Inventor
Chang-Kuei Huang
Inventor
Camas, WA, US
Overview
Patents· 5 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1045%
C23CCoating metallic material27%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests18%
H10DInorganic electric semiconductor devices9%
PatentTitleYear
7,229,521'Etching system using a deionized water adding device'20076,365,015'Method for depositing high density plasma chemical vapor deposition oxide in high aspect ratio gaps'20026,251,795'Method for depositing high density plasma chemical vapor deposition oxide with improved topography'20016,129,819'Method for depositing high density plasma chemical vapor deposition oxide in high aspect ratio gaps'20004,981,811'Process for fabricating low defect polysilicon'1991Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1991Patents assigned to AT & T BELL LAB (1)· patent assignee history
1991Based in Wyomissing, PA, US· patent location history
2000Patents assigned to WAFERTECH LLC (1)· patent assignee history
2000–2002Based in Camas, WA, US· patent location history
2001Patents assigned to WAFERTECH L L C (1)· patent assignee history
2002Patents assigned to WAFERTECH INC (1)· patent assignee history
2007Patents assigned to INNOLUX DISPLAY CORP (1)· patent assignee history
2007Based in Miaoli, TW· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| AT & T BELL LAB | 1 | 1991 |
| INNOLUX DISPLAY CORP | 1 | 2007 |
| WAFERTECH INC | 1 | 2002 |
| WAFERTECH L L C | 1 | 2001 |
| WAFERTECH LLC | 1 | 2000 |
Locations
| Location | Patents | Span |
|---|---|---|
| Camas, Washington, US | 3 | 2000–2002 |
| Miaoli, TW | 1 | 2007 |
| Wyomissing, Pennsylvania, US | 1 | 1991 |