LexDanaLexDanabeta
Inventor

Fumio Kawamura

Inventor
Hitachi, JP

Overview

74→
Patents
1982–2017
Patent span
Chemistry
Primary field (CPC C)

Patents· 74 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

C30Bprimary
C30BSingle-crystal growth23%
Y10TTechnical subjects covered by former us classification10%
B41MPrinting, duplicating, marking, or copying processes7%
G21FProtection against x-radiation, gamma radiation, corpuscular radiation or particle bombardment7%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests7%
H10HInorganic light-emitting semiconductor devices having potential barriers5%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h105%
B01JChemical or physical processes, e.g. catalysis or colloid chemistry3%
G03GElectrography2%
H05BElectric heating2%
PatentTitleYear
9,624,604'Method for synthesizing hexagonal tungsten nitride, and hexagonal tungsten nitride'20179,017,479'Nitride single crystal manufacturing apparatus'20158,999,059'Process for producing a nitride single crystal and apparatus therefor'20158,657,955'Melt composition for gallium nitride single crystal growth and method for growing gallium nitride single crystal'20148,574,361'Group-III element nitride crystal producing method and group-III element nitride crystal'20138,506,705'Method for manufacturing nitride single crystal'20138,486,190'Process for producing single crystal'20138,361,222'Method for producing group III nitride-based compound semiconductor'20138,231,729'Apparatus for producing nitride single crystal'20128,227,324'Method for producing group III nitride-based compound semiconductor crystal'20128,216,365'Method for producing a semiconductor crystal'20128,187,507'GaN crystal producing method, GaN crystal, GaN crystal substrate, semiconductor device and GaN crystal producing apparatus'20128,123,856'Method and apparatus for producing group III nitride based compound semiconductor'20128,084,281'Semiconductor substrate, electronic device, optical device, and production methods therefor'20118,038,794'Group III-nitride crystal, manufacturing method thereof, group III-nitride crystal substrate and semiconductor device'20118,025,728'Method for manufacturing single crystal of nitride'20117,959,729'Method for producing group-III-element nitride single crystals and apparatus used therein'20117,905,958'Group III-nitride semiconductor crystal and manufacturing method thereof, and group III-nitride semiconductor device'20117,842,133'Single crystal growing method'20107,833,347'Process and apparatus for producing nitride single crystal'20107,815,733'Method for producing hexagonal boron nitride single crystal and hexagonal boron nitride single crystal'20107,794,539'Method for producing III group element nitride crystal, production apparatus for use therein, and semiconductor element produced thereby'20107,754,012'Apparatus for production of crystal of group III element nitride and process for producing crystal of group III element nitride'20107,708,833'Crystal growing apparatus'20107,580,651'Image forming apparatus and method of controlling energy saving mode'20097,507,292'Method for producing group III element nitride single crystal and group III element nitride transparent single crystal prepared thereby'20097,459,023'Method for producing semiconductor crystal'20087,435,295'Method for producing compound single crystal and production apparatus for use therein'20087,419,545'Method for producing silicon carbide (SiC) single crystal and silicon carbide (SiC) single crystal obtained by such method'20087,381,268'Apparatus for production of crystal of group III element nitride and process for producing crystal of group III element nitride'20087,361,220'Method of manufacturing group III nitride single crystal, device used for the method and group III nitride single crystal obtained by the method'20087,309,534'Group III nitride crystals usable as group III nitride substrate, method of manufacturing the same, and semiconductor device including the same'20077,288,152'Method of manufacturing GaN crystals and GaN crystal substrate, GaN crystals and GaN crystal substrate obtained by the method, and semiconductor device including the same'20077,288,151'Method of manufacturing group-III nitride crystal'20077,255,742'Method of manufacturing Group III nitride crystals, method of manufacturing semiconductor substrate, Group III