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Inventor

Tai Chiang Chen

Inventor
Tianjin, CN

Overview

3→
Patents
2010
Patent span
Electricity
Primary field (CPC H)

Patents· 3 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices60%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1020%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests20%
PatentTitleYear
7,799,642'Trench MOSFET and method of manufacture utilizing two masks'20107,759,238'Method for fabricating semiconductor device capable of adjusting the thickness of gate oxide layer'20107,687,352'Trench MOSFET and method of manufacture utilizing four masks'2010

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2010Patents assigned to INPOWER SEMICONDUCTOR CO LTD (2)· patent assignee history
2010Patents assigned to SEMICONDUCTOR MFG INT SHANGHAI (1)· patent assignee history
2010Based in Tianjin, CN· patent location history
2010Based in Shanghai, CN· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
INPOWER SEMICONDUCTOR CO LTD22010
SEMICONDUCTOR MFG INT SHANGHAI12010
Locations
LocationPatentsSpan
Tianjin, CN22010
Shanghai, CN12010