Inventor
Tjin Tjin Tjoa
Inventor
Singapore, SG
Overview
Patents· 4 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices50%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1017%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1017%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests17%
PatentTitleYear
7,541,234'Methods of fabricating integrated circuit transistors by simultaneously removing a photoresist layer and a carbon-containing layer on different active areas'20096,709,918'Method for making a metal-insulator-metal (MIM) capacitor and metal resistor for a copper back-end-of-line (BEOL) technology'20046,316,304'Method of forming spacers of multiple widths'20016,277,716'Method of reduce gate oxide damage by using a multi-step etch process with a predictable premature endpoint system'2001Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2001–2009Patents assigned to CHARTERED SEMICONDUCTOR MFG (4)· patent assignee history
2001–2009Based in Singapore, SG· patent location history
2009Patents assigned to INFINEON TECHNOLOGIES AG (1)· patent assignee history
2009Patents assigned to SAMSUNG ELECTRONICS CO LTD (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| CHARTERED SEMICONDUCTOR MFG | 4 | 2001–2009 |
| INFINEON TECHNOLOGIES AG | 1 | 2009 |
| SAMSUNG ELECTRONICS CO LTD | 1 | 2009 |
Locations
| Location | Patents | Span |
|---|---|---|
| Singapore, SG | 4 | 2001–2009 |