nitride crystals, semiconductor substrate, and electronic device'20077,176,115'Method of manufacturing Group III nitride substrate and semiconductor device'20077,172,741'Method for reprocessing spent nuclear fuel'20077,125,801'Method of manufacturing Group III nitride crystal substrate, etchant used in the method, Group III nitride crystal substrate, and semiconductor device including the same'20066,878,360'Carbon fibrous matter, production device of carbon fibrous matter, production method of carbon fibrous matter and deposit prevention device for carbon fibrous matter'20056,794,334'Thermo reversible recording medium, member having information memorizing part, thermo reversible recording label, method of and apparatus for image processing'20046,261,992'Reversible thermosensitive recording material and recording method and apparatus therefor'20016,154,243'Reversible thermal recording method and apparatus therefor'20006,090,748'Reversible thermosensitive recording material and recording method and recording apparatus therefor'20006,090,192'Reversible thermosensitive coloring composition and reversible thermosensitive recording medium using same'20005,981,115'Reversible thermosensitive recording material'19995,981,429'Reversible thermosensitive recording medium'19995,955,225'Reversible thermosensitive coloring composition and reversible thermosensitive recording medium using same'19995,891,823'Reversible thermosensitive recording medium'19995,868,821'Thermally reversible color forming composition and thermally reversible recording medium using the thermally reversible color forming composition'19995,826,154'Copier'19985,583,088'Reversible thermosensitive recording medium'19965,467,444'Method of three-dimensional display of object-oriented figure information and system thereof'19955,448,696'Map information system capable of displaying layout information'19955,153,073'Electroluminescent device'19925,118,986'Electroluminescent device'19925,093,210'Electroluminescent device'19925,084,235'Direct cycle-type atomic power plant with means for suppressing transfer from a liquid phase to a vapor phase of radioactive nitrogen oxides'19924,931,222'Process for treating radioactive liquid waste containing sodium borate and solidified radioactive waste'19904,722,043'Control system with changable time-shared execution of ladder and non-ladder programs'19884,708,822'Method of solidifying radioactive solid waste'19874,654,172'Method for processing radioactive waste resin'19874,648,990'Solidified radioactive wastes and process for producing the same'19874,636,335'Method of disposing radioactive ion exchange resin'19874,587,232'Inorganic adsorbent and process for production thereof'19864,581,162'Process for solidifying radioactive waste'19864,578,325'Power storage system using sodium-sulfur batteries'19864,543,085'Apparatus for separating solid matters'19854,539,282'Electrophotographic photoconductive elements'19854,524,153'Method of and system for regenerating powdery ion-exchange resin'19854,505,851'Process for solidifying radioactive waste pellets'19854,481,089'Method for decontaminating metals contaminated with radioactive substances'19844,448,711'Process for producing zeolite adsorbent and process for treating radioactive liquid waste with the zeolite adsorbent'19844,395,386'Apparatus for isotope exchange reaction'19834,361,505'Process for treating radioactive waste'1982

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1982–1995Patents assigned to HITACHI LTD (18)· patent assignee history
1982–1992Based in Hitachi, JP· patent location history
1985–2000Based in Shizuoka, JP· patent location history
1992–2009Patents assigned to RICOH KK (16)· patent assignee history
2006–2015Patents assigned to MORI YUSUKE (14)· patent assignee history
2006–2011Based in Minoh, JP· patent location history
2008–2015Patents assigned to NGK INSULATORS LTD (16)· patent assignee history
2008–2015Patents assigned to UNIV OSAKA (15)· patent assignee history
2008–2013Based in Osaka, JP· patent location history
2009–2015Based in Suita, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
HITACHI LTD181982–1995
NGK INSULATORS LTD162008–2015
RICOH KK161992–2009
UNIV OSAKA152008–2015
MORI YUSUKE142006–2015
Locations
LocationPatentsSpan
Hitachi, JP161982–1992
Suita, JP152009–2015
Shizuoka, JP131985–2000
Minoh, JP92006–2011
Osaka, JP82008–2013