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Inventor

Siddarth Krishnan

Inventor
Prasanthi Nilayam, IN

Overview

4→
Patents
2016–2021
Patent span
Electricity
Primary field (CPC H)

Patents· 4 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H05Gprimary
H05GX-ray technique33%
G11CStatic stores17%
H01LSemiconductor devices17%
H10DInorganic electric semiconductor devices17%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1017%
PatentTitleYear
11,049,722Methods and materials for modifying the threshold voltage of metal oxide stacks202111,017,856Soft reset for multi-level programming of memory cells in non-Von Neumann architectures20219,451,684'Dual pulse driven extreme ultraviolet (EUV) radiation source method'20169,301,381'Dual pulse driven extreme ultraviolet (EUV) radiation source utilizing a droplet comprising a metal core with dual concentric shells of buffer gas'2016

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2016Patents assigned to IBM (2)· patent assignee history
2016Based in Prasanthi Nilayam, IN· patent location history
2021Patents assigned to APPLIED MATERIALS INC (2)· patent assignee history
2021Based in Newark, CA, US· patent location history
2021Based in San Jose, CA, US· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
APPLIED MATERIALS INC22021
IBM22016
Locations
LocationPatentsSpan
Prasanthi Nilayam, IN22016
Newark, California, US12021
San Jose, California, US12021