Inventor

Dennis M. Hausmann

Inventor

Lake Oswego, OR, US

Overview

2005–2021

Patent span

Electricity

Primary field (CPC H)

Patents· 81 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Pprimary

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1025%

C23CCoating metallic material24%

H01LSemiconductor devices18%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1011%

H01JElectric discharge tubes or discharge lamps6%

H10DInorganic electric semiconductor devices5%

H10NElectric solid-state devices not otherwise provided for3%

C01BNon-metallic elements1%

C01GCompounds containing metals not covered by subclasses c01d or c01f1%

C07FAcyclic, carbocyclic or heterocyclic compounds containing elements other than carbon, hydrogen, halogen, oxygen, nitrogen, sulfur, selenium or tellurium1%

PatentTitleYear

11,133,180Gapfill of variable aspect ratio features with a composite PEALD and PECVD method2021 11,107,683Selective growth of metal-containing hardmask thin films2021 10,998,187Selective deposition with atomic layer etch reset2021 10,903,071Selective deposition of silicon oxide2021 10,843,618Conformality modulation of metal oxide films using chemical inhibition2020 10,831,096Vacuum-integrated hardmask processes and apparatus2020 10,825,679Selective growth of SIO2 on dielectric surfaces in the presence of copper2020 10,804,099Selective inhibition in atomic layer deposition of silicon-containing films2020 10,804,144Deposition of aluminum oxide etch stop layers2020 10,777,407Selective deposition of silicon nitride on silicon oxide using catalytic control2020 10,763,108Geometrically selective deposition of a dielectric film2020 10,662,526Method for selective deposition using a base-catalyzed inhibitor2020 10,665,501Deposition of Aluminum oxide etch stop layers2020 10,643,889Pre-treatment method to improve selectivity in a selective deposition process2020 10,643,846Selective growth of metal-containing hardmask thin films2020 10,629,429Selective deposition of silicon oxide2020 10,559,461Selective deposition with atomic layer etch reset2020 10,515,816Integrating atomic scale processes: ALD (atomic layer deposition) and ALE (atomic layer etch)2019 10,514,598Vacuum-integrated hardmask processes and apparatus2019 10,490,413Selective growth of silicon nitride2019 10,460,930Selective growth of SiO2 on dielectric surfaces in the presence of copper2019 10,454,029Method for reducing the wet etch rate of a sin film without damaging the underlying substrate2019 10,373,840Technique to deposit sidewall passivation for high aspect ratio cylinder etch2019 10,361,076Gapfill of variable aspect ratio features with a composite PEALD and PECVD method2019 10,242,866Selective deposition of silicon nitride on silicon oxide using catalytic control2019 10,199,212Selective growth of silicon oxide or silicon nitride on silicon surfaces in the presence of silicon oxide2019 10,186,426Integrating atomic scale processes: ALD (atomic layer deposition) and ale (atomic layer etch)2019 10,176,984Selective deposition of silicon oxide2019 10,141,505Bromine containing silicon precursors for encapsulation layers2018 10,043,655Plasma activated conformal dielectric film deposition2018 10,043,656Selective growth of silicon oxide or silicon nitride on silicon surfaces in the presence of silicon oxide2018 9,996,004EUV photopatterning of vapor-deposited metal oxide-containing hardmasks2018 9,911,595'Selective growth of silicon nitride'2018 9,905,414'Vapor deposition of metal oxides, silicates and phosphates, and silicon dioxide'2018 9,873,946Multi-station sequential curing of dielectric films2018 9,875,891Selective inhibition in atomic layer deposition of silicon-containing films2018 9,865,815'Bromine containing silicon precursors for encapsulation layers'2018 9,859,153'Deposition of aluminum oxide etch stop layers'2018 9,805,941'Integrating atomic scale processes: ALD (atomic layer deposition) and ALE (atomic layer etch)'2017 9,793,110'Gapfill of variable aspect ratio features with a composite PEALD and PECVD method'2017 9,778,561'Vacuum-integrated hardmask processes and apparatus'2017 9,670,579'Method for depositing a chlorine-free conformal SiN film'2017 9,601,693'Method for encapsulating