Inventor

Eugene P. Marsh

Inventor

Boise, ID, US

Overview

1999–2021

Patent span

Electricity

Primary field (CPC H)

Patents· 202 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Pprimary

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1015%

C23CCoating metallic material14%

H10DInorganic electric semiconductor devices14%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1010%

H10NElectric solid-state devices not otherwise provided for6%

H10BElectronic memory devices5%

Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests5%

H01LSemiconductor devices4%

Y10TTechnical subjects covered by former us classification3%

B82YSpecific uses or applications of nanostructures3%

PatentTitleYear

10,987,648Functionalized surfaces and preparation thereof2021 10,894,242Heated nanowells for polynucleotide synthesis2021 10,744,477Devices and methods for oligonucleic acid library synthesis2020 10,700,271Methods of forming and using materials containing silicon and nitrogen2020 10,669,304Methods and devices for de novo oligonucleic acid assembly2020 10,651,375Memory cells, semiconductor devices including the memory cells, and methods of operation2020 10,384,189Functionalized surfaces and preparation thereof2019 10,374,156Memory cells including a metal chalcogenide material and related methods2019 10,283,705Memory cells, semiconductor devices including the memory cells, and methods of operation2019 10,153,431Resistive memory having confined filament formation2018 9,981,239Devices and methods for oligonucleic acid library synthesis2018 9,978,937Methods of forming and using materials containing silicon and nitrogen2018 9,935,264Memory cells and methods of fabrication2018 9,895,673'Functionalized surfaces and preparation thereof'2018 9,722,178'Resistive memory having confined filament formation'2017 9,627,442'Horizontally oriented and vertically stacked memory cells'2017 9,496,491'Methods of forming a metal chalcogenide material and related methods of forming a memory cell'2016 9,496,355'Conductive nanoparticles'2016 9,406,879'Conductive bridge memory system and method of manufacture thereof'2016 9,406,880'Resistive memory having confined filament formation'2016 9,355,837'Methods of forming and using materials containing silicon and nitrogen'2016 9,349,949'Horizontally oriented and vertically stacked memory cells'2016 9,287,502'Resistance variable memory cell structures and methods'2016 9,269,900'Methods of depositing phase change materials and methods of forming memory'2016 9,246,086'Conductive bridge memory system and method of manufacture thereof'2016 9,234,279'Porous organosilicate layers, and vapor deposition systems and methods for preparing same'2016 9,105,843'Multilevel mixed valence oxide (MVO) memory'2015 9,065,048'Methods of forming germanium-antimony-tellurium materials and chalcogenide materials'2015 9,029,856'Methods of forming a metal telluride material, related methods of forming a semiconductor device structure, and related semiconductor device structures'2015 9,024,283'Horizontally oriented and vertically stacked memory cells'2015 9,023,711'Methods for forming a conductive material and methods for forming a conductive structure'2015 9,006,075'Memory cells, semiconductor devices including such cells, and methods of fabrication'2015 8,945,305'Methods of selectively forming a material using parylene coating'2015 8,853,713'Resistive memory having confined filament formation'2014 8,840,990'Porous organosilicate layers, and vapor deposition systems and methods for preparing same'2014 8,785,239'Methods of depositing antimony-comprising phase change material onto a substrate and methods of forming phase change memory circuitry'2014 8,765,519'Methods of forming phase change materials and methods of forming phase change memory circuitry'2014 8,759,146'Methods of forming germanium-antimony-tellurium materials and methods of forming a semiconductor device structure including the same'2014 8,753,933'Methods for forming a conductive material, methods for selectively forming a conductive material, methods for forming platinum, and methods for forming conductive structures'2014 8,753,738'Registered structure formation via the application of directed thermal energy to diblock copolymer films'2014 8,748,870'Methods of forming structures having nanotubes extending between opposing electrodes and structures including same'2014 8,741,688'Methods of forming a metal chalcogenide material'2014 8,734,957'Metal plating using seed film'2014 8,716,060'Confined resistance variable memory cell structures and methods'2014 8,697,486'Methods of forming phase change materials and methods of forming phase change memory circuitry'2014 8,633,110'Titanium nitride films'2014 8,624,225'Methods of forming structures having nanotubes extending between