LexDanaLexDanabeta
Inventor

Jianhua Yang

Inventor
Palo Alto, CA, US

Overview

78→
Patents
2011–2021
Patent span
Electricity
Primary field (CPC H)

Patents· 78 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Nprimary
H10NElectric solid-state devices not otherwise provided for24%
H10BElectronic memory devices21%
G11CStatic stores14%
H01LSemiconductor devices13%
H10DInorganic electric semiconductor devices7%
B82YSpecific uses or applications of nanostructures5%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h102%
A61CDentistry2%
B41JTypewriters1%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests1%
PatentTitleYear
10,984,313Multiply-accumulate calculation method and circuit suitable for neural network202110,922,263Serial communication device202110,741,759Diffusive memristor and device for synaptic emulator202010,740,672Capacitative artificial neural networks202010,426,607Apparatus for replacing a native heart valve and method of making the same201910,186,660Memristor device20199,889,659'Printhead with a memristor'20189,870,822'Non-volatile memory element with thermal-assisted switching control'20189,466,793'Memristors having at least one junction'20169,331,278'Forming memristors on imaging devices'20169,196,354'Memory resistor adjustment using feedback control'20159,184,213'Nanoscale switching device'20159,184,382'Memristive devices with layered junctions and methods for fabricating the same'20159,178,153'Memristor structure with a dopant source'20159,168,111'Abutment devices and methods for natural teeth'20159,171,613'Memristors with asymmetric electrodes'20159,165,645'High-reliability high-speed memristor'20159,159,476'Negative differential resistance device'20159,082,972'Bipolar resistive switch heat mitigation'20159,082,533'Memristive element based on hetero-junction oxide'20159,041,157'Method for doping an electrically actuated device'20159,040,948'Nanoscale switching device'20159,024,285'Nanoscale switching devices with partially oxidized electrodes'20159,018,083'Electrically actuated device and method of controlling the formation of dopants therein'20159,000,411'Memristor devices configured to control bubble formation'20158,982,601'Switchable junction with an intrinsic diode formed with a voltage dependent resistor'20158,921,960'Memristor cell structures for high density arrays'20148,923,034'Multi-level memory cell with continuously tunable switching'20148,912,520'Nanoscale switching device'20148,890,106'Hybrid circuit of nitride-based transistor and memristor'20148,891,284'Memristors based on mixed-metal-valence compounds'20148,882,217'Printhead assembly including memory elements'20148,878,342'Using alloy electrodes to dope memristors'20148,879,300'Switchable two-terminal devices with diffusion/drift species'20148,872,153'Device structure for long endurance memristors'20148,829,581'Resistive memory devices'20148,830,727'Multi-level memory cell with continuously tunable switching'20148,809,158'Device having memristive memory'20148,779,409'Low energy memristors with engineered switching channel materials'20148,779,848'Two terminal memcapacitor device'20148,767,438'Memelectronic device'20148,766,231'Nanoscale electronic device with barrier layers'20148,766,228'Electrically actuated device and method of controlling the formation of dopants therein'20148,737,113'Memory resistor having multi-layer electrodes'20148,711,594'Asymmetric switching rectifier'20148,710,483'Memristive junction with intrinsic rectifier'20148,710,865'Field-programmable analog array with memristors'20148,651,864'Shape memory dental retention systems'20148,586,959'Memristive switch device'20138,587,985'Memory array with graded resistance lines'20138,575,585'Memristive device'20138,570,138'Resistive switches'20138,546,785'Memristive device'20138,530,873'Electroforming free memristor and method for fabricating thereof'20138,525,146'Electrical circuit component'20138,525,553'Negative differential resistance comparator circuits'20138,519,372'Electroforming-free nanoscale switching device'20138,491,303'Oral appliance activation devices and methods'20138,487,289'Electrically actuated device'20138,455,852'Controlled placement of dopants in memristor active regions'20138,450,711'Semiconductor memristor devices'20138,437,072'Individually addressable nano-scale mechanical actuators'20138,437,172'Decoders using memristive switches'20138,415,652'Memristors with a switching layer comprising a composite of multiple phases'20138,385,101'Memory resistor having plural different active materials'20138,331,131'Changing a memristor state'20128,330,952'Guided mode resonator based Raman enhancement apparatus'20128,325,507'Memristors with an electrode metal reservoir for dopants'20128,324,976'Oscillator circuitry having negative differential resistance'20128,317,515'Shape memory dental retention systems'20128,283,649'Memristor with a non-planar substrate'20128,264,868'Memory array with metal-insulator transition switching devices'20128,259,485'Multilayer structures having memory elements with varied resistance of switching layers'20128,207,520'Programmable crosspoint device with an integral diode'20128,207,593'Memristor having a nanostructure in the switching material'20128,093,575'Memristive device with a bi-metallic electrode'20128,063,395'Memristor amorphous metal alloy electrodes'20117,985,962'Memristive device'2011

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2011–2018Patents assigned to HEWLETT PACKARD DEVELOPMENT CO (66)· patent assignee history
2011–2016Patents assigned to YANG JIANHUA (62)· patent assignee history
2011–2018Based in Palo Alto, CA, US· patent location history
2012–2015Patents assigned to WILLIAMS R STANLEY (20)· patent assignee history
2012–2015Patents assigned to RIBEIRO GILBERTO MEDEIROS (15)· patent assignee history
2012–2015Patents assigned to PICKETT MATTHEW D (12)· patent assignee history
2012–2019Based in Saratoga, CA, US· patent location history
2019–2020Based in Hadley, MA, US· patent location history
2021Based in Jiangsu, CN· patent location history
2021Based in Hangzhou, CN· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
HEWLETT PACKARD DEVELOPMENT CO662011–2018
YANG JIANHUAself622011–2016
WILLIAMS R STANLEY202012–2015
RIBEIRO GILBERTO MEDEIROS152012–2015
PICKETT MATTHEW D122012–2015
Locations
LocationPatentsSpan
Palo Alto, California, US672011–2018
Saratoga, California, US52012–2019
Hadley, Massachusetts, US32019–2020
Jiangsu, CN12021
Hangzhou, CN12021