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Inventor

Robert K. Lowry

Inventor
Melbourne Beach, FL, US

Overview

19→
Patents
1981–2013
Patent span
Electricity
Primary field (CPC H)

Patents· 19 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

Y10Sprimary
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests24%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1022%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1019%
B23KSoldering or unsoldering8%
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light8%
H10DInorganic electric semiconductor devices5%
C09KMaterials for miscellaneous applications, not provided for elsewhere3%
G11CStatic stores3%
H10BElectronic memory devices3%
Y10TTechnical subjects covered by former us classification3%
PatentTitleYear
RE043980'Laser decapsulation method'2013RE042193'Laser decapsulation method'20117,316,936'Laser decapsulation method'20087,166,186'Laser decapsulation apparatus and method'20076,909,146'Bonded wafer with metal silicidation'20056,457,506'Decapsulating method and apparatus for integrated circuit packages'20026,335,208'Laser decapsulation method'20026,130,172'Radiation hardened dielectric for EEPROM'20006,054,012'Decapsulating method and apparatus for integrated circuit packages'20005,849,627'Bonded wafer processing with oxidative bonding'19985,808,353'Radiation hardened dielectric for EEPROM'19985,728,624'Bonded wafer processing'19985,569,620'Bonded wafer processing with metal silicidation'19965,517,047'Bonded wafer processing'19965,387,555'Bonded wafer processing with metal silicidation'19955,362,667'Bonded wafer processing'19944,859,280'Method of etching silicon by enhancing silicon etching capability of alkali hydroxide through the addition of positive valence impurity ions'19894,781,853'Method of enhancing silicon etching capability of alkali hydroxide through the addition of positive valence impurity ions'19884,272,986'Method and means for measuring moisture content of hermetic semiconductor devices'1981

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1981–1998Patents assigned to HARRIS CORP (10)· patent assignee history
1981–2008Based in Melbourne Beach, FL, US· patent location history
2000–2013Patents assigned to INTERSIL CORP (5)· patent assignee history
2002–2007Patents assigned to INTERSIL INC (3)· patent assignee history
2008Patents assigned to INTERSIL AMERICANS INC (1)· patent assignee history
2011–2013Based in Indialantic, FL, US· patent location history
2013Patents assigned to LOWRY ROBERT K (1)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
HARRIS CORP101981–1998
INTERSIL CORP52000–2013
INTERSIL INC32002–2007
INTERSIL AMERICANS INC12008
LOWRY ROBERT Kself12013
Locations
LocationPatentsSpan
Melbourne Beach, Florida, US171981–2008
Indialantic, Florida, US22011–2013