opposing electrodes and structures including same'2014 8,593,784'Thin film structure that may be used with an adhesion layer'2013 8,592,795'Multilevel mixed valence oxide (MVO) memory'2013 8,551,808'Methods of patterning a substrate including multilayer antireflection coatings'2013 8,551,564'Chemical vaporizer for material deposition systems and associated methods'2013 8,541,765'Resistance variable memory cell structures and methods'2013 8,481,361'Methods of depositing antimony-comprising phase change material onto a substrate and methods of forming phase change memory circuitry'2013 8,475,677'Etchant gas'2013 8,461,682'Ruthenium silicide diffusion barrier layers and methods of forming same'2013 8,455,296'Semiconductor processing'2013 8,431,240'Metal plating using seed film'2013 8,420,534'Atomic layer deposition of crystalline PrCaMnO (PCMO) and related methods'2013 8,409,449'Registered structure formation via the application of directed thermal energy to diblock copolymer films'2013 8,367,460'Horizontally oriented and vertically stacked memory cells'2013 8,323,736'Methods of forming metal-containing structures, and methods of forming germanium-containing structures'2012 8,314,456'Apparatus including rhodium-based charge traps'2012 8,298,938'Phase change memory cell structures and methods'2012 8,294,139'Multilayer antireflection coatings, structures and devices including the same and methods of making the same'2012 8,256,695'Method for purification of semiconducting single wall nanotubes'2012 8,236,899'Zwitterionic block copolymers and methods'2012 8,225,745'Chemical vaporizer for material deposition systems and associated methods'2012 8,222,127'Methods of forming structures having nanotubes extending between opposing electrodes and structures including same'2012 8,206,603'Methods of etching nanodots, methods of fabricating integrated circuit devices and device structures, methods of etching a layer comprising a late transition metal, and methods of forming a plurality of transistor gate constructions'2012 8,198,129'Methods of depositing antimony-comprising phase change material onto a substrate and methods of forming phase change memory circuitry'2012 8,163,341'Methods of forming metal-containing structures, and methods of forming germanium-containing structures'2012 8,148,197'Methods of forming germanium-antimony-tellurium materials and a method of forming a semiconductor device structure including the same'2012 8,124,445'Confined resistance variable memory cell structures and methods'2012 8,124,541'Etchant gas and a method for removing material from a late transition metal structure'2012 8,097,537'Phase change memory cell structures and methods'2012 8,083,953'Registered structure formation via the application of directed thermal energy to diblock copolymer films'2011 8,058,729'Titanium nitride films'2011 8,052,075'Method for purification of semiconducting single wall nanotubes'2011 8,034,315'Methods of forming devices comprising carbon nanotubes'2011 8,022,147'Zwitterionic block copolymers and methods'2011 8,003,521'Semiconductor processing'2011 7,993,539'Methods of etching nanodots, methods of removing nanodots from substrates, methods of fabricating integrated circuit devices, methods of etching a layer comprising a late transition metal, and methods of removing a layer comprising a late transition metal from a substrate'2011 7,989,290'Methods for forming rhodium-based charge traps and apparatus including rhodium-based charge traps'2011 7,960,291'Porous organosilicate layers, and vapor deposition systems and methods for preparing same'2011 7,943,507'Atomic layer deposition systems and methods including silicon-containing tantalum precursor compounds'2011 7,923,070'Atomic layer deposition method of forming conductive metal nitride-comprising layers'2011 7,910,660'Zwitterionic block copolymers and methods'2011 7,883,745'Chemical vaporizer for material deposition systems and associated methods'2011 7,837,889'Methods of etching nanodots, methods of removing nanodots from substrates, methods of fabricating integrated circuit devices, methods of etching a layer comprising a late transition metal, and methods of removing a layer comprising a late transition metal from a substrate'2010 7,789,319'System and method for recirculating fluid supply for an injector for a semiconductor fabrication chamber'2010 7,759,187'Metal plating using seed film'2010 7,732,533'Zwitterionic block copolymers and methods'2010 7,719,044'Platinum-containing integrated circuits and capacitor constructions'2010 7,696,624'Nucleation method for atomic layer deposition of cobalt on bare silicon during the formation of a semiconductor device'2010 7,625,694'Selective provision of a diblock copolymer material'2009 7,575,978'Method for making conductive nanoparticle charge