Inventor
MASATOMO SHIBATA
Inventor
JP
Overview
Patents· 3 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
C30Bprimary
C30BSingle-crystal growth43%
B32BLayered products, i.e. products built-up of strata of flat or non-flat, e.g. cellular or honeycomb, form29%
H01LSemiconductor devices14%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1014%
PatentTitleYear
12,553,150Gallium nitride single crystal substrate and method for producing the same202612,258,678Gallium nitride single crystal substrate202511,718,927Group III nitride crystal substrate having a diameter of 4 inches or more and a curved c-plane with a radius of curvature of 15 m or more2023Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2023–2026Patents assigned to SUMITOMO CHEMICAL CO (3)· patent assignee history
2023–2026Based in JP· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SUMITOMO CHEMICAL CO | 3 | 2023–2026 |
Locations
| Location | Patents | Span |
|---|---|---|
| JP | 3 | 2023–2026 |