Inventor

Mauricio Manfrini

Inventor

TW

Overview

2021–2026

Patent span

Electricity

Primary field (CPC H)

Patents· 121 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Bprimary

H10BElectronic memory devices24%

H10DInorganic electric semiconductor devices22%

H01LSemiconductor devices19%

H10NElectric solid-state devices not otherwise provided for11%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h109%

G11CStatic stores7%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h107%

B82YSpecific uses or applications of nanostructures1%

C23CCoating metallic material0%

G06NComputing arrangements based on specific computational models0%

PatentTitleYear

12,568,771Memory cell with magnetic access selector apparatus2026 12,563,742Multi-gate selector switches for memory cells and methods of forming the same2026 12,563,737Memory device fabrication through wafer bonding2026 12,557,342Transistor, integrated circuit, and manufacturing method of transistor2026 12,557,293Ferroelectric memory device using back-end-of-line (BEOL) thin film access transistors and methods for forming the same2026 12,538,522Access transistor including a metal oxide barrier layer and methods for forming the same2026 12,507,419Memory cell device with thin-film transistor selector and methods for forming the same2025 12,471,299Ferroelectric tunnel junction devices with a sparse seed layer and methods for forming the same2025 12,464,730Method of forming capacitors through wafer bonding2025 12,456,676Semiconductor device including first and second transistor channels2025 12,457,753Back-end-of-line selector for memory device2025 12,453,076High-density 3D-DRAM cell with scaled capacitors2025 12,446,231Method of integrating a capacitor including a non-linear polar material with a transistor through wafer bonding2025 12,439,606Gate coupled non-linear polar material based capacitors for memory and logic2025 12,402,355Access transistor including a metal oxide barrier layer and methods for forming the same2025 12,396,211Thin film transistor, semiconductor device and method of fabricating thin film transistor2025 12,396,371Three-state memory device2025 12,376,312Methods of fabricating planar capacitors on a shared plate electrode2025 12,369,326Capacitor devices with shared electrode and methods of fabrication2025 12,349,363Ferroelectric device and methods of forming the same2025 12,349,603Transistor, semiconductor device including the same, and manufacturing method thereof2025 12,349,365Drain coupled non-linear polar material based capacitors for memory and logic2025 12,349,368Memory device including a semiconducting metal oxide fin transistor and methods of forming the same2025 12,349,361Ferroelectric memory device and method of forming the same2025 12,336,184Methods of fabricating trench capacitors on a shared plate electrode2025 12,328,878Integration of 2T-2025 12,324,163Planar capacitors with shared electrode and methods of fabrication2025 12,324,360Semiconductor structure and method of forming the same2025 12,302,590Ferroelectric MFM capacitor array and methods of making the same2025 12,289,892Memory device structure and manufacturing method thereof2025 12,274,071Capacitor integrated with a transistor for logic and memory applications2025 12,262,541Trench capacitors with shared electrode2025 12,255,236Self-aligned active regions and passivation layer and methods of making the same2025 12,232,328Memory devices2025 12,230,716Semiconductor structure with thin film transistor2025 12,219,780High-density memory device with planar thin film transistor (TFT) selector and methods for making the same2025 12,219,779Spacer-defined back-end transistor as memory selector2025 12,219,778Multi-gate selector switches for memory cells and methods of forming the same2025 12,206,024Transistors including crystalline raised active regions and methods for forming the same2025 12,207,476Memory cell with unipolar selectors2025 12,191,389Layered structure, semiconductor device including the same, and manufacturing method thereof2025 12,183,825Thin film transistor including a hydrogen-blocking dielectric barrier and methods for forming the same2024 12,176,433Polarization enhancement structure for enlarging memory window2024 12,159,942Semiconductor device and method for manufacturing the same2024 12,154,938Ferroelectric MFM capacitor array and methods of making the same2024 12,148,828Semiconductor device and manufacturing method thereof2024 12,144,184Tunnel junction selector MRAM2024 12,137,621Intercalated metal/dielectric structure for nonvolatile memory devices2024 12,137,617Memory cell with magnetic access selector apparatus2024 12,125,920Dual-layer channel transistor and methods of forming same2024 12,125,921Semiconducting metal oxide transistors having a patterned gate and methods for forming the same2024 12,120,885Ferroelectric tunnel junction memory device using a magnesium oxide tunneling dielectric and methods for forming the same2024 12,094,923Rapid thermal annealing (RTA) methodologies for integration of perovskite-material based memory devices2024 12,080,768Transistor, semiconductor structure, and manufacturing method thereof2024 12,075,710Three-state memory device2024 12,075,633Vertical metal oxide semiconductor channel selector transistor and methods of forming the same2024 12,062,584Iterative method of multilayer stack development for device applications2024 12,063,870Transistor, semiconductor device including the same, and manufacturing method thereof2024 12,058,873Memory device including a semiconducting metal oxide fin transistor and methods of forming the same2024 12,057,471Ferroelectric tunnel junction devices with a sparse seed layer and methods for forming the same2024 12,051,702Crystalline semiconductor layer formed in BEOL processes2024 12,027,632Semiconductor structure