Inventor
Dmitry Poplavskyy
Inventor
San Jose, CA, US
Overview
Patents· 20 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Fprimary
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation23%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution23%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1020%
Y02PClimate change mitigation technologies in the production or processing of goods16%
H01LSemiconductor devices13%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests5%
PatentTitleYear
10,367,116Method of reducing sodium concentration in a transparent conductive oxide layer of a semiconductor device201910,062,801Method of reducing sodium concentration in a transparent conductive oxide layer of a semiconductor device20189,496,136'Group IV nanoparticle fluid'20169,306,087'Method for manufacturing a photovoltaic cell with a locally diffused rear side'20169,246,029'Method for manufacturing an interdigitated back contact solar cell'20169,059,341'Method for manufacturing an interdigitated back contact solar cell'20159,048,374'Method for manufacturing an interdigitated back contact solar cell'20158,895,348'Methods of forming a high efficiency solar cell with a localized back surface field'20148,420,517'Methods of forming a multi-doped junction with silicon-containing particles'20138,394,658'Methods of using a silicon nanoparticle fluid to control in situ a set of dopant diffusion profiles'20138,361,834'Methods of forming a low resistance silicon-metal contact'20138,273,669'Method of forming a passivated densified nanoparticle thin film on a substrate'20128,163,587'Methods of using a silicon nanoparticle fluid to control in situ a set of dopant diffusion profiles'20128,138,070'Methods of using a set of silicon nanoparticle fluids to control in situ a set of dopant diffusion profiles'20127,998,359'Methods of etching silicon-containing films on silicon substrates'20117,923,368'Junction formation on wafer substrates using group IV nanoparticles'20117,910,393'Methods for forming a dual-doped emitter on a silicon substrate with a sub-critical shear thinning nanoparticle fluid'20117,851,336'Method of forming a passivated densified nanoparticle thin film on a substrate'20107,704,866'Methods for forming composite nanoparticle-metal metallization contacts on a substrate'20107,572,740'Methods for optimizing thin film formation with reactive gases'2009Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2009–2016Patents assigned to INNOVALIGHT INC (14)· patent assignee history
2009–2019Based in San Jose, CA, US· patent location history
2012–2016Patents assigned to POPLAVSKYY DMITRY (8)· patent assignee history
2012–2016Patents assigned to SCARDERA GIUSEPPE (5)· patent assignee history
2012–2016Patents assigned to KELMAN MAXIM (4)· patent assignee history
2015–2016Patents assigned to DU PONT (4)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| INNOVALIGHT INC | 14 | 2009–2016 |
| POPLAVSKYY DMITRYself | 8 | 2012–2016 |
| SCARDERA GIUSEPPE | 5 | 2012–2016 |
| DU PONT | 4 | 2015–2016 |
| KELMAN MAXIM | 4 | 2012–2016 |
Locations
| Location | Patents | Span |
|---|---|---|
| San Jose, California, US | 20 | 2009–2019 |