a chalcogenide material'2017 9,589,790'Method of depositing ammonia free and chlorine free conformal silicon nitride film'2017 9,576,811'Integrating atomic scale processes: ALD (atomic layer deposition) and ALE (atomic layer etch)'2017 9,570,274'Plasma activated conformal dielectric film deposition'2017 9,564,312'Selective inhibition in atomic layer deposition of silicon-containing films'2017 9,548,188'Method of conditioning vacuum chamber of semiconductor substrate processing apparatus'2017 9,384,998'Technique to deposit sidewall passivation for high aspect ratio cylinder etch'2016 9,257,274'Gapfill of variable aspect ratio features with a composite PEALD and PECVD method'2016 9,230,800'Plasma activated conformal film deposition'2016 9,214,333'Methods and apparatuses for uniform reduction of the in-feature wet etch rate of a silicon nitride film formed by ALD'2015 9,070,555'Method for depositing a chlorine-free conformal sin film'2015 8,999,859'Plasma activated conformal dielectric film deposition'2015 8,980,769'Multi-station sequential curing of dielectric films'2015 8,728,956'Plasma activated conformal film deposition'2014 8,647,993'Methods for UV-assisted conformal film deposition'2014 8,637,411'Plasma activated conformal dielectric film deposition'2014 8,592,328'Method for depositing a chlorine-free conformal sin film'2013 8,563,414'Methods for forming conductive carbon films by PECVD'2013 8,536,070'Vapor deposition of silicon dioxide nanolaminates'2013 8,334,016'Vapor deposition of metal oxides, silicates and phosphates, and silicon dioxide'2012 8,008,743'Vapor deposition of silicon dioxide nanolaminates'2011 7,790,633'Sequential deposition/anneal film densification method'2010 7,745,346'Method for improving process control and film conformality of PECVD film'2010 7,700,155'Method and apparatus for modulation of precursor exposure during a pulsed deposition process'2010 7,550,851'Adhesion of tungsten nitride films to a silicon surface'2009 7,507,848'Vapor deposition of metal oxides, silicates and phosphates, and silicon dioxide'2009 7,491,653'Metal-free catalysts for pulsed deposition layer process for conformal silica laminates'2009 7,482,247'Conformal nanolaminate dielectric deposition and etch bag gap fill process'2009 7,297,608'Method for controlling properties of conformal silica nanolaminates formed by rapid vapor deposition'2007 7,294,583'Methods for the use of alkoxysilanol precursors for vapor deposition of SiO2 films'2007 7,271,112'Methods for forming high density, conformal, silica nanolaminate films via pulsed deposition layer in structures of confined geometry'2007 7,223,707'Dynamic rapid vapor deposition process for conformal silica laminates'2007 7,202,185'Silica thin films produced by rapid surface catalyzed vapor deposition (RVD) using a nucleation layer'2007 7,160,802'Adhesion of tungsten nitride films to a silicon surface'2007 7,148,155'Sequential deposition/anneal film densification method'2006 7,129,189'Aluminum phosphate incorporation in silica thin films produced by rapid surface catalyzed vapor deposition (RVD)'2006 7,097,878'Mixed alkoxy precursors and methods of their use for rapid vapor deposition of SiO2 films'2006 6,969,539'Vapor deposition of metal oxides, silicates and phosphates, and silicon dioxide'2005 6,867,152'Properties of a silica thin film produced by a rapid vapor deposition (RVD) process'2005

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2005–2018Patents assigned to NOVELLUS SYSTEMS INC (29)· patent assignee history

2005–2018Patents assigned to HARVARD COLLEGE (6)· patent assignee history

2005–2018Based in Los Gatos, CA, US· patent location history

2009–2021Based in Lake Oswego, OR, US· patent location history

2012–2015Patents assigned to HAUSMANN DENNIS (6)· patent assignee history

2013–2014Patents assigned to HENRI JON (4)· patent assignee history

2015–2021Patents assigned to LAM RES CORP (46)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
LAM RES CORP	46	2015–2021
NOVELLUS SYSTEMS INC	29	2005–2018
HARVARD COLLEGE	6	2005–2018
HAUSMANN DENNISself	6	2012–2015
HENRI JON	4	2013–2014

Locations

Location	Patents	Span
Lake Oswego, OR, US	62	2009–2021
Los Gatos, California, US	19	2005–2018