Inventor
Tsu-An Lin
Inventor
Taichung, TW
Overview
Patents· 8 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices36%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1029%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1021%
H10BElectronic memory devices14%
PatentTitleYear
6,380,082'Method of fabricating Cu interconnects with reduced Cu contamination'20026,277,736'Method for forming gate'20016,197,698'Method for etching a poly-silicon layer of a semiconductor wafer'20016,180,532'Method for forming a borderless contact hole'20016,150,223'Method for forming gate spacers with different widths'20006,066,541'Method for fabricating a cylindrical capacitor'20005,994,233'Oxide etching method'19995,923,989'Method of fabricating rugged capacitor of high density DRAMs'1999Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1999–2002Patents assigned to UNITED MICROELECTRONICS CORP (6)· patent assignee history
1999–2000Patents assigned to NANYA TECHNOLOGY CORP (2)· patent assignee history
1999–2002Based in Taichung, TW· patent location history
2001Based in Hsinchu County, TW· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| UNITED MICROELECTRONICS CORP | 6 | 1999–2002 |
| NANYA TECHNOLOGY CORP | 2 | 1999–2000 |
Locations
| Location | Patents | Span |
|---|---|---|
| Taichung, TW | 7 | 1999–2002 |
| Hsinchu County, TW | 1 | 2001 |