LexDanaLexDanabeta
Inventor

Masashi Shima

Inventor
Kawasaki, JP

Overview

49→
Patents
1997–2018
Patent span
Electricity
Primary field (CPC H)

Patents· 49 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices46%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1023%
H01LSemiconductor devices10%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests9%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h103%
A23BPreservation of foods, foodstuffs or non-alcoholic beverages2%
A23DEdible oils or fats, e.g. margarines, shortenings or cooking oils2%
B82YSpecific uses or applications of nanostructures2%
C11BProducing, e.g. by pressing raw materials or by extraction from waste materials, refining or preserving fats, fatty substances, e.g. lanolin, fatty oils or waxes2%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation1%
PatentTitleYear
9,865,734'Semiconductor device and fabrication method thereof'20189,577,098'Semiconductor device and fabrication method thereof'20179,401,427'Semiconductor device and fabrication method thereof'20169,123,742'Semiconductor device and method for manufacturing semiconductor device'20159,112,027'Semiconductor device and fabrication method thereof'20158,987,106'Semiconductor device manufacturing method'20158,853,673'Semiconductor device and fabrication method thereof'20148,846,478'Manufacturing method of semiconductor device'20148,841,725'Semiconductor device having channel dose region and method for manufacturing semiconductor device'20148,741,724'Method of manufacturing semiconductor device'20148,735,254'Manufacture method of a high voltage MOS semiconductor device'20148,735,945'Semiconductor device'20148,697,531'Method for fabricating a semiconductor device having stress/strain and protrusion'20148,686,501'Semiconductor device with high voltage transistor'20148,674,437'Semiconductor device and method for manufacturing semiconductor device'20148,633,075'Semiconductor device with high voltage transistor'20148,603,874'Method of manufacturing semiconductor device'20138,552,511'Semiconductor device and manufacturing method thereof'20138,497,178'Semiconductor device and method for making the same'20138,466,450'Semiconductor device and fabrication method thereof'20138,410,550'Breakdown voltage MOS semiconductor device'20138,362,522'Semiconductor device and method for manufacturing the same'20138,329,528'Semiconductor device and method of manufacturing semiconductor device'20128,222,701'P-channel MOS transistor and semiconductor integrated circuit device'20128,188,553'Semiconductor device and method for making the same'20128,158,498'P-channel MOS transistor and fabrication process thereof'20128,143,675'Semiconductor device and method of manufacturing semiconductor device'20128,106,467'Semiconductor device having carrier mobility raised by generating strain in channel region'20128,080,845'Semiconductor device'20118,072,031'P-channel MOS transistor and semiconductor integrated circuit device'20118,067,291'MOS field-effect transistor and manufacturing method thereof'20118,049,251'Semiconductor device and method for manufacturing the same'20117,994,586'Semiconductor device and manufacturing method of the same'20117,816,766'Semiconductor device with compressive and tensile stresses'20107,791,064'Semiconductor device and fabrication method thereof'20107,667,227'Semiconductor device and fabrication method thereof'20107,518,188'P-channel MOS transistor and fabrication process thereof'20097,476,941'Semiconductor integrated circuit device and fabrication process thereof'20097,456,473'MOS field effect transistor and manufacture method thereof'20087,435,656'Semiconductor device of transistor structure having strained semiconductor layer'20087,378,305'Semiconductor integrated circuit and fabrication process thereof'20087,262,465'P-channel MOS transistor and fabrication process thereof'20077,202,120'Semiconductor integrated circuit device and fabrication process thereof'20077,030,465'Semiconductor device that can increase the carrier mobility and method for fabricating the same'20066,930,374'Semiconductor device of transistor structure having strained semiconductor layer'20056,777,728'Semiconductor device and complementary semiconductor device'20046,459,120'Semiconductor device and manufacturing method of the same'20026,380,604'Quantum semiconductor device having quantum dots and optical detectors using the same'20025,591,994'Compound semiconductor field effect transistor having a controlled diffusion profile of impurity elements'1997

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1997–2008Patents assigned to FUJITSU LTD (11)· patent assignee history
1997–2018Based in Kawasaki, JP· patent location history
2009–2010Patents assigned to FUJITSU MICROELECTRONICS LTD (3)· patent assignee history
2010–2015Patents assigned to FUJITSU SEMICONDUCTOR LTD (32)· patent assignee history
2011–2015Patents assigned to SHIMA MASASHI (20)· patent assignee history
2013–2015Based in Yokohama, JP· patent location history
2014Based in Kuwana, JP· patent location history
2015–2018Patents assigned to SOCIONEXT INC (4)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
FUJITSU SEMICONDUCTOR LTD322010–2015
SHIMA MASASHIself202011–2015
FUJITSU LTD111997–2008
SOCIONEXT INC42015–2018
FUJITSU MICROELECTRONICS LTD32009–2010
Locations
LocationPatentsSpan
Kawasaki, JP381997–2018
Yokohama, JP102013–2015
Kuwana, JP12014