storage element'2009 7,560,815'Device structures including ruthenium silicide diffusion barrier layers'2009 7,521,356'Atomic layer deposition systems and methods including silicon-containing tantalum precursor compounds'2009 7,512,170'Method of forming mirrors by surface transformation of empty spaces in solid state materials'2009 7,473,637'ALD formed titanium nitride films'2009 7,468,108'Metal layer forming methods and capacitor electrode forming methods'2008 7,427,570'Porous organosilicate layers, and vapor deposition systems and methods for preparing same'2008 7,393,785'Methods and apparatus for forming rhodium-containing layers'2008 7,378,129'Atomic layer deposition methods of forming conductive metal nitride comprising layers'2008 7,365,028'Methods of forming metal oxide and semimetal oxide'2008 7,291,920'Semiconductor structures'2007 7,282,408'Surface treatment of an oxide layer to enhance adhesion of a ruthenium metal layer'2007 7,271,071'Method of forming a catalytic surface comprising at least one of Pt, Pd, Co and Au in at least one of elemental and alloy forms'2007 7,271,077'Deposition methods with time spaced and time abutting precursor pulses'2007 7,262,132'Metal plating using seed film'2007 7,260,125'Method of forming mirrors by surface transformation of empty spaces in solid state materials'2007 7,250,367'Deposition methods using heteroleptic precursors'2007 7,226,861'Methods and apparatus for forming rhodium-containing layers'2007 7,217,970'Devices containing platinum-iridium films and methods of preparing such films and devices'2007 7,214,602'Method of forming a conductive structure'2007 7,208,412'Method of forming metal oxide and semimetal oxide'2007 7,189,611'Metal plating using seed film'2007 7,160,817'Dielectric material forming methods'2007 7,157,783'Platinum stuffed with silicon oxide as a diffusion oxygen barrier for semiconductor devices'2007 7,142,577'Method of forming mirrors by surface transformation of empty spaces in solid state materials and structures thereon'2006 7,105,065'Metal layer forming methods and capacitor electrode forming methods'2006 7,098,503'Circuitry and capacitors comprising roughened platinum layers'2006 7,078,326'Nucleation method for atomic layer deposition of cobalt on bare silicon during the formation of a semiconductor device'2006 7,060,615'Methods of forming roughened layers of platinum'2006 7,052,953'Dielectric material forming methods and enhanced dielectric materials'2006 6,946,395'Devices containing zirconium-platinum-containing materials and methods for preparing such materials and devices'2005 6,943,073'Process for low temperature atomic layer deposition of RH'2005 6,903,005'Method for the formation of RuSixOy-containing barrier layers for high-k dielectrics'2005 6,900,107'Devices containing platinum-iridium films and methods of preparing such films and devices'2005 6,884,691'Method of forming a substrate having a surface comprising at least one of Pt, Pd, Co and Au in at least one of elemental and alloy forms'2005 6,881,260'Process for direct deposition of ALD RhO2'2005 6,867,093'Process for fabricating RuSixOy-containing adhesion layers'2005 6,867,449'Capacitor having RuSixOy-containing adhesion layers'2005 6,861,355'Metal plating using seed film'2005 6,858,535'Methods for patterning metal layers for use with forming semiconductor devices'2005 6,855,928'Analysis of semiconductor surfaces by secondary ion mass spectrometry and methods'2005 6,844,261'Method of forming ruthenium and ruthenium oxide films on a semiconductor structure'2005 6,840,988'Solvated ruthenium precursors for direct liquid injection of ruthenium and ruthenium oxide'2005 6,830,983'Method of making an oxygen diffusion barrier for semiconductor devices using platinum, rhodium, or iridium stuffed with silicon oxide'2004 6,813,136'Memory structure with an annealed film'2004 6,800,937'RuSixOy-containing adhesion layers and process for fabricating the same'2004 6,800,521'Process for the formation of RuSixOy-containing barrier layers for high-k dielectrics'2004 6,796,313'Methods of cleaning vaporization surfaces'2004 6,787,449'Method for the formation of RuSixOy-containing barrier layers for high-k dielectrics'2004 6,783,657'Systems and methods for the electrolytic removal of metals from substrates'2004 6,764,895'Process for fabricating RuSixOy-containing adhesion layers'2004 6,757,153'Thin film structure that may be used with an adhesion layer'2004 6,744,138'RuSixOy-containing barrier layers for high-k dielectrics'2004 6,737,317'Method of manufacturing a capacitor having RuSixOy-containing adhesion layers'2004 6,737,313'Surface treatment of an oxide layer to enhance adhesion of a ruthenium metal layer'2004 6,713,760'Analysis of semiconductor surfaces by secondary ion mass spectrometry and methods'2004 