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Inventor

Jun Etoh

Inventor
Hachioji, JP

Overview

57→
Patents
1977–2009
Patent span
Physics
Primary field (CPC G)

Patents· 57 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

G11Cprimary
G11CStatic stores44%
H10DInorganic electric semiconductor devices13%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1012%
H10BElectronic memory devices7%
G05FSystems for regulating electric or magnetic variables6%
H03KPulse technique6%
G01RMeasuring electric variables4%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests2%
F23LSupplying air or non-combustible liquids or gases to combustion apparatus in general1%
F23MCasings, linings, walls or doors specially adapted for combustion chambers, e.g. firebridges1%
PatentTitleYear
7,499,340'Semiconductor memory device and defect remedying method thereof'20097,345,929'Semiconductor memory device and defect remedying method thereof'2008RE040132'Large scale integrated circuit with sense amplifier circuits for low voltage operation'20087,203,101'Semiconductor memory device and defect remedying method thereof'20077,106,643'Method for manufacturing memory device provided with a defect recovery mechanism featuring a redundancy circuit'20067,016,236'Semiconductor memory device and defect remedying method thereof'20066,909,647'Semiconductor device having redundancy circuit'20056,898,130'Semiconductor memory device and defect remedying method thereof'20056,754,114'Semiconductor device having redundancy circuit'20046,657,901'Semiconductor device formed in a rectangle region on a semiconductor substrate including a voltage generating circuit'20036,577,544'Semiconductor device having redundancy circuit'20036,515,913'Semiconductor memory device and defect remedying method thereof'2003RE037593'Large scale integrated circuit with sense amplifier circuits for low voltage operation'20026,337,817'Semiconductor device having redundancy circuit'20026,335,884'Semiconductor memory device and defect remedying method thereof'20026,212,089'Semiconductor memory device and defect remedying method thereof'20016,160,744'Semiconductor memory device and defect remedying method thereof'20006,104,647'Semiconductor device having redundancy circuit'20006,049,500'Semiconductor memory device and defect remedying method thereof'20005,966,336'Semiconductor device having redundancy circuit'19995,955,896'Input buffer using a differential amplifier'19995,854,508'Semiconductor memory device having zigzag bonding pad arrangement'19985,815,448'Semiconductor memory having redundancy circuit'19985,677,880'Semiconductor memory having redundancy circuit'19975,617,365'Semiconductor device having redundancy circuit'19975,602,771'Semiconductor memory device and defect remedying method thereof'19975,579,256'Semiconductor memory device and defect remedying method thereof'19965,539,279'Ferroelectric memory'19965,526,313'Large scale integrated circuit with sense amplifier circuits for low voltage operation'19965,467,314'Method of testing an address multiplexed dynamic RAM'19955,455,797'Reference voltage generator'19955,426,616'Semiconductor IC device having a voltage conversion circuit which generates an internal supply voltage having value compensated for external supply voltage variations'19955,402,376'Semiconductor memory having redundancy circuit'19955,384,740'Reference voltage generator'19955,383,080'Semiconductor integrated circuit having voltage limiter circuit'19955,376,839'Large scale integrated circuit having low internal operating voltage'19945,331,596'Address multiplexed dynamic RAM having a test mode capability'19945,297,097'Large scale integrated circuit for low voltage operation'19945,265,055'Semiconductor memory having redundancy circuit'19935,262,999'Large scale integrated circuit for low voltage operation'19935,262,993'Semiconductor memory having redundancy circuit with means to switch power from a normal memory block to a spare memory block'19935,254,880'Large scale integrated circuit having low internal operating voltage'19935,179,539'Large scale integrated circuit having low internal operating voltage'19935,117,393'Method of testing memory cells in an address multiplexed dynamic RAM including test mode selection'19925,086,414'Semiconductor device having latch means'19924,994,688'Semiconductor device having a reference voltage generating circuit'19914,992,985'Method for selectively initiating/terminating a test mode in an address multiplexed DRAM and address multiplexed DRAM having such a capability'19914,965,769'Semiconductor memory capable of high-speed data erasing'19904,873,672'Dynamic random access memory capable of fast erasing of storage data'19894,811,299'Dynamic RAM device having a separate test mode capability'19894,796,234'Semiconductor memory having selectively activated blocks including CMOS sense amplifiers'19894,716,313'Pulse drive circuit'19874,635,146'Reel brake and associated tension arm control device for a reversible tape recording and/or reproducing apparatus'19874,503,522'Dynamic type semiconductor monolithic memory'19854,475,181'Semiconductor memory'19844,086,642'Protective circuit and device for metal-oxide-semiconductor field effect transistor and method for fabricating the device'19784,021,835'Semiconductor device and a method for fabricating the same'1977

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1977–2009Patents assigned to HITACHI LTD (48)· patent assignee history
1977–2009Based in Hachioji, JP· patent location history
1978Based in Hino, JP· patent location history
1987Based in Yokohama, JP· patent location history
1989–1992Patents assigned to HITACHI DEVICE ENG (2)· patent assignee history
1989–1995Based in Hachiohji, JP· patent location history
1990Based in Tokyo, JP· patent location history
1991–2009Patents assigned to HITACHI VLSI ENG (17)· patent assignee history
2002–2008Patents assigned to HITACHI ULSI SYS CO LTD (4)· patent assignee history
2004–2006Patents assigned to RENESAS TECH CORP (3)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
HITACHI LTD481977–2009
HITACHI VLSI ENG171991–2009
HITACHI ULSI SYS CO LTD42002–2008
RENESAS TECH CORP32004–2006
HITACHI DEVICE ENG21989–1992
Locations
LocationPatentsSpan
Hachioji, JP491977–2009
Hachiohji, JP51989–1995
Tokyo, JP11990
Yokohama, JP11987
Hino, JP11978