Inventor
Won-tai Ki
Inventor
Kyungki-do, KR
Overview
Patents· 11 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
G03Fprimary
G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices28%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1019%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests14%
H01JElectric discharge tubes or discharge lamps11%
B82YSpecific uses or applications of nanostructures8%
G09FDisplaying3%
G09GArrangements or circuits for control of indicating devices using static means to present variable information3%
H01LSemiconductor devices3%
H04NPictorial communication, e.g. television3%
H10KOrganic electric solid-state devices3%
PatentTitleYear
10,997,881Display device including a crack detection line20217,393,615'Mask for use in measuring flare, method of manufacturing the mask, method of identifying flare-affected region on wafer, and method of designing new mask to correct for flare'20087,185,312'Exposure method for correcting line width variation in a photomask'20077,129,024'Electron beam lithography method'20067,065,735'Method for making an OPC mask and an OPC mask manufactured using the same'20066,835,507'Mask for use in measuring flare, method of manufacturing the mask, method of identifying flare-affected region on wafer, and method of designing new mask to correct for flare'20046,775,815'Exposure method for correcting line width variation in a photomask'20046,689,520'Exposure method for correcting dimension variation in electron beam lithography'20046,617,084'Electron beam mask having dummy stripe(s) and lithographic method of manufacturing a semiconductor device using an E-beam mask having at least one defective pattern'20036,475,684'Method of correcting line width variation due to loading effect caused during etching of a photomask and recording medium formed according to the method'20026,291,119'Method of compensating for pattern dimension variation caused by re-scattered electron beam in electron beam lithography and recording medium in which the method is recorded'2001Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2001–2008Patents assigned to SAMSUNG ELECTRONICS CO LTD (10)· patent assignee history
2002Based in Seoul, KR· patent location history
2003Based in Yongin, KR· patent location history
2004–2007Based in Kyungki-do, KR· patent location history
2004–2008Based in Suwon-si, KR· patent location history
2021Patents assigned to SAMSUNG DISPLAY CO LTD (1)· patent assignee history
2021Based in Yongin-si, KR· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SAMSUNG ELECTRONICS CO LTD | 10 | 2001–2008 |
| SAMSUNG DISPLAY CO LTD | 1 | 2021 |
Locations
| Location | Patents | Span |
|---|---|---|
| Kyungki-do, KR | 4 | 2004–2007 |
| Suwon-si, KR | 3 | 2004–2008 |
| Yongin-si, KR | 1 | 2021 |
| Yongin, KR | 1 | 2003 |
| Seoul, KR | 1 | 2002 |