6,690,055'Devices containing platinum-rhodium layers and methods'2004 6,677,252'Methods for planarization of non-planar surfaces in device fabrication'2004 6,673,701'Atomic layer deposition methods'2004 6,660,631'Devices containing platinum-iridium films and methods of preparing such films and devices'2003 6,656,835'Process for low temperature atomic layer deposition of Rh'2003 6,642,567'Devices containing zirconium-platinum-containing materials and methods for preparing such materials and devices'2003 6,626,999'Vapor forming devices'2003 6,617,634'RuSixOy-containing adhesion layers and process for fabricating the same'2003 6,610,568'Process for fabricating RuSixOy-containing adhesion layers'2003 6,583,022'Methods of forming roughened layers of platinum and methods of forming capacitors'2003 6,569,689'Method of forming a capacitor'2003 6,541,067'Solvated ruthenium precursors for direct liquid injection of ruthenium and ruthenium oxide and method of using same'2003 6,528,786'Analysis of semiconductor surfaces by secondary ion mass spectrometry and methods'2003 6,517,616'Solvated ruthenium precursors for direct liquid injection of ruthenium and ruthenium oxide'2003 6,506,666'Method of fabricating an SrRuO3 film'2003 6,495,458'Method for producing low carbon/oxygen conductive layers'2002 6,462,367'RuSixOy-containing adhesion layers'2002 6,461,909'Process for fabricating RuSixOy-containing adhesion layers'2002 6,455,423'Direct writing of low carbon conductive material'2002 6,429,439'Organic field ionization source'2002 6,421,223'Thin film structure that may be used with an adhesion layer'2002 6,419,994'Methods of chemical vapor deposition'2002 6,403,414'Method for producing low carbon/oxygen conductive layers'2002 6,403,499'Planarization of non-planar surfaces in device fabrication'2002 6,387,802'Nucleation and deposition of Pt films using ultraviolet irradiation'2002 6,342,445'Method for fabricating an SrRuO3 film'2002 6,323,511'Structures including low carbon/oxygen conductive layers'2001 6,323,081'Diffusion barrier layers and methods of forming same'2001 6,318,381'Methods of cleaning vaporization surfaces'2001 6,312,557'Method and apparatus for using photoemission to determine the endpoint of an etch process'2001 6,284,655'Method for producing low carbon/oxygen conductive layers'2001 6,281,161'Platinum-containing materials and catalysts'2001 6,281,125'Methods for preparing ruthenium oxide films'2001 6,271,131'Methods for forming rhodium-containing layers such as platinum-rhodium barrier layers'2001 6,271,519'Analysis of semiconductor surfaces by secondary ion mass spectrometry'2001 6,265,722'Organic field ionization source'2001 6,261,850'Direct writing of low carbon conductive material'2001 6,232,600'Analysis of semiconductor surfaces by secondary ion mass spectrometry'2001 6,218,297'Patterning conductive metal layers and methods using same'2001 6,218,316'Planarization of non-planar surfaces in device fabrication'2001 6,204,178'Nucleation and deposition of PT films using ultraviolet irradiation'2001 6,204,172'Low temperature deposition of barrier layers'2001 6,197,628'Ruthenium silicide diffusion barrier layers and methods of forming same'2001 6,187,392'Laser desorption of CVD precursor species'2001 6,143,667'Method and apparatus for using photoemission to determine the endpoint of an etch process'2000 6,143,085'Laser desorption of CVD precursor species'2000 6,133,159'Methods for preparing ruthenium oxide films'2000 6,074,945'Methods for preparing ruthenium metal films'2000 6,051,287'Laser desorption of CVD precursor species'2000 5,990,559'Circuitry comprising roughened platinum layers, platinum-containing materials, capacitors comprising roughened platinum layers, methods forming roughened layers of platinum, and methods of forming capacitors'1999 5,920,068'Analysis of semiconductor surfaces by secondary ion mass spectrometry'1999

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1999–2020Patents assigned to MICRON TECHNOLOGY INC (188)· patent assignee history

1999–2020Based in Boise, ID, US· patent location history

2006–2016Patents assigned to MARSH EUGENE P (42)· patent assignee history

2011–2014Patents assigned to KRAUS BRENDA D (4)· patent assignee history

2012–2015Patents assigned to QUICK TIMOTHY A (13)· patent assignee history

2013Based in Bosie, ID, US· patent location history

2018–2021Patents assigned to TWIST BIOSCIENCE CORP (7)· patent assignee history

2018–2021Based in El Granada, CA, US· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
MICRON TECHNOLOGY INC	188	1999–2020
MARSH EUGENE Pself	42	2006–2016
QUICK TIMOTHY A	13	2012–2015
TWIST BIOSCIENCE CORP	7	2018–2021
KRAUS BRENDA D	4	2011–2014

Locations

Location	Patents	Span
Boise, ID, US	191	1999–2020
El Granada, California, US	10	2018–2021
Bosie, ID, US	1	2013