with barrier and method for manufacturing the same2024 12,010,854Multi-level hydrogen barrier layers for memory applications and methods of fabrication2024 11,997,855Back-end-of-line selector for memory device2024 11,955,548Two-dimensional (2D) material for oxide semiconductor (OS) ferroelectric field-effect transistor (FeFET) device2024 11,955,549Layered structure, semiconductor device including the same, and manufacturing method thereof2024 11,949,020Transistor, integrated circuit, and manufacturing method2024 11,943,933Ferroelectric memory device using back-end-of-line (BEOL) thin film access transistors and methods for forming the same2024 11,942,147Semiconducting metal oxide memory device using hydrogen-mediated threshold voltage modulation and methods for forming the same2024 11,929,436Thin transistor including a hydrogen-blocking dielectric barrier and methods for forming the same2024 11,923,459Transistor including hydrogen diffusion barrier film and methods of forming same2024 11,916,144Semiconductor device and manufacturing method thereof2024 11,917,832Ferroelectric tunnel junction devices with metal-FE interface layer and methods for forming the same2024 11,908,704Method of fabricating a perovskite-material based planar capacitor using rapid thermal annealing (RTA) methodologies2024 11,894,417Method of fabricating a perovskite-material based trench capacitor using rapid thermal annealing (RTA) methodologies2024 11,871,584Multi-level hydrogen barrier layers for memory applications2024 11,869,843Integrated trench and via electrode for memory device applications and methods of fabrication2024 11,869,928Dual hydrogen barrier layer for memory devices2024 11,862,517Integrated trench and via electrode for memory device applications2024 11,855,226Thin film transistor, semiconductor device and method of fabricating thin film transistor2023 11,844,203Conductive and insulative hydrogen barrier layer for memory devices2023 11,844,225Dual hydrogen barrier layer for memory devices integrated with low density film for logic structures and methods of fabrication2023 11,839,070High density dual encapsulation materials for capacitors and methods of fabrication2023 11,839,088Integrated via and bridge electrodes for memory array applications and methods of fabrication2023 11,817,485Self-aligned active regions and passivation layer and methods of making the same2023 11,805,657Ferroelectric tunnel junction memory device using a magnesium oxide tunneling dielectric and methods for forming the same2023 11,791,420Semiconductor device and method for manufacturing the same2023 11,785,780Semiconductor device and method of fabricating the same2023 11,778,836Memory cell with unipolar selectors2023 11,769,790Rapid thermal annealing (RTA) methodologies for integration of perovskite-material based trench capacitors2023 11,765,908Memory device fabrication through wafer bonding2023 11,757,047Semiconducting metal oxide transistors having a patterned gate and methods for forming the same2023 11,756,987Ferroelectric tunnel junction devices with discontinuous seed structure and methods for forming the same2023 11,751,487Semiconductor device and method of forming the same2023 11,737,284Tunnel junction selector MRAM2023 11,737,288High-density memory device with planar thin film transistor (TFT) selector and methods for making the same2023 11,723,291Intercalated metal/dielectric structure for nonvolatile memory devices2023 11,705,516Polarization enhancement structure for enlarging memory window2023 11,699,655Transistor and fabrication method thereof2023 11,696,453Vertical metal oxide semiconductor channel selector transistor and methods of forming the same2023 11,647,636Memory devices2023 11,646,379Dual-layer channel transistor and methods of forming same2023 11,587,786Crystalline semiconductor layer formed in BEOL processes2023 11,586,885Synapse-inspired memory element for neuromorphic computing2023 11,581,335Ferroelectric tunnel junction devices with metal-FE interface layer and methods for forming the same2023 11,581,366Memory cell device with thin-film transistor selector and methods for forming the same2023 11,569,250Ferroelectric memory device using back-end-of-line (BEOL) thin film access transistors and methods for forming the same2023 11,569,294Semiconductor device and manufacturing method thereof2023 11,557,678Transistor, integrated circuit, and manufacturing method2023 11,527,552Ferroelectric memory device and method of forming the same2022 11,444,025Transistor and fabrication method thereof2022 11,430,512Semiconducting metal oxide memory device using hydrogen-mediated threshold voltage modulation and methods for forming the same2022 11,398,597Transistor, semiconductor device including the same, and manufacturing method thereof2022 11,380,840Memory cell with magnetic access selector apparatus2022 11,374,057Vertical metal oxide semiconductor channel selector transistor and methods of forming the same2022 11,355,496High-density 3D-dram cell with scaled capacitors2022 11,322,519Semiconductor device and method of fabricating the same2022 11,309,353Spacer-defined back-end transistor as memory selector2022 11,264,498Semiconductor device and method of fabricating the same2022 11,211,426Tunnel junction selector MRAM2021 11,177,267Semiconductor structure and manufacturing method thereof2021

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2021–2026Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (94)· patent assignee history

2021–2026Based in TW· patent location history

2023–2026Patents assigned to KEPLER COMPUTING INC (27)· patent assignee history

2023–2026Based in BE· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
TAIWAN SEMICONDUCTOR MFG CO LTD	94	2021–2026
KEPLER COMPUTING INC	27	2023–2026

Locations

Location	Patents	Span
TW	92	2021–2026
BE	29	2023–2026