD diamond films and method for producing same'1996 5,494,753'Articles having thermal conductors of graphite'1996 5,490,840'Targeted thermal release of drug-polymer conjugates'1996 5,478,513'CVD diamond growth on hydride-forming metal substrates'1995 5,468,934'Apparatus for annealing diamond water jet mixing tubes'1995 5,465,603'Optically improved diamond wire die'1995 5,464,665'Microwave RF, or AC/DC discharge assisted flame deposition of CVD diamond'1995 5,451,430'Method for enhancing the toughness of CVD diamond'1995 5,439,492'Fine grain diamond workpieces'1995 5,437,728'Apparatus and method for chemical vapor deposition of diamond'1995 5,437,891'Chemical vapor deposition of polycrystalline diamond with <100> orientation and <100> growth facets'1995 5,424,096'HF-CVD method for forming diamond'1995 5,419,798'Suppression of graphite formation during laser etching of diamond'1995 5,419,276'Single-crystal diamond of very high thermal conductivity'1995 5,377,522'Diamond wire die with positioned opening'1995 5,368,031'Magnetic resonance surgery using heat waves produced with a laser fiber'1994 5,363,556'Water jet mixing tubes used in water jet cutting devices and method of preparation thereof'1994 5,363,687'Diamond wire die'1994 5,361,621'Multiple grained diamond wire die'1994 5,360,479'Isotopically pure single crystal epitaxial diamond films and their preparation'1994 5,349,922'Free standing diamond sheet and method and apparatus for making same'1994 5,334,280'Suppression of graphite formation during laser etching of diamond'1994 5,310,447'Single-crystal diamond of very high thermal conductivity'1994 5,306,348'Metal growth accelerator shell for the chemical vaporization deposition of diamond'1994 5,302,231'CVD diamond by alternating chemical reactions'1994 5,300,313'Method for determining thickness of chemical vapor deposited layers'1994 5,291,890'Magnetic resonance surgery using heat waves produced with focussed ultrasound'1994 5,273,731'Substantially transparent free standing diamond films'1993 5,264,071'Free standing diamond sheet and method and apparatus for making same'1993 5,256,206'CVD diamond for coating twist drills'1993 5,190,823'Method for improving adhesion of synthetic diamond coatings to substrates'1993 5,175,929'Method for producing articles by chemical vapor deposition'1993 5,110,579'Transparent diamond films and method for making'1992 5,096,736'CVD diamond for coating twist drills'1992 5,022,801'CVD diamond coated twist drills'1991 4,981,818'Polycrystalline CVD diamond substrate for single crystal epitaxial growth of semiconductors'1991 4,970,986'Apparatus for synthetic diamond deposition including spring-tensioned filaments'1990 4,958,592'Resistance heater for diamond production by CVD'1990 4,953,499'Apparatus for synthetic diamond deposition including curved filaments and substrate cooling means'1990 4,720,308'Method for producing high-aspect ratio hollow diffused regions in a semiconductor body and diode produced thereby'1988 4,695,760'Self-aligned double grids for vacuum tubes'1987 4,660,063'Immersion type ISFET'1987 4,647,476'Insulating glass body with electrical feedthroughs and method of preparation'1987 4,628,174'Forming electrical conductors in long microdiameter holes'1986 4,609,932'Nonplanar ion-sensitive field-effect transistor devices'1986 4,597,002'Flow through ISFET and method of forming'1986 4,595,428'Method for producing high-aspect ratio hollow diffused regions in a semiconductor body'1986 4,589,190'Fabrication of drilled and diffused junction field-effect transistors'1986 4,585,493'Grain-driven zone-melting of silicon films on insulating substrates'1986 4,570,173'High-aspect-ratio hollow diffused regions in a semiconductor body'1986 4,549,912'Anode and cathode connections for the practice of electromigration'1985 4,547,836'Insulating glass body with electrical feedthroughs and method of preparation'1985 4,527,183'Drilled, diffused radiation detector'1985 4,499,655'Method for making alignment-enhancing feed-through conductors for stackable silicon-on-sapphire'1985 4,473,737'Reverse laser drilling'1984 4,471,369'Robotic pressure imagers'1984 4,437,109'Silicon-on-sapphire body with conductive paths therethrough'1984 4,396,467'Periodic reverse current pulsing to form uniformly sized feed through conductors'1983 4,394,712'Alignment-enhancing feed-through conductors for stackable silicon-on-sapphire wafers'1983 4,381,598'Method of making anode and cathode connections for electromigration'1983 4,377,423'Liquid metal inclusion migration by means of an electrical potential gradient'1983 4,368,106'Implantation of electrical feed-through conductors'1983 4,294,631'Surface corrosion inhibition of zirconium alloys by laser surface .beta.-quenching'1981 4,279,667'Zirconium alloys having an integral .beta.