Inventor
SANGWAN NAM
Inventor
KR
Overview
Patents· 31 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
G11Cprimary
G11CStatic stores41%
H10BElectronic memory devices23%
G06FElectric digital data processing18%
H01LSemiconductor devices9%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h108%
G01RMeasuring electric variables1%
PatentTitleYear
12,562,210Voltage supply circuit, memory device including the same, and operating method of memory device202612,495,556Memory devices202512,477,742Integrated circuit devices including arc protection diodes for memory structures202512,446,235Integrated circuit device with vertical cell array and through electrodes202512,190,954Memory device and program method of ground select transistors202512,181,953Operating method of a nonvolatile memory device for programming multi-page data202412,131,798Non-volatile memory device for detecting defects of bit lines and word lines202412,100,463Semiconductor memory device detecting defect, and operating method thereof202412,094,552Non-volatile memory device, operating method thereof, controller for controlling the same, and storage device having the same202411,961,560Integrated circuit devices202411,942,154Non-volatile memory device and method of operating nonvolatile memory device202411,915,773Nonvolatile memory device and method of detecting wordline defect of the same202411,881,272Nonvolatile memory device and method of programming in a nonvolatile memory202411,848,069Page buffer including latches and memory device including the page buffer202311,815,982Operating method of a nonvolatile memory device for programming multipage data202311,804,280Non-volatile memory device, operating method thereof, controller for controlling the same, and storage device having the same202311,797,405Nonvolatile memory device having cell-over-periphery (COP) structure with address re-mapping202311,798,626Nonvolatile memory device and method of operating a nonvolatile memory202311,763,879Memory device202311,709,629Nonvolatile memory device202311,626,165Memory device202311,615,855Nonvolatile memory device and method of programming in a nonvolatile memory202311,514,997Controller, a storage device including the controller, and a reading method of the storage device202211,501,847Nonvolatile memory device with address re-mapping202211,500,706Operating method of a nonvolatile memory device for programming multi-page data202211,475,956Nonvolatile memory device and method of operating a nonvolatile memory202211,467,932Nonvolatile memory device having cell-over-periphery (COP) structure with address re-mapping202211,437,105Memory device202211,386,974Non-volatile memory device, operating method thereof, controller for controlling the same, and storage device having the same202211,205,471Memory device and operating method thereof202111,200,002Nonvolatile memory device2021Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2021–2026Patents assigned to SAMSUNG ELECTRONICS CO LTD (31)· patent assignee history
2021–2026Based in KR· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SAMSUNG ELECTRONICS CO LTD | 31 | 2021–2026 |
Locations
| Location | Patents | Span |
|---|---|---|
| KR | 31 | 2021–2026 |