Inventor

Takafumi Ueda

Inventor

Jyoetsu, JP

Overview

2001–2021

Patent span

Chemistry

Primary field (CPC C)

Patents· 46 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

G03Fprimary

G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices28%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1014%

C09DCoating compositions, e.g. paints, varnishes or lacquers13%

C08GMacromolecular compounds obtained otherwise than by reactions only involving unsaturated carbon-to-carbon bonds11%

C08LCompositions of macromolecular compounds9%

H01LSemiconductor devices3%

C07FAcyclic, carbocyclic or heterocyclic compounds containing elements other than carbon, hydrogen, halogen, oxygen, nitrogen, sulfur, selenium or tellurium3%

F01DNon-positive displacement machines or engines, e.g. steam turbines3%

C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients2%

F02BInternal-combustion piston engines2%

PatentTitleYear

11,020,530Syringe barrel for pre-filled syringe, syringe system, and pre-filled syringe2021 10,309,248Variable geometry system turbocharger2019 10,280,836Variable nozzle unit and variable geometry system turbocharger2019 10,030,576Variable geometry system turbocharger2018 9,702,264'Variable nozzle unit and variable geometry system turbocharger'2017 9,627,204'Composition for forming a coating type BPSG film, substrate formed a film by said composition, and patterning process using said composition'2017 9,377,690'Compositon for forming metal oxide-containing film and patterning process'2016 9,188,866'Composition for forming titanium-containing resist underlayer film and patterning process'2015 9,176,382'Composition for forming titanium-containing resist underlayer film and patterning process'2015 9,075,309'Silicon-containing surface modifier, resist underlayer film composition containing this, and patterning process'2015 9,069,247'Silicon-containing surface modifier, resist lower layer film-forming composition containing the same, and patterning process'2015 9,005,883'Patterning process'2015 8,999,625'Silicon-containing antireflective coatings including non-polymeric silsesquioxanes'2015 8,951,711'Patterning process and composition for forming silicon-containing film usable therefor'2015 8,951,917'Composition for forming resist underlayer film and patterning process using the same'2015 8,945,820'Silicon-containing resist underlayer film-forming composition and patterning process'2015 8,932,953'Composition for forming a silicon-containing resist underlayer film and patterning process using the same'2015 8,859,189'Patterning process'2014 8,852,844'Composition for forming silicon-containing film, silicon-containing film-formed substrate and patterning process'2014 8,835,102'Patterning process and composition for forming silicon-containing film usable therefor'2014 8,759,220'Patterning process'2014 8,715,913'Silicon-containing resist underlayer film-forming composition and patterning process'2014 8,697,330'Composition for forming a silicon-containing antireflection film, substrate having the silicon-containing antireflection film from the composition and patterning process using the same'2014 8,652,267'Coated-type silicon-containing film stripping process'2014 8,501,386'Silicon-containing film-forming composition, silicon-containing film-formed substrate, and patterning process'2013 8,343,711'Patterning process'2013 8,329,376'Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method'2012 8,043,610'Freeze-dried composition of inactivated virus envelope with membrane fusion activity'2011 8,029,974'Metal oxide-containing film-forming composition, metal oxide-containing film-formed substrate, and patterning process'2011 8,026,038'Metal oxide-containing film-forming composition, metal oxide-containing film, metal oxide-containing film-bearing substrate, and patterning method'2011 7,910,283'Silicon-containing antireflective coating forming composition, silicon-containing antireflective coating, substrate processing intermediate, and substrate processing method'2011 7,868,407'Substrate comprising a lower silicone resin film and an upper silicone resin film'2011 7,855,043'Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method'2010 7,678,529'Silicon-containing film forming composition, silicon-containing film serving as etching mask, substrate processing intermediate, and substrate processing method'2010 7,642,043'Rework process for photoresist film'2010 7,638,268'Rework process for photoresist film'2009 7,585,613'Antireflection film composition, substrate, and patterning process'2009 7,541,134'Antireflective film-forming composition, method for manufacturing the same, and antireflective film and pattern formation method using the same'2009 7,485,690'Sacrificial film-forming composition, patterning process, sacrificial film and removal method'2009 7,417,104'Porous film-forming composition, patterning process, and porous sacrificial film'2008 7,385,021'Sacrificial film-forming composition, patterning process, sacrificial film and removal method'2008 7,163,778'Anti-reflection film material and a substrate having an anti-reflection film and a method for forming a pattern'2007 6,590,010'Organosiloxane polymer, photo-curable resin composition, patterning process, and substrate protective coating'2003 6,451,496'Heat-curable photosensitive compositions'2002 6,440,646'Positive resist composition suitable for lift-off technique and pattern forming method'2002 6,210,855'Positive resist composition suitable for lift-off technique and pattern forming method'2001

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2001–2017Patents assigned to SHINETSU CHEMICAL CO (38)· patent assignee history

2001–2002Based in Usui-gun, JP· patent location history

2007–2011Based in Niigata, JP· patent location history

2008–2015Based in Joetsu-shi, JP· patent location history

2009–2015Patents assigned to IBM (4)· patent assignee history

2011–2017Based in Jyoetsu, JP· patent location history

2012–2015Patents assigned to OGIHARA TSUTOMU (10)· patent assignee history

2012–2015Patents assigned to UEDA TAKAFUMI (10)· patent assignee history

2013–2015Patents assigned to YANO TOSHIHARU (9)· patent assignee history

2017–2019Based in Tokyo, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
SHINETSU CHEMICAL CO	38	2001–2017
OGIHARA TSUTOMU	10	2012–2015
UEDA TAKAFUMIself	10	2012–2015
YANO TOSHIHARU	9	2013–2015
IBM	4	2009–2015

Locations

Location	Patents	Span
Jyoetsu, JP	21	2011–2017
Joetsu-shi, JP	10	2008–2015
Niigata, JP	5	2007–2011
Tokyo, JP	4	2017–2019
Usui-gun, JP	2	2001–2002