-quenched corrosion-resistant surface region'1981 4,239,556'Sensitized stainless steel having integral normalized surface region'1980 4,233,934'Guard ring for TGZM processing'1980 4,224,504'Apparatus for practicing temperature gradient zone melting'1980 4,224,594'Deep diode magnetoresistor'1980 4,221,956'Apparatus for practising temperature gradient zone melting'1980 4,207,670'Method for making a solid state neuron'1980 4,198,247'Sealant films for materials having high intrinsic vapor pressure'1980 4,184,897'Droplet migration doping using carrier droplets'1980 4,178,192'Promotion of surface film stability during initiation of thermal migration'1979 4,171,990'Migration of uniform fine lines for bodies of semiconductor materials having a (100) planar orientation of a major surface'1979 4,170,491'Near-surface thermal gradient enhancement with opaque coatings'1979 4,170,490'Process for thermal gradient zone melting utilizing a beveled wafer edge'1979 4,170,496'Beveled wafer for thermal gradient zone melting utilizing a beveled wafer edge'1979 4,168,992'Process for thermal gradient zone melting utilizing a beveled wafer and a beveled guard ring'1979 4,168,991'Method for making a deep diode magnetoresistor'1979 4,163,983'Solid state neuron'1979 4,160,679'Migration of fine liquid wires by thermal gradient zone melting through doped surfaces'1979 4,159,216'Enhanced line stability by alloying of deposition'1979 4,159,215'Droplet migration doping using reactive carriers and dopants'1979 4,159,213'Straight, uniform thermalmigration of fine lines'1979 4,157,564'Deep diode devices'1979 4,141,757'Uniform thermomigration utilizing sample movement'1979 4,135,027'Semiconductor element embodying an optical coating to enhance thermal gradient zone melting processing thereof'1979 4,108,685'Semiconductor device manufacture'1978 4,101,759'Semiconductor body heater'1978 4,097,226'Furnace for practising temperature gradient zone melting'1978 4,091,257'Deep diode devices and method and apparatus'1978 4,087,239'Apparatus for imparting combined centrosymmetric and noncentro-symmetric rotation to semiconductor bodies'1978 4,082,572'Process for making anisotropic resistor for electrical feed throughs'1978 4,081,293'Uniform thermomigration utilizing sample movement'1978 4,076,559'Temperature gradient zone melting through an oxide layer'1978 4,075,038'Deep diode devices and method and apparatus'1978 4,071,378'Process of making a deep diode solid state transformer'1978 4,068,814'Semiconductor body holder'1978 4,063,965'Making deep power diodes'1977 4,063,966'Method for forming spaced electrically isolated regions in a body of semiconductor material'1977 4,040,171'Deep diode zeners'1977 4,040,868'Semiconductor device manufacture'1977 4,040,869'High voltage deep diode power semiconductor switch'1977 4,035,199'Process for thermal gradient zone melting utilizing a guard ring radiation coating'1977 4,033,786'Temperature gradient zone melting utilizing selective radiation coatings'1977 4,032,364'Deep diode silicon controlled rectifier'1977 4,031,607'Minority carrier isolation barriers for semiconductor devices'1977 4,032,955'Deep diode transistor'1977 4,032,960'Anisotropic resistor for electrical feed throughs'1977 4,032,965'Semiconductor varistor embodying a lamellar structure'1977 4,024,420'Deep diode atomic battery'1977 4,024,565'Deep diode solid state transformer'1977 4,024,566'Deep diode device'1977 4,021,269'Post diffusion after temperature gradient zone melting'1977 4,012,236'Uniform thermal migration utilizing noncentro-symmetric and secondary sample rotation'1977 4,010,534'Process for making a deep diode atomic battery'1977 4,011,582'Deep power diode'1977 4,006,040'Semiconductor device manufacture'1977 3,998,662'Migration of fine lines for bodies of semiconductor materials having a (100) planar orientation of a major surface'1976 3,998,653'Method for cleaning semiconductor devices'1976 3,998,661'Uniform migration of an annular shaped molten zone through a solid body'1976 3,990,093'Deep buried layers for semiconductor devices'1976 3,988,764'Deep diode solid state inductor coil'1976 3,988,760'Deep diode bilateral semiconductor switch'1976 3,988,770'Deep finger diodes'1976 3,988,769'High voltage diodes'1976 3,988,767'High voltage deep diode power semiconductor switch'1976 3,988,757'Deep diode zeners'1976 3,988,766'Multiple P-N junction formation with an alloy droplet'1976 3,988,762'Minority carrier isolation barriers for semiconductor devices'1976 3,988,768'Deep diode silicon controlled rectifier'1976 3,982,270'Deep diode varactors'1976 3,982,268'Deep diode lead throughs'1976 3,979,820'Deep diode lead throughs'1976 3,979,230'Method of making isolation grids in bodies of semiconductor material'1976 3,977,910'Deep finger diodes'1976 3,975,213'High voltage diodes'1976 3,972,741'Multiple p-n junction formation with an alloy droplet'1976 3,972,742'Deep power diode'1976 3,956,023'Process for making a deep power diode by thermal migration of dopant'1976 3,956,024'Process for making a semiconductor varistor embodying a lamellar structure'1976 3,956,026'Making a deep diode varactor by thermal migration'1976 3,936,319'Solar cell'1976

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1976–2002Patents assigned to GEN ELECTRIC (154)· patent assignee history

1976–2012Based in Schenectady, NY, US· patent location history

1994–2002Based in Niskayuna, NY, US· patent location history

2005–2007Patents assigned to DIAMOND INNOVATIONS INC (3)· patent assignee history

2007–2008Patents assigned to BELLATAIRE INTERNATIONAL LLC (2)· patent assignee history

2012Patents assigned to ANTHONY THOMAS RICHARD (1)· patent assignee history

2012Patents assigned to ARTHUR STEPHEN DALEY (1)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
GEN ELECTRIC	154	1976–2002
DIAMOND INNOVATIONS INC	3	2005–2007
BELLATAIRE INTERNATIONAL LLC	2	2007–2008
ANTHONY THOMAS RICHARDself	1	2012
ARTHUR STEPHEN DALEY	1	2012

Locations

Location	Patents	Span
Schenectady, New York, US	153	1976–2012
Niskayuna, New York, US	8	1994–2002