Inventor
Gary E. Ruland
Inventor
Morris Plains, NJ, US
Overview
Patents· 7 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
C30Bprimary
C30BSingle-crystal growth50%
Y10TTechnical subjects covered by former us classification21%
B28DWorking stone or stone-like materials14%
H01BCables14%
PatentTitleYear
RE048378Vanadium compensated, SI SiC single crystals of NU and PI type and the crystal growth process thereof202110,793,972High quality silicon carbide crystals and method of making the same2020RE046315'Large diameter, high quality SiC single crystals, method and apparatus'20179,388,509'Method for synthesizing ultrahigh-purity silicon carbide'20169,322,110'Vanadium doped SiC single crystals and method thereof'20169,090,989'Vanadium compensated, SI SiC single crystals of NU and PI type and the crystal growth process thereof'20158,741,413'Large diameter, high quality SiC single crystals, method and apparatus'2014Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2014–2017Patents assigned to II VI INC (5)· patent assignee history
2014–2021Based in Morris Plains, NJ, US· patent location history
2020–2021Patents assigned to II VI DELAWARE INC (2)· patent assignee history
2020Based in Oakland, NJ, US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| II VI INC | 5 | 2014–2017 |
| II VI DELAWARE INC | 2 | 2020–2021 |
Locations
| Location | Patents | Span |
|---|---|---|
| Morris Plains, New Jersey, US | 6 | 2014–2021 |
| Oakland, New Jersey, US | 1 | 2020 |