Inventor
Hoon Choi
Inventor
Seoul, KR
Overview
Patents· 19 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
G11Cprimary
G11CStatic stores52%
G06FElectric digital data processing11%
H10BElectronic memory devices11%
H04NPictorial communication, e.g. television7%
Y02DClimate change mitigation technologies in information and communication technologies [ict], i.e. information and communication technologies aiming at the reduction of their own energy use7%
G05FSystems for regulating electric or magnetic variables4%
G09GArrangements or circuits for control of indicating devices using static means to present variable information4%
H02MApparatus for conversion between ac and ac, between ac and dc, or between dc and dc, and for use with mains or similar power supply systems4%
PatentTitleYear
7,778,267'Bus system'20106,560,679'Method and apparatus for reducing power consumption by skipping second accesses to previously accessed cache lines'20036,345,003'Redundancy circuits for integrated circuit memory devices including repair controlling circuits and enable controlling circuits'20026,317,351'Associative cache memory capable of reconfiguring a K-way and N-set cache memory into a M-unit, K-way and N/M-set cache memory'20015,940,343'Memory sub-word line driver operated by unboosted voltage'19995,933,382'Semiconductor memory device including a redundant memory cell circuit which can reduce a peak current generated in a redundant fuse box'19995,901,055'Internal boosted voltage generator of semiconductor memory device'19995,610,549'Voltage boosting circuit of a semiconductor memory circuit'19975,521,871'Voltage boosting circuit of a semiconductor memory circuit'19965,418,746'Write signal input buffer for a semiconductor memory device'19955,374,839'Semiconductor memory device'19945,299,161'Method and device for improving performance of a parallel write test of a semiconductor memory device'19945,197,031'Method for writing data in testing memory device and circuit for testing memory device'19935,161,012'Multi-screen generation circuit'19925,140,553'Flash writing circuit for writing test data in dynamic random access memory (DRAM) devices'19925,107,254'Address producing circuit for zoom function'19925,046,049'Method of flash write for testing a RAM'19915,034,625'Semiconductor substrate bias circuit'19915,016,106'Image signal processing circuit for producing multiple pictures on a common display screen'1991Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1991–2010Patents assigned to SAMSUNG ELECTRONICS CO LTD (19)· patent assignee history
1991–2010Based in Seoul, KR· patent location history
1991–1993Based in Taegu, KR· patent location history
1994Based in Suwon-si, KR· patent location history
1995–1997Based in Kyungki-do, KR· patent location history
1999Based in Guri, KR· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SAMSUNG ELECTRONICS CO LTD | 19 | 1991–2010 |
Locations
| Location | Patents | Span |
|---|---|---|
| Seoul, KR | 9 | 1991–2010 |
| Taegu, KR | 4 | 1991–1993 |
| Kyungki-do, KR | 3 | 1995–1997 |
| Guri, KR | 1 | 1999 |
| Suwon-si, KR | 1 | 1994 |