Inventor
Erwin J. Prinz
Inventor
Austin, TX, US
Overview
Patents· 22 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices26%
G11CStatic stores24%
H10BElectronic memory devices22%
B82YSpecific uses or applications of nanostructures20%
B27NManufacture by dry processes of articles, with or without organic binding agents, made from particles or fibres consisting of wood or other lignocellulosic or like organic material2%
G11BInformation storage based on relative movement between record carrier and transducer2%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h102%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests2%
PatentTitleYear
7,955,877'Method for simulating long-term performance of a non-volatile memory by exposing the non-volatile memory to heavy-ion radiation'20117,732,278'Split gate memory cell and method therefor'20107,700,439'Silicided nonvolatile memory and method of making same'20107,491,600'Nanocrystal bitcell process integration for high density application'20097,456,465'Split gate memory cell and method therefor'20087,439,134'Method for process integration of non-volatile memory cell transistors with transistors of another type'20087,364,969'Semiconductor fabrication process for integrating formation of embedded nonvolatile storage device with formation of multiple transistor device types'20087,341,914'Method for forming a non-volatile memory and a peripheral device on a semiconductor substrate'20087,211,858'Split gate storage device including a horizontal first gate and a vertical second gate in a trench'20077,160,775'Method of discharging a semiconductor device'20076,958,265'Semiconductor device with nanoclusters'20056,898,128'Programming of a memory with discrete charge storage elements'20056,898,129'Erase of a memory having a non-conductive storage medium'20056,828,618'Split-gate thin-film storage NVM cell'20046,816,414'Nonvolatile memory and method of making same'20046,791,883'Program and erase in a thin film storage non-volatile memory'20046,751,125'Gate voltage reduction in a memory read'20046,295,229'Semiconductor device and method of operating it'20016,133,093'Method for forming an integrated circuit'20005,981,340'Method of building an EPROM cell without drain disturb and reduced select gate resistance'19994,724,392'System for testing magnetic head/disk interfaces'19884,116,163'Apparatus to coat a flowing mass of particulate material'1978Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1978Patents assigned to FAHRNI PETER (1)· patent assignee history
1978Based in Adliswil, CH· patent location history
1988Patents assigned to IBM (1)· patent assignee history
1988Based in Aidlingen, DE· patent location history
1999–2001Patents assigned to MOTOROLA INC (3)· patent assignee history
1999–2011Based in Austin, TX, US· patent location history
2004–2011Patents assigned to FREESCALE SEMICONDUCTOR INC (17)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| FREESCALE SEMICONDUCTOR INC | 17 | 2004–2011 |
| MOTOROLA INC | 3 | 1999–2001 |
| FAHRNI PETER | 1 | 1978 |
| IBM | 1 | 1988 |
Locations
| Location | Patents | Span |
|---|---|---|
| Austin, Texas, US | 20 | 1999–2011 |
| Aidlingen, DE | 1 | 1988 |
| Adliswil, CH | 1 | 1978 |