Inventor
Toshiaki Nishibe
Inventor
Tokyo, JP
Overview
Patents· 8 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Wprimary
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1088%
H03HImpedance networks, e.g. resonant circuits13%
PatentTitleYear
6,542,045'High-frequency variable attenuator having a controllable reference voltage'20036,319,753'Semiconductor device having lead terminals bent in J-shape'20016,242,797'Semiconductor device having pellet mounted on radiating plate thereof'20016,177,720'Method of manufacturing a semiconductor device with a pair of radiating terminals and a plurality of lead terminals formed from a single lead frame'20016,175,150'Plastic-encapsulated semiconductor device and fabrication method thereof'20016,165,818'Method of manufacturing a semiconductor device with a pair of radiating terminals and a plurality of lead terminals formed from a single lead frame'20006,150,715'Semiconductor device with radiation plate for high radiation character and method of manufacturing the same'20006,104,086'Semiconductor device having lead terminals bent in J-shape'2000Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2000–2001Patents assigned to NEC CORP (7)· patent assignee history
2000–2003Based in Tokyo, JP· patent location history
2003Patents assigned to NEC COMPOUND SEMICONDUCTOR (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| NEC CORP | 7 | 2000–2001 |
| NEC COMPOUND SEMICONDUCTOR | 1 | 2003 |
Locations
| Location | Patents | Span |
|---|---|---|
| Tokyo, JP | 8 | 